PRELIMINARY
PTF 10123*
GOLDMOS
®
Field Effect Transistor
5 Watts, 2.1–2.2 GHz
Description
The 10123 is a
GOLDMOS
FET intended for large signal applications
from 2.1 to 2.2 GHz. It operates with 47% efficiency and 11 db minimum
gain. Nitride surface passivation and gold metallization ensure
excellent device lifetime and reliability.
•
Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 5 Watts Min
- Power Gain = 11 dB Min
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
•
•
•
•
•
Typical Output Power vs. Input Power
8
7
6
5
4
3
2
1
0
0.0
0.2
0.4
0.6
V
DD
= 28 V
I
DQ
= 70 mA
f = 2.17 GHz
123
456
005
5
Output Power (Watts)
101
23
Input Power (Watts)
Package 20244
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 1 W, I
DQ
= 70 mA, f = 2.11, 2.17 GHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 70 mA, f = 2.17 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 5 W, I
DQ
= 70 mA, f = 2.17 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 5 W, I
DQ
= 70 mA, f = 2.17 GHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
D
Y
Min
11
5
40
—
Typ
—
6.5
47
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
*
Note: Specifications for this product are preliminary and subject to change without notice. Please contact your sales representative for further product information.
Complete product infromation is available on our Website at: www.ericsson.com/rfpower.
e
1
PRELIMINARY PTF 10123
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
e
Min
65
—
3.0
—
Typ
—
—
—
0.8
Max
—
1.0
5.0
—
Units
Volts
µA
Volts
Siemens
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 20 mA
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transconductance
V
DS
= 26 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 2 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
±20
200
39
0.22
–40 to +150
4.8
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Impedance Data
V
DD
= 28 V, P
OUT
= 5 W, I
DQ
= 70 mA
D
Z Source
Z Load
Z
0
= 50
W
G
S
Frequency
GHz
2.10
2.12
2.15
2.17
2.20
R
Z Source
W
jX
-7.48
-7.44
-8.00
-8.64
-8.67
R
3.40
3.35
3.30
3.23
3.40
Z Load
W
jX
-3.66
-4.12
-4.81
-5.04
-4.96
6.60
6.30
5.82
5.72
5.69
2
e
Case Outline Specifications
PRELIMINARY PTF 10123
Case 20244
Ericsson Inc.
Microelectronics
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
L1
© 1998, 1999, 2000, 2001 Ericsson Inc.
EUS/KR 1522-PTF 10123 Uen Rev. PB3 10-22-01
3
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