NCV8402, NCV8402A
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8402/A is a three terminal protected Low−Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain−to−Gate clamping for overvoltage
protection. This device offers protection and is suitable for harsh
automotive environments.
Features
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V
(BR)DSS
(Clamped)
42 V
R
DS(ON)
TYP
165 mW @ 10 V
I
D
MAX
2.0 A*
•
•
•
•
•
•
•
•
Short−Circuit Protection
Thermal Shutdown with Automatic Restart
Overvoltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
Typical Applications
*Max current limit value is dependent on input
condition.
Drain
Overvoltage
Protection
Gate
Input
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
•
Switch a Variety of Resistive, Inductive and Capacitive Loads
•
Can Replace Electromechanical Relays and Discrete Circuits
•
Automotive / Industrial
4
SOT−223
CASE 318E
STYLE 3
Source
MARKING
DIAGRAM
DRAIN
4
AYW
xxxxx
G
1
G
2
3
1
2
3
SOURCE
GATE
DRAIN
A
= Assembly Location
Y
= Year
W
= Work Week
xxxxx = V8402 or 8402A
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NCV8402STT1G
NCV8402ASTT