IRF630, SiHF630
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
43
7.0
23
Single
D
FEATURES
200
0.40
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
G
G
D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRF630PbF
SiHF630-E3
IRF630
SiHF630
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche
Repetitive Avalanche
Peak Diode Recovery
Energy
b
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
Repetitive Avalanche Current
a
Energy
a
dV/dt
c
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
200
± 20
9.0
5.7
36
0.59
250
9.0
7.4
74
5.0
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 4.6 mH, R
g
= 25
,
I
AS
= 9.0 A (see fig. 12).
c. I
SD
9.0 A, dI/dt
120 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
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IRF630, SiHF630
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
1.7
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 5.4 A
b
V
DS
= 50 V, I
D
= 5.4 A
200
-
2.0
-
-
-
-
3.8
-
0.24
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.40
-
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
800
240
76
-
-
-
9.4
28
39
20
4.5
7.5
-
-
-
43
7.0
23
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= 10 V
I
D
= 5.9 A, V
DS
= 160 V,
see fig. 6 and 13
b
-
-
-
V
DD
= 100 V, I
D
= 5.9 A,
R
g
= 12
,
R
D
= 16
,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
170
1.1
9.0
A
36
2.0
340
2.2
V
ns
nC
G
S
T
J
= 25 °C, I
S
= 9.0 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 5.9 A, dI/dt = 100 A/s
-
-
-
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
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IRF630, SiHF630
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
I
D
, Drain Current (A)
10
1
I
D
, Drain Current (A)
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
10
1
150
°
C
10
0
25
°
C
10
0
4.5 V
20 µs Pulse Width
T
C
=
25 °C
10
0
10
1
10
-1
4
91031_03
20 µs Pulse Width
V
DS
=
50 V
5
6
7
8
9
10
10
-1
10
-1
91031_01
V
DS
, Drain-to-Source Voltage (V)
V
GS,
Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain Current (A)
10
1
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
3.0
2.5
2.0
1.5
1.0
0.5
I
D
= 5.9 A
V
GS
= 10 V
4.5 V
10
0
10
-1
10
-1
91031_02
20 µs Pulse Width
T
C
=
150 °C
10
0
10
1
V
DS,
Drain-to-Source Voltage (V)
91031_04
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
T
J,
Junction Temperature (°C)
Fig. 2 -Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRF630, SiHF630
1600
I
SD
, Reverse Drain Current (A)
Capacitance (pF)
1200
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
10
1
150
°
C
800
C
oss
400
C
rss
0
10
0
10
1
25
°
C
10
0
V
GS
= 0 V
0.5
91031_07
0.7
0.9
1.1
1.3
1.5
91031_05
V
DS,
Drain-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
V
GS
, Gate-to-Source Voltage (V)
I
D
= 5.9 A
V
DS
= 160 V
10
3
5
2
Operation in this area limited
by R
DS(on)
16
I
D
, Drain Current (A)
V
DS
= 100 V
12
V
DS
= 40 V
10
2
5
2
10
µs
100
µs
1
ms
10
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
0.1
2
5
10
5
2
8
4
For test circuit
see figure 13
1
5
2
0
0
91031_06
10
20
30
40
50
91031_08
0.1
1
2
5
10
2
5
10
2
2
5
10
3
2
5
10
4
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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IRF630, SiHF630
V
DS
10
V
GS
R
D
D.U.T.
+
-
V
DD
I
D
, Drain Current (A)
8
R
G
6
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
4
Fig. 10a - Switching Time Test Circuit
2
V
DS
0
25
50
75
100
125
150
90 %
91031_09
T
C
, Case Temperature (°C)
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
0
−
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-2
0.1
1
10
0.1
10
-2
10
-5
91031_11
10
-4
10
-3
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary t
p
to obtain
required I
AS
R
G
V
DS
V
DS
t
p
V
DD
D.U.T.
I
AS
+
-
V
DD
A
V
DS
10 V
t
p
0.01
Ω
I
AS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
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