2SB1601,2SB1601 pdf中文资料,2SB1601引脚图,2SB1601电路-Datasheet-电子工程世界

2SB1601: 产品描述Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon; 产品类别分立半导体晶体管; 文件大小82KB，共1页; 制造商Panasonic(松下); 官网地址http://www.panasonic.co.jp/semicon/e-index.html

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2SB1601概述

Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon

2SB1601规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code	unknow
ECCN代码	EAR99
最大集电极电流 (IC)	1 A
集电极-发射极最大电压	150 V
配置	SINGLE
最小直流电流增益 (hFE)	120
JESD-30 代码	R-PDSO-F3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
Base Number Matches	1

2SB1601相似产品对比

	2SB1601	2SB1598	2SB1618	2SD2456	2SB1597	2SD2482	2SD2455	2SD2458	2SB1600
描述	Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon
包装说明	SMALL OUTLINE, R-PDSO-F3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PDSO-G3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PDSO-G3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	1 A	1.5 A	0.5 A	1.5 A	1 A	0.5 A	1 A	1 A	1 A
集电极-发射极最大电压	150 V	40 V	10 V	40 V	50 V	10 V	50 V	100 V	100 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
JESD-30 代码	R-PDSO-F3	R-PSIP-T3	R-PDSO-G3	R-PSIP-T3	R-PSIP-T3	R-PDSO-G3	R-PSIP-T3	R-PDSO-F3	R-PDSO-F3
元件数量	1	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	NPN	PNP	NPN	NPN	NPN	PNP
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	NO	YES	NO	NO	YES	NO	YES	YES
端子形式	FLAT	THROUGH-HOLE	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	THROUGH-HOLE	FLAT	FLAT
端子位置	DUAL	SINGLE	DUAL	SINGLE	SINGLE	DUAL	SINGLE	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
最小直流电流增益 (hFE)	120	80	-	80	85	-	85	120	120
Base Number Matches	1	1	1	1	1	1	1	1	-

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