Synchronous DRAM Module, 32MX64, CMOS, DIMM-168
| 参数名称 | 属性值 |
| 厂商名称 | Microsemi |
| 零件包装代码 | DIMM |
| 包装说明 | DIMM, |
| 针数 | 168 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST |
| 其他特性 | AUTO/SELF REFRESH |
| JESD-30 代码 | R-XDMA-N168 |
| 内存密度 | 2147483648 bit |
| 内存集成电路类型 | SYNCHRONOUS DRAM MODULE |
| 内存宽度 | 64 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 168 |
| 字数 | 33554432 words |
| 字数代码 | 32000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 32MX64 |
| 封装主体材料 | UNSPECIFIED |
| 封装代码 | DIMM |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 认证状态 | Not Qualified |
| 自我刷新 | YES |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子形式 | NO LEAD |
| 端子位置 | DUAL |
| WED3DG6332V10D2 | WED3DG6332V7D2 | W3DG6432V10D2 | W3DG6432V7D2 | W3DG6432V75D2 | WED3DG6332V75D2 | |
|---|---|---|---|---|---|---|
| 描述 | Synchronous DRAM Module, 32MX64, CMOS, DIMM-168 | Synchronous DRAM Module, 32MX64, CMOS, DIMM-168 | Synchronous DRAM Module, 32MX64, CMOS, DIMM-168 | Synchronous DRAM Module, 32MX64, CMOS, DIMM-168 | Synchronous DRAM Module, 32MX64, CMOS, DIMM-168 | Synchronous DRAM Module, 32MX64, CMOS, DIMM-168 |
| 零件包装代码 | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
| 包装说明 | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, |
| 针数 | 168 | 168 | 168 | 168 | 168 | 168 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 代码 | R-XDMA-N168 | R-XDMA-N168 | R-XDMA-N168 | R-XDMA-N168 | R-XDMA-N168 | R-XDMA-N168 |
| 内存密度 | 2147483648 bit | 2147483648 bit | 2147483648 bit | 2147483648 bit | 2147483648 bit | 2147483648 bit |
| 内存集成电路类型 | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE |
| 内存宽度 | 64 | 64 | 64 | 64 | 64 | 64 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 168 | 168 | 168 | 168 | 168 | 168 |
| 字数 | 33554432 words | 33554432 words | 33554432 words | 33554432 words | 33554432 words | 33554432 words |
| 字数代码 | 32000000 | 32000000 | 32000000 | 32000000 | 32000000 | 32000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 32MX64 | 32MX64 | 32MX64 | 32MX64 | 32MX64 | 32MX64 |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装代码 | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 自我刷新 | YES | YES | YES | YES | YES | YES |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 厂商名称 | Microsemi | - | - | Microsemi | Microsemi | Microsemi |
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