IRFB13N50A, SiHFB13N50A
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
81
20
36
Single
D
FEATURES
500
0.450
• Lower Gate Charge Q
g
Results in Simpler Drive
Reqirements
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
• Lead (Pb)-free Available
TO-220
APPLICATIONS
G
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supplies
S
G
D
S
N-Channel
MOSFET
• High Speed Power Switching
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFB13N50APbF
SiHFB13N50A-E3
IRFB13N50A
SiHFB13N50A
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
14
9.1
56
2.0
560
14
25
250
9.2
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 5.7 mH, R
G
= 25
Ω,
I
AS
=14 A, dV/dt = 7.6 V/ns (see fig. 12a).
c. I
SD
≤
14 A, dI/dt
≤
250 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
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1
IRFB13N50A, SiHFB13N50A
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greasd Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
0.50
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Current
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
T
J
= 25 °C, I
F
= 14 A,
T
J
= 125 °C, dI/dt = 100 A/µs
b
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 8.4 A
b
500
-
2.0
-
-
-
-
8.1
-
0.55
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.450
-
V
V/°C
V
nA
µA
Ω
S
V
DS
= 50 V, I
D
= 8.4 A
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V
V
DS
= 400 V, f = 1.0 MHz
V
DS
= 0 V to 400 V
c
I
D
= 14 A, V
DS
= 400 V,
see fig. 6 and 13
b
V
GS
= 10 V
V
DD
= 250 V, I
D
= 14 A,
R
G
= 7.5
Ω,
see fig. 10
b
-
-
-
-
-
-
-
-
-
-
-
-
-
1910
290
11
2730
82
160
-
-
-
15
39
39
31
-
-
-
-
-
-
81
20
36
-
-
-
-
ns
nC
pF
-
-
-
-
-
-
-
-
-
370
4.4
21
14
A
56
1.5
550
6.5
31
V
ns
µC
A
G
S
T
J
= 25 °C, I
S
= 14 A, V
GS
= 0 V
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
2
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IRFB13N50A, SiHFB13N50A
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
BOTTOM
T
J
= 150 °C
ID, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
10
1
4.5V
T
J
= 25 °C
1
0.1
20μs PULSE WIDTH
T
J
= 25 °C
0.01
0.1
1
10
100
V
DS
= 50
20μs PULSE WIDTH
0.1
4
6
8
10
12
14
16
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
100
TOP
I
D
, Drain-to-Source Current (A)
BOTTOM
10
R
DS(on)
, Drain-to-Source On Resistance
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
3.0
I
D
= 14A
2.5
2.0
4.5V
(Normalized)
1.5
1
1.0
0.5
0.1
0.1
1
20μs PULSE WIDTH
T
J
= 150 °C
10
100
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
V
DS
, Drain-to-Source Voltage (V)
T
J,
Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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3
IRFB13N50A, SiHFB13N50A
100000
10000
V
GS
= 0V,
f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
100
C, Capacitance (pF)
Ciss
1000
I
SD
, Reverse Drain Current (A)
T
J
= 150 °C
10
Coss
100
T
J
= 25 °C
1
10
Crss
1
1
10
100
1000
0.1
0.2
0.5
0.8
V
GS
= 0 V
1.1
1.4
V
DS
, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
12
1000
I
D
= 14A
V
DS
= 400V
V
DS
= 250V
V
DS
= 100 V
10
I
D
, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
100
V
GS
, Gate-to-Source Voltage (V)
7
10
100μsec
1msec
5
1
Tc = 25°C
Tj = 150°C
Single Pulse
10
100
10msec
2
0
0
12
24
36
48
60
0.1
O
G
, Total Gate Charge (nC)
1000
10000
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
4
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IRFB13N50A, SiHFB13N50A
15
V
DS
V
GS
R
D
D.U.T.
+
-
V
DD
12
R
G
10
V
I
D
, Drain Current (A)
9
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
Fig. 10a - Switching Time Test Circuit
6
V
DS
3
90
%
0
25
50
75
100
125
150
T
C
, Case Temperature (°C)
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
Fig. 10b - Switching Time Waveforms
D = 0.50
Thermal Response (Z
thJC
)
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.001
0.00001
0.001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15
V
V
DS
t
p
V
DS
L
Driver
R
G
20
V
t
p
D.U.T.
I
AS
0.01
Ω
+
A
-
V
DD
I
AS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
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