2N2944AUB – 2N2946AUB
PNP Silicon Small Signal Transistor
Available on
commercial
versions
Qualified per MIL-PRF-19500/382
DESCRIPTION
Qualified Levels:
JAN, JANTX, and
JANTXV
This 2N2944AUB through 2N2946AUB PNP silicon transistor device is military qualified up to
a JANTXV level for high-reliability applications. Microsemi also offers numerous other
products to meet higher and lower power voltage regulation applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
Surface mount equivalent of JEDEC registered 2N2944A thru 2N2946A series.
Low-profile ceramic surface mount package.
JAN, JANTX, and JANTXV qualification per MIL-PRF-19500/382 available.
RoHS compliant versions available (commercial grade only).
UB Package
APPLICATIONS / BENEFITS
•
•
Small lightweight package.
ESD to Class 3 per MIL-STD-750, method 1020.
Also available in:
TO-46 (TO-206AB)
(axial leaded)
2N2944A – 2N2946A
MAXIMUM RATINGS
@ +25 C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
(2)
Thermal Resistance Junction-to-Ambient
Thermal Resistance surface mount Junction to Solder
Point
Collector Current (dc)
Emitter to Base voltage (static),
2N2944AUB
collector open
2N2945AUB
2N2946AUB
Collector to Base voltage (static),
2N2944AUB
emitter open
2N2945AUB
2N2946AUB
Collector to Emitter voltage (static),
2N2944AUB
base open
2N2945AUB
2N2946AUB
Emitter to Collector voltage
2N2944AUB
2N2945AUB
2N2946AUB
o
Total Power Dissipation, all terminals @ T
A
= +25 C
(1)
o
Symbol
T
J
and T
STG
R
ӨJA
R
ӨJSP
I
C
V
EBO
Value
-65 to +200
435
90
-100
-15
-25
-40
-15
-25
-40
-10
-20
-35
-10
-20
-35
400
800
Unit
C
C/W
o
C/W
o
o
mA
V
V
CBO
V
V
CEO
V
V
ECO
V
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
P
T
P
T
mW
mW
Total Power Dissipation, all terminals @ T
SP
= +25 C
o
Notes:
1. Derate linearly 2.30 mW /
o
C above T
A
= +25
o
C.
2. T
A
= +55°C for UB on printed circuit board (PCB), PCB = FR4 .0625 inch (1.59 mm) 1 - layer 1 Oz Cu,
horizontal, still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.22 mm), R
θJA
with a defined thermal
resistance condition included is measured at P
T
= 400
mW
.
T4-LDS-0236-1, Rev. 1 (111960)
©2011 Microsemi Corporation
Page 1 of 5
2N2944AUB – 2N2946AUB
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Ceramic.
TERMINALS: Gold plating over nickel under-plate. RoHS compliant matte/tin available on commercial grade only.
MARKING: Part number, date code, manufacturer’s ID.
TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities.
WEIGHT: < 0.04 Grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N2944A
UB
(e3)
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
Surface Mount package
Symbol
I
B
I
E
V
CB
V
EB
V
(BR)
SYMBOLS & DEFINITIONS
Definition
Base current (dc).
Emitter current (dc).
Collector to base voltage (dc).
Emitter to base voltage (dc).
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
T4-LDS-0236-1, Rev. 1 (111960)
©2011 Microsemi Corporation
Page 2 of 5
2N2944AUB – 2N2946AUB
ELECTRICAL CHARACTERISTICS
@ 25 C unless otherwise noted.
Characteristic
Symbol
Min.
Max.
