TSHF5210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
FEATURES
Package type: leaded
Package form: T-1¾
Dimensions (in mm):
∅
5
Leads with stand-off
Peak wavelength:
λ
p
= 890 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
ϕ
= ± 10°
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: f
c
= 12 MHz
Good spectral matching with Si photodetectors
Compliant to RoHS directive 2002/95/EC and
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
•
•
•
•
•
•
•
•
•
•
•
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94
8390
DESCRIPTION
TSHF5210 is an infrared, 890 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
in
APPLICATIONS
• Infrared high speed remote control and free air data
transmission systems with high modulation frequencies or
high data transmission rate requirements
• Transmission systems according to IrDA requirements and
for carrier frequency based systems (e.g. ASK/FSK -
coded, 450 kHz or 1.3 MHz)
• Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT
I
e
(mW/sr)
ϕ
(deg)
± 10
λ
P
(nm)
890
t
r
(ns)
30
TSHF5210
180
Note
Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
TSHF5210
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
T
amb
= 25 °C, unless otherwise specified
Document Number: 81313
Rev. 1.3, 25-Jun-09
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
1
t
≤
5 s, 2 mm from case
J-STD-051, leads 7 mm,
soldered on PCB
t
p
/T = 0.5, t
p
= 100 µs
t
p
= 100 µs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1.5
160
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
TSHF5210
Vishay Semiconductors
High Speed Infrared Emitting Diode,
890 nm, GaAlAs Double Hetero
180
120
100
80
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20 30
40
50
60
70
80
90
100
21212
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
60
40
20
0
0
10
20 30 40
50 60 70
80
90 100
R
thJA
= 230 K/W
21211
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Cut-off frequency
Virtual source diameter
Note
T
amb
= 25 °C, unless otherwise specified
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 µs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 µs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
f
c
d
120
125
180
1800
50
- 0.35
± 10
890
40
0.25
30
30
12
3.7
360
MIN.
TYP.
1.4
2.3
- 1.8
10
MAX.
1.6
UNIT
V
V
mV/K
µA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
www.vishay.com
2
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81313
Rev. 1.3, 25-Jun-09
TSHF5210
High Speed Infrared Emitting Diode,
Vishay Semiconductors
890 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
1000
t
P
/T = 0.01
0.02
T
amb
< 50 °C
1000
I
F
- Forward Current (mA)
Radiant Power (mW)
e
-
0.05
0.1
100
10
0.2
0.5
100
0.01
1
0.1
0.1
1
10
100
16971
1
10
100
1000
16031
t
P
- Pulse Duration (ms)
I
F
- Forward Current (mA)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Power vs. Forward Current
1000
1.25
Φ
e rel
- Relative Radiant Power
4
I
F
- Forward Current (mA)
1.0
100
t
P
= 100
µs
t
P
/T = 0.001
10
0.75
0.5
0.25
1
0
18873
1
3
2
V
F
- Forward
Voltage
(V)
0
800
20082
900
1000
λ
-
Wavelength
(nm)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Power vs. Wavelength
0°
10 000
10°
20°
30°
I
e rel
- Relative Radiant Intensity
I
e
- Radiant Intensity (mW/sr)
1000
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
100
10
t
P
= 0.1 ms
1
1
21213
10
100
1000
15989
I
F
- Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81313
Rev. 1.3, 25-Jun-09
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
3
ϕ
- Angular Displacement
TSHF5210
Vishay Semiconductors
High Speed Infrared Emitting Diode,
890 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS
in millimeters
A
C
Ø 5.8 ± 0.15
R 2.49 (sphere)
7.7 ± 0.15
12.5 ± 0.3
8.7
± 0.3
(4.7)
35.5 ± 0.55
< 0.7
Area not plane
1.1 ± 0.25
Ø 5 ± 0.15
1 min.
0.15
0.5 + 0.05
-
2.54 nom.
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
6.544-5258.02-4
Issue: 6; 19.05.09
95 10916
www.vishay.com
4
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81313
Rev. 1.3, 25-Jun-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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