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SMBJ8.0CD-M3/I

产品描述Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMBJ, 2 PIN
产品类别分立半导体    二极管   
文件大小93KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 选型对比 全文预览

SMBJ8.0CD-M3/I概述

Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMBJ, 2 PIN

SMBJ8.0CD-M3/I规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Vishay(威世)
包装说明R-PDSO-C2
Reach Compliance Codeunknown
ECCN代码EAR99
Factory Lead Time12 weeks
其他特性EXCELLENT CLAMPING CAPABILITY
最大击穿电压9.69 V
最小击穿电压9.03 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散600 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性BIDIRECTIONAL
最大功率耗散1 W
最大重复峰值反向电压8 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间30

SMBJ8.0CD-M3/I文档预览

SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• ± 3.5 %: very tight V
BR
tolerance
• Low leakage current
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
DO-214AA (SMBJ)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
PRIMARY CHARACTERISTICS
V
BR
(uni-directional)
V
BR
(bi-directional)
V
WM
(uni-directional)
V
WM
(bi-directional)
P
PPM
P
D
at T
M
= 50 °C
P
D
at T
A
= 25 °C
T
J
max.
Polarity
Package
6.5 V to 228 V
6.5 V to 145 V
5.0 V to 188 V
5.0 V to 120 V
600 W
5.0 W
1.0 W
150 °C
Uni-directional, bi-directional
DO-214AA (SMBJ)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFETs, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
industrial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
DEVICES FOR BI-DIRECTIONAL APPLICATIONS
For bi-directional devices use CD suffix (e.g. SMBJ5.0CD).
Electrical characteristics apply in both directions.
Polarity:
for uni-directional types the band denotes cathode
end, no cathode band on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
Peak pulse current
Power dissipation
with a 10/1000 μs waveform
with a 10/1000 μs waveform
T
M
= 50 °C
T
A
= 25 °C
SYMBOL
P
PPM (1)
I
PPM (1)
P
D (2)
P
D (3)
T
J
, T
STG
VALUE
600
See next table
5.0
1.0
-55 to +150
UNIT
W
A
W
°C
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Power dissipation mounted on infinite heatsink
(3)
Power dissipation mounted on minimum recommended pad layout
Revision: 10-Sep-15
Document Number: 87606
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
www.vishay.com
Vishay General Semiconductor
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
MAX.
6.50
6.97
6.77
7.27
7.33
7.87
7.90
8.48
8.46
9.08
9.03
9.69
9.57
10.3
10.2
10.9
11.3
12.1
12.4
13.3
13.5
14.5
14.6
15.7
15.8
17.0
17.0
18.2
18.1
19.4
19.2
20.6
20.3
21.8
22.5
24.2
24.8
26.6
27.1
29.1
29.3
31.5
31.6
33.9
33.8
36.3
37.3
40.0
40.6
43.6
45.1
48.4
48.5
52.1
50.8
54.5
54.1
58.1
57.6
61.8
60.9
65.4
65.4
70.2
67.7
72.7
72.2
77.5
79.0
84.8
84.6
90.8
88.1
94.4
95.7
103
102
109
113
121
124
133
135
145
146
157
170
182
181
194
192
206
212
228
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
DEVICE
MARKING
CODE
UNI
6AA
6AB
6AC
6AD
6AE
6AF
6AG
6AH
6AK
6AL
6AM
6AN
6AP
6AQ
6AR
6AS
6AT
6AU
6AV
6AW
6AX
6AY
6AZ
6BA
6BB
6BC
6BD
6BE
6BF
6BG
6BH
6BK
6BL
6BM
6BN
6BP
6BQ
6BR
6BS
6BT
6BU
6BV
6BW
6BX
6BY
6BZ
6CA
BI
6AA
6AB
6AC
6AD
6AE
6AF
6AG
6AH
6AK
6AL
6AM
6AN
6AP
6AQ
6AR
6AS
6AT
6AU
6AV
6AW
6AX
6AY
6AZ
6BA
6BB
6BC
6BD
6BE
6BF
6BG
6BH
6BK
6BL
6BM
6BN
6BP
6BQ
6BR
6BS
6BT
6BU
6BV
-
-
-
-
-
TEST
CURRENT
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
188
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
(2)
500
500
300
150
75
35
15
5.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(3)
65.9
58.9
54.5
50.8
47.2
44.8
42.2
39.7
35.9
33.5
30.6
28.3
26.2
25.0
23.4
22.1
20.8
18.8
17.1
15.6
14.5
13.4
12.6
11.5
10.5
9.43
8.76
8.40
7.90
7.40
7.00
6.50
6.28
5.88
5.40
5.06
4.86
4.46
4.17
3.77
3.45
3.15
2.94
2.53
2.34
2.23
2.03
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
9.1
10.2
11.0
11.8
12.7
13.4
14.3
15.1
16.7
17.9
19.6
21.2
22.9
24.0
25.6
27.2
28.8
32.0
35.1
38.4
41.6
44.7
47.7
52.5
57.3
63.6
68.5
71.6
76.3
81.2
85.9
92.3
95.5
102
111
119
124
135
144
159
174
190
206
239
256
270
301
(+)SMBJ5.0D
(+)SMBJ6.0D
(+)SMBJ6.5D
(+)SMBJ7.0D
(+)SMBJ7.5D
(+)SMBJ8.0D
(+)SMBJ8.5D
(+)SMBJ9.0D
(+)SMBJ10D
(+)SMBJ11D
(+)SMBJ12D
(+)SMBJ13D
(+)SMBJ14D
(+)SMBJ15D
(+)SMBJ16D
(+)SMBJ17D
(+)SMBJ18D
(+)SMBJ20D
(+)SMBJ22D
(+)SMBJ24D
(+)SMBJ26D
(+)SMBJ28D
(+)SMBJ30D
(+)SMBJ33D
(+)SMBJ36D
(+)SMBJ40D
(+)SMBJ43D
(+)SMBJ45D
(+)SMBJ48D
(+)SMBJ51D
(+)SMBJ54D
(+)SMBJ58D
(+)SMBJ60D
(+)SMBJ64D
(+)SMBJ70D
(+)SMBJ75D
(+)SMBJ78D
(+)SMBJ85D
(+)SMBJ90D
(+)SMBJ100D
(+)SMBJ110D
(+)SMBJ120D
(+)SMBJ130D
(+)SMBJ150D
(+)SMBJ160D
(+)SMBJ170D
SMBJ188D
Notes
• All terms and symbols are consistent with ANSI/IEEE C62.35
(1)
Pulse test: t
50 ms
p
(2)
For bi-directional types having V
WM
of 12 V and less, the I
D
limit is doubled
(3)
Surge current waveform per fig. 3 and derate per fig. 2
(+) Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional device
Revision: 10-Sep-15
Document Number: 87606
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to mount
Notes
(1)
Mounted on minimum recommended pad layout
(2)
Mounted on 5.0 mm x 5.0 mm copper pad area
SYMBOL
R
JA
(1)
R
JA
(2)
R
JM
VALUE
125
100
20
°C/W
UNIT
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMBJ5.0D-M3/H
SMBJ5.0D-M3/I
UNIT WEIGHT (g)
0.096
0.096
PREFERRED PACKAGE CODE
H
I
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
10
150
t
r
= 10 μs
T
J
= 25
°C
pulse width (t
d
) is de ned
as the point where the peak
current decays to 50 % of I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
P
PPM
- Peak Pulse Power (kW)
100
Peak value I
PPM
Half value - I
PP
/2
1
50
10/1000 μs waveform
as de ned by R.E.A.
t
d
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.2" x 0.2" (5.0 mm x 5.0 mm)
copper pad areas
0.1
10
100
1000
10 000
0
t
d
- Pulse Width (μs)
Fig. 1 - Peak Pulse Power Rating Curve
t
p
- Time (ms)
Fig. 3 - Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
10000
75
C
J
- Junction Capacitance (pF)
Measured at zero bias
1000
50
100
Measured at
stand-off
voltage, V
WM
10
Uni-Directional
Bi-Directional
1
1
10
T
J
= 25 °C
f = 1.0 MHz
100
25
0
0
25
50
75
100
125
150
T
J
- Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
V
WM
- Reverse
Stand-Off
Voltage (V)
Fig. 4 - Typical Junction Capacitance
Revision: 10-Sep-15
Document Number: 87606
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMBJ5.0D thru SMBJ188D, SMBJ5.0CD thru SMBJ120CD
www.vishay.com
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
1000
Junction to Ambient
Mounted on minimum
recommend pad area
P
M(av)
-
Steady State
Power Dissipation (W)
6
T
A
=T
M
mounted on inifinite heatsink
5
4
3
2
1
0
0
25
50
75
100
125
150
Mounted on minimum
recommend pad layout
100
10
1
Mounted on 5.0 x 5.0 mm
copper pad area
0.1
0.001
0.1
10
1000
T
A
- Ambient Temperature (°C)
Fig. 5 - Power Dissipation Derating Curve
t
p
- Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Note
• Fig.1, 10 000 μs P
ppm
is actual test for V
WM
60 V types, over 60 V types 10 000 μs P
ppm
is curve extensional value.
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMBJ)
Cathode Band
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
Mounting Pad Layout
0.085 (2.159)
MAX.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
0.096 (2.44)
0.084 (2.13)
0.220 REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 10-Sep-15
Document Number: 87606
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000

