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A3PN250-1QN100I

产品描述Field Programmable Gate Array, PBCC100, 8 X 8 MM, 0.85 HEIGHT, 0.50 MM PITCH, QFN-100
产品类别可编程逻辑器件    可编程逻辑   
文件大小3MB,共92页
制造商Microsemi
官网地址https://www.microsemi.com
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A3PN250-1QN100I概述

Field Programmable Gate Array, PBCC100, 8 X 8 MM, 0.85 HEIGHT, 0.50 MM PITCH, QFN-100

A3PN250-1QN100I规格参数

参数名称属性值
厂商名称Microsemi
包装说明,
Reach Compliance Codeunknown
JESD-30 代码S-PBCC-B100
端子数量100
封装主体材料PLASTIC/EPOXY
封装形状SQUARE
封装形式CHIP CARRIER
可编程逻辑类型FIELD PROGRAMMABLE GATE ARRAY
认证状态Not Qualified
表面贴装YES
端子形式BUTT
端子位置BOTTOM

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Advance v0.3
ProASIC 3 nano Flash FPGAs
Features and Benefits
Wide Range of Features
• 10 k to 250 k System Gates
• Up to 36 kbits of True Dual-Port SRAM
• Up to 71 User I/Os
®
®
Advanced I/Os
• 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
• Bank-Selectable I/O Voltages—up to 4 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V /
2.5 V / 1.8 V / 1.5 V
• Wide Range Power Supply Voltage Support per JESD8-B,
Allowing I/Os to Operate from 2.7 V to 3.6 V
• I/O Registers on Input, Output, and Enable Paths
• Selectable Schmitt Trigger Inputs
• Hot-Swappable and Cold-Sparing I/Os
• Programmable Output Slew Rate
and Drive Strength
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the ProASIC3 Family
• Up to Six CCC Blocks, One with an Integrated PLL
• Configurable Phase Shift, Multiply/Divide, Delay
Capabilities and External Feedback
• Wide Input Frequency Range (1.5 MHz to 350 MHz)
Reprogrammable Flash Technology
130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process
Live at Power-Up (LAPU) Level 0 Support
Single-Chip Solution
Retains Programmed Design when Powered Off
High Performance
• 350 MHz System Performance
In-System Programming (ISP) and Security
• Secure ISP Using On-Chip 128-Bit Advanced Encryption
Standard (AES) Decryption via JTAG (IEEE 1532–compliant)
• FlashLock
®
to Secure FPGA Contents
Clock Conditioning Circuit (CCC) and PLL
Low Power
Low-Power ProASIC3 nano Products
1.5 V Core Voltage for Low Power
Support for 1.5 V-Only Systems
Low-Impedance Flash Switches
Embedded Memory
• 1 kbit of FlashROM User Nonvolatile Memory
• SRAMs and FIFOs with Variable-Aspect-Ratio 4,608-Bit RAM
Blocks (×1, ×2, ×4, ×9, and ×18 organizations)
• True Dual-Port SRAM (except ×18 organization)
High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure
Enhanced Commercial Temperature Range
• –20°C to +70°C
ProASIC3 nano Devices
ProASIC3 nano Devices
System Gates
Typical Equivalent Macrocells
VersaTiles (D-flip-flops)
RAM kbits (1,024 bits)
4,608-Bit
Blocks
2
2
2
A3PN010
10 k
86
260
1k
4
2
34
34
QN48
A3PN015
15 k
128
384
1k
4
3
49
QN68
A3PN020
20 k
172
520
1k
4
3
52
52
QN68
A3PN030
1
30 k
256
768
1k
6
2
81
83
QN48, QN68
VQ100
A3PN060
60 k
512
1,536
18
4
1k
Yes
1
18
2
71
71
QN100
VQ100
A3PN125
125 k
1,024
3,072
36
8
1k
Yes
1
18
2
71
71
QN100
VQ100
A3PN250
250 k
2,048
6,144
36
8
1k
Yes
1
18
4
68
68
QN100
VQ100
FlashROM Bits
Secure (AES) ISP
Integrated PLL in CCCs
2
VersaNet Globals
3
I/O Banks
Maximum User I/Os
Maximum User I/Os (Known Good Die)
Package Pins
QFN
VQFP
Notes:
1. A3PN030 is available in the Z feature grade only and offers package compatibility with the lower density nano devices. Refer to
"ProASIC3 nano Ordering Information" on page III.
2. A3PN030 and smaller devices do not support this feature.
3. Six chip (main) and three quadrant global networks are available for A3PN060 and above.
4. For higher densities and support of additional features, refer to the
ProASIC3
and
ProASIC3E
handbooks.
† A3PN030 and smaller devices do not support this feature.
November 2008
© 2008 Actel Corporation
I

 
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