INTEGRATED CIRCUITS
74F133
13-input NAND gate
Product specification
Supersedes data of 1989 Oct 16
IC15 Data Handbook
1993 Jul 02
Philips
Semiconductors
Philips Semiconductors
Product specification
13-input NAND gate
74F133
FEATURE
•
Industrial temperature range available (–40°C to +85°C)
TYPE
TYPICAL
PROPAGATION
DELAY
4.0ns
TYPICAL
SUPPLY CURRENT
(TOTAL)
2.0mA
PIN CONFIGURATION
D0
D1
D2
D3
D4
D5
D6
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
CC
D12
D11
D10
D9
D8
D7
Q
74F133
SF00099
ORDERING INFORMATION
DESCRIPTION
16-pin plastic DIP
16-pin plastic SO
COMMERCIAL RANGE
V
CC
= 5V
±10%,
T
amb
= 0°C to +70°C
N74F133N
N74F133D
INDUSTRIAL RANGE
V
CC
= 5V
±10%,
T
amb
= –40°C to +85°C
I74F133N
I74F133D
PKG DWG #
SOT38-4
SOT109-1
INPUT AND OUTPUT LOADING AND FAN-OUT TABLE
PINS
D0–D12
Q
Data inputs
Data output
DESCRIPTION
74F (U.L.) HIGH/LOW
1.0/1.0
50/33
LOAD VALUE HIGH/LOW
20µA/0.6mA
1.0mA/20mA
NOTE:
One (1.0) FAST unit load is defined as: 20µA in the High state and 0.6mA in the Low state.
LOGIC SYMBOL
1
2
3
4
5
6
7
10
11
12
13
14
15
V
CC
= Pin 16
GND = Pin 8
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
Q
9
IEC/IEEE SYMBOL
1
2
3
4
5
6
7
10
11
12
13
14
15
9
&
SF00100
SF00101
July 2, 1993
2
853–1154 10219
Philips Semiconductors
Product specification
13-input NAND gate
74F133
LOGIC DIAGRAM
D0
1
D1
2
D2
3
D3
4
D4
5
D5
6
D6
7
D7
10
D8
11
D9 D10
12
13
D11
14
D12
15
9
V
CC
= Pin 16
GND = Pin 8
Q
SF00102
FUNCTION TABLE
INPUTS
D0
H
D1
H
D2
H
D3
H
D4
H
D5
H
D6
H
D7
H
D8
H
D9
H
D10
H
D11
H
D12
H
OUTPUT
Q
L
H
Any one input = L
NOTES:
H = High voltage level
L = Low voltage level
ABSOLUTE MAXIMUM RATINGS
(Operation beyond the limits set forth in this table may impair the useful life of the device.
Unless otherwise noted these limits are over the operating free-air temperature range.)
SYMBOL
V
CC
V
IN
I
IN
V
OUT
I
OUT
T
amb
T
stg
Supply voltage
Input voltage
Input current
Voltage applied to output in High output state
Current applied to output in Low output state
Commercial range
Operating free-air temperature range
free air
Storage temperature range
Industrial range
PARAMETER
RATING
–0.5 to +7.0
–0.5 to +7.0
–30 to +5
–0.5 to V
CC
40
0 to +70
–40 to +85
–65 to +150
UNIT
V
V
mA
V
mA
°C
°C
°C
RECOMMENDED OPERATING CONDITIONS
LIMITS
SYMBOL
V
CC
V
IH
V
IL
I
IK
I
OH
I
OL
T
amb
Supply voltage
High-level input voltage
Low-level input voltage
Input clamp current
High-level output current
Low-level output current
Commercial range
Operating free-air temperature range
free air
Industrial range
0
–40
PARAMETER
MIN
4.5
2.0
0.8
–18
–1
20
+70
+85
NOM
5.0
MAX
5.5
UNIT
V
V
V
mA
mA
mA
°C
°C
July 2, 1993
3
Philips Semiconductors
Product specification
13-input NAND gate
74F133
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.)
