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5962F9683101VPA

产品描述BUFFER AMPLIFIER, CDIP8, CERDIP-8
产品类别模拟混合信号IC    放大器电路   
文件大小106KB,共9页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
下载文档 详细参数 选型对比 全文预览

5962F9683101VPA概述

BUFFER AMPLIFIER, CDIP8, CERDIP-8

5962F9683101VPA规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Renesas(瑞萨电子)
零件包装代码DIP
包装说明DIP, DIP8,.3
针数8
Reach Compliance Codenot_compliant
ECCN代码EAR99
放大器类型BUFFER
标称带宽 (3dB)340 MHz
25C 时的最大偏置电流 (IIB)25 µA
最大输入失调电压20000 µV
JESD-30 代码R-GDIP-T8
JESD-609代码e0
标称负供电电压 (Vsup)-5 V
功能数量1
端子数量8
最高工作温度125 °C
最低工作温度-55 °C
封装主体材料CERAMIC, GLASS-SEALED
封装代码DIP
封装等效代码DIP8,.3
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
电源+-5 V
认证状态Not Qualified
筛选级别38535V;38534K;883S
座面最大高度5.08 mm
标称压摆率1155 V/us
标称供电电压 (Vsup)5 V
表面贴装NO
技术BIPOLAR
温度等级MILITARY
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
总剂量300k Rad(Si) V
宽度7.62 mm

文档预览

下载PDF文档
HS-1212RH
Data Sheet
August 1999
File Number
4228.1
Radiation Hardened, Dual, High Speed
Low Power, Video Closed Loop Buffer
The HS-1212RH is a dual closed loop buffer featuring user
programmable gain and high speed performance.
Manufactured on Intersil’s proprietary complementary
bipolar UHF-1 (DI bonded wafer) process, this device offers
wide -3dB bandwidth of 340MHz, very fast slew rate,
excellent gain flatness and high output current. These
devices are QML approved and are processed and screened
in full compliance with MIL-PRF-38535.
A unique feature of the pinout allows the user to select a
voltage gain of +1, -1, or +2, without the use of any external
components. Gain selection is accomplished via
connections to the inputs, as described in the “Application
Information” section. The result is a more flexible product,
fewer part types in inventory, and more efficient use of board
space.
Compatibility with existing op amp pinouts provides flexibility
to upgrade low gain amplifiers, while decreasing component
count. Unlike most buffers, the standard pinout provides an
upgrade path should a higher closed loop gain be needed at
a future date.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-96831. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Features
• Electrically Screened to SMD # 5962-96831
• QML Qualified per MIL-PRF-38535 Requirements
• MIL-PRF-38535 Class V Compliant
• User Programmable For Closed-Loop Gains of +1, -1 or
+2 Without Use of External Resistors
• Standard Operational Amplifier Pinout
• Low Supply Current . . . . . . . . . . . . 5.9mA/Op Amp (Typ)
• Excellent Gain Accuracy . . . . . . . . . . . . . . . 0.99V/V (Typ)
• Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . .340MHz (Typ)
• Fast Slew Rate . . . . . . . . . . . . . . . . . . . . . .1155V/µs (Typ)
• High Input Impedance . . . . . . . . . . . . . . . . . . . 1MΩ (Typ)
• Excellent Gain Flatness (to 50MHz). . . . . .
±0.02dB
(Typ)
• Fast Overdrive Recovery . . . . . . . . . . . . . . . . <10ns (Typ)
• Total Gamma Dose. . . . . . . . . . . . . . . . . . . . 300kRAD(Si)
• Latch Up . . . . . . . . . . . . . . . . . . . . . None (DI Technology)
Applications
• Flash A/D Driver
• Video Switching and Routing
• Pulse and Video Amplifiers
• Wideband Amplifiers
• RF/IF Signal Processing
• Imaging Systems
Ordering Information
ORDERING NUMBER
5962F9683101VPA
5962F9683101VPC
INTERNAL
MKT. NUMBER
HS7-1212RH-Q
HS7B-1212RH-Q
TEMP. RANGE
(
o
C)
-55 to 125
-55 to 125
Pinout
HS-1212RH (CERDIP) GDIP1-T8
OR
HS-1212RH (SBDIP) CDIP2-T8
TOP VIEW
OUT1
-IN1
+IN1
V-
1
-+
2
3
4
+-
8
7
6
5
V+
OUT2
-IN2
+IN2
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

5962F9683101VPA相似产品对比

5962F9683101VPA 5962F9683101VPC HS7B-1212RH-Q
描述 BUFFER AMPLIFIER, CDIP8, CERDIP-8 BUFFER AMPLIFIER, CDIP8, CERDIP-8 BUFFER AMPLIFIER, CDIP8, SIDE BRAZED, CERAMIC, DIP-8
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子)
零件包装代码 DIP DIP DIP
包装说明 DIP, DIP8,.3 DIP, DIP8,.3 DIP,
针数 8 8 8
Reach Compliance Code not_compliant not_compliant unknown
ECCN代码 EAR99 EAR99 EAR99
放大器类型 BUFFER BUFFER BUFFER
标称带宽 (3dB) 340 MHz 340 MHz 340 MHz
JESD-30 代码 R-GDIP-T8 R-CDIP-T8 R-CDIP-T8
标称负供电电压 (Vsup) -5 V -5 V -5 V
功能数量 1 1 1
端子数量 8 8 8
最高工作温度 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C
封装主体材料 CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装代码 DIP DIP DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 5.08 mm 5.08 mm 5.08 mm
标称压摆率 1155 V/us 1155 V/us 1155 V/us
标称供电电压 (Vsup) 5 V 5 V 5 V
表面贴装 NO NO NO
技术 BIPOLAR BIPOLAR BIPOLAR
温度等级 MILITARY MILITARY MILITARY
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子节距 2.54 mm 2.54 mm 2.54 mm
端子位置 DUAL DUAL DUAL
宽度 7.62 mm 7.62 mm 7.62 mm
是否Rohs认证 不符合 不符合 -
25C 时的最大偏置电流 (IIB) 25 µA 25 µA -
最大输入失调电压 20000 µV 20000 µV -
JESD-609代码 e0 e0 -
封装等效代码 DIP8,.3 DIP8,.3 -
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED -
电源 +-5 V +-5 V -
筛选级别 38535V;38534K;883S 38535V;38534K;883S -
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED -
总剂量 300k Rad(Si) V 300k Rad(Si) V -

 
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