SMBJ8.0CD-M3/I相似产品对比

SMBJ8.0CD-M3/I SMBJ8.0D-M3/I SMBJ110CD-M3/I SMBJ6.5CD-M3/I SMBJ12D-M3/I
描述 Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMBJ, 2 PIN Trans Voltage Suppressor Diode, 600W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMBJ, 2 PIN Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMBJ, 2 PIN Trans Voltage Suppressor Diode, 600W, 6.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMBJ, 2 PIN Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMBJ, 2 PIN
是否Rohs认证 符合 符合 符合 符合 符合
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
包装说明 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown unknown unknow unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
Factory Lead Time 12 weeks 12 weeks 12 weeks 12 weeks 12 weeks
其他特性 EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
最大击穿电压 9.69 V 9.69 V 133 V 7.87 V 14.5 V
最小击穿电压 9.03 V 9.03 V 124 V 7.33 V 13.5 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码 DO-214AA DO-214AA DO-214AA DO-214AA DO-214AA
JESD-30 代码 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
JESD-609代码 e3 e3 e3 e3 e3
湿度敏感等级 1 1 1 1 1
最大非重复峰值反向功率耗散 600 W 600 W 600 W 600 W 600 W
元件数量 1 1 1 1 1
端子数量 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260 260 260 260
极性 BIDIRECTIONAL UNIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL UNIDIRECTIONAL
最大功率耗散 1 W 1 W 1 W 1 W 1 W
最大重复峰值反向电压 8 V 8 V 110 V 6.5 V 12 V
表面贴装 YES YES YES YES YES
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 C BEND C BEND C BEND C BEND C BEND
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 30 30 30 30
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