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
NO TAG
V
CC
= MIN, V
IL
= MAX
V
IH
= MIN, I
OH
= MAX
Low-level
Low level output voltage
Input clamp voltage
Input current at maximum input voltage
High-level input current
Low-level input current
Short-circuit output current
NO TAG
Supply current (total)
I
CCH
I
CCL
V
CC
= MIN, V
IL
= MAX
V
IH
= MIN, I
OL
= MAX
V
CC
= MIN, I
I
= I
IK
V
CC
= MAX, V
I
= 7.0V
V
CC
= MAX, V
I
= 2.7V
V
CC
= MAX, V
I
= 0.5V
V
CC
= MAX
V
CC
= MAX
–60
1.0
2.5
±10%V
CC
±5%V
CC
±10%V
CC
±5%V
CC
MIN
2.5
2.7
3.4
0.35
0.35
–0.73
0.50
0.50
–1.2
100
20
–0.6
–150
2.0
4.0
V
µA
µA
mA
mA
mA
V
TYP
NO TAG
MAX
UNIT
V
O
OH
High-level
High level output voltage
V
V
O
OL
V
IK
I
I
I
IH
I
IL
I
OS
I
CC
NOTES:
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.
2. All typical values are at V
CC
= 5V, T
amb
= 25°C.
3. Not more than one output should be shorted at a time. For testing I
OS
, the use of high-speed test apparatus and/or sample-and-hold
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting
of a High output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any
sequence of parameter tests, I
OS
tests should be performed last.
AC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST
CONDITION
V
CC
= +5.0V
T
amb
= +25°C
C
L
= 50pF, R
L
= 500Ω
MIN
t
PLH
t
PHL
Propagation delay
Dn to Q
Waveform
NO TAG
2.0
2.5
TYP
4.0
4.5
MAX
7.0
7.5
V
CC
= +5.0V
±
10%
T
amb
= 0°C to +70°C
C
L
= 50pF, R
L
= 500Ω
MIN
1.5
2.0
MAX
7.5
8.0
V
CC
= +5.0V
±
10%
T
amb
= –40°C to +85°C
C
L
= 50pF, R
L
= 500Ω
MIN
1.5
2.0
MAX
7.5
8.0
ns
UNIT
AC WAVEFORMS
Dn
V
M
t
PHL
V
M
t
PLH
Q
V
M
V
M
SF00098
Waveform 1. Propagation Delay for Data to Outputs
NOTE:
For all waveforms, V
M
= 1.5V.
July 2, 1993
4
Philips Semiconductors
Product specification
13-input NAND gate
74F133
TEST CIRCUIT AND WAVEFORMS
V
CC
NEGATIVE
PULSE
V
IN
PULSE
GENERATOR
R
T
D.U.T.
V
OUT
90%
V
M
10%
t
THL (
t
f
)
C
L
R
L
t
w
V
M
10%
t
TLH (
t
r
)
0V
90%
AMP (V)
t
TLH (
t
r
)
90%
POSITIVE
PULSE
V
M
10%
t
w
t
THL (
t
f
)
AMP (V)
90%
V
M
10%
0V
Test Circuit for Totem-Pole Outputs
DEFINITIONS:
R
L
= Load resistor;
see AC ELECTRICAL CHARACTERISTICS for value.
C
L
= Load capacitance includes jig and probe capacitance;
see AC ELECTRICAL CHARACTERISTICS for value.
R
T
= Termination resistance should be equal to Z
OUT
of
pulse generators.
Input Pulse Definition
INPUT PULSE REQUIREMENTS
family
amplitude V
M
74F
3.0V
1.5V
rep. rate
1MHz
t
w
500ns
t
TLH
2.5ns
t
THL
2.5ns
SF00006
July 2, 1993
5
嵌入式系统
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