Unit
o
OFF CHARACTERISTICS:
Collector-Emitter Breakdown Voltage
I
C
= -10
µA
2N2944AUB
2N2945AUB
2N2946AUB
2N2944AUB
2N2945AUB
2N2946AUB
2N2944AUB
2N2945AUB
2N2946AUB
2N2944AUB
2N2945AUB
2N2946AUB
2N2944AUB
2N2945AUB
2N2946AUB
V(BR)CEO
-10
-20
-35
-10
-20
-35
10
10
10
-0.1
-0.2
-0.5
V
Emitter-Collector Breakdown Voltage
I
E
= -10
µA,
I
B
= 0
V(BR)ECO
V
Collector-Base Cutoff Current
V
CB
= -15 V
V
CB
= -25 V
V
CB
= -40 V
Emitter-Base Cutoff Current
V
EB
= -12 V
V
EB
= -20 V
V
EB
= -32 V
I
CBO
µA
I
EBO
ηA
ON CHARACTERISTICS:
(1)
Forward-Current Transfer Ratio
I
C
= -1.0 mA, V
CE
= -0.5 V
hFE
100
70
50
50
30
20
-0.3
-0.5
-0.8
-0.6
-1.0
-2.0
-1.0
-1.6
-2.5
mV
Forward-Current Transfer Ratio (inverted connection)
2N2944AUB
I
E
= -200
µA,
V
EC
= -0.5 V
2N2945AUB
2N2946AUB
Emitter-Collector Offset Voltage
I
B
= -200
µA,
I
E
= 0
2N2944AUB
2N2945AUB
2N2946AUB
2N2944AUB
I
B
= -1.0 mA, I
E
= 0
2N2945AUB
2N2946AUB
2N2944AUB
I
B
= -2.0 mA, I
E
= 0
2N2945AUB
2N2946AUB
hFE(inv)
VEC(ofs)
DYNAMIC CHARACTERISTICS:
Emitter-Collector On-State Resistance
I
B
= -100
µA
,
I
E
= 0, I
e
= 100
µA
ac
(
rms)
f = 1.0 kHz
I
B
= -1.0 mA, I
E
= 0, I
e
= 100
µA
ac (rms)
f =1.0 kHz
Magnitude of Small-Signal Forward
Current Transfer Ratio
I
C
= -1.0 mA, V
CE
= -6.0V, f = 1.0 MHz
Output Capacitance
V
CB
= -6.0 V, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
V
EB
= -6.0 V, I
C
= 0, 100 kHz ≤ f ≤ 1.0 MHz
(1) Pulse Test: Pulse Width = 300 s, duty cycle 2.0%.
2N2944AUB
2N2945AUB
2N2946AUB
2N2944AUB
2N2945AUB
2N2946AUB
2N2944AUB
2N2945AUB
2N2946AUB
rec(on)
10
12
14
4.0
6.0
8.0
15
10
5.0
55
55
55
10
6.0
Ω
|hfe|
Cobo
Cibo
pF
pF
T4-LDS-0236-1, Rev. 1 (111960)
©2011 Microsemi Corporation
Page 3 of 5
2N2944AUB – 2N2946AUB
GRAPHS
Maximum DC Operation Rating (mW )
T
A
( C) Ambient Temperature
FIGURE 1 –
Temperature-Power Derating Curve (R
ӨJA
)
o
Maximum DC Operation Rating (mW )
T
SP
( C) Solder Pad Temperature
FIGURE 2 –
Temperature-Power Derating Curve (R
ӨJSP
)
o
T4-LDS-0236-1, Rev. 1 (111960)
©2011 Microsemi Corporation
Page 4 of 5
2N2944AUB – 2N2946AUB
PACKAGE DIMENSIONS
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Min
.046
.115
.085
inch
.022
.017
Dimensions
millimeters
Max
Min
Max
.056
1.17
1.42
.128
2.92
3.25
.108
2.16
2.74
.128
3.25
.108
2.74
.038
0.56
0.97
.035
0.43
0.89
Note
Symbol
LS1
LS2
LW
r
r1
r2
Min
.035
.071
0.16
inch
Dimensions
millimeters
Max
Min
Max
.039
0.89
0.99
.079
1.80
2.01
0.24
0.41
0.61
.008
0.20
.012
0.31
.022
.056
Note
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0236-1, Rev. 1 (111960)
©2011 Microsemi Corporation
Page 5 of 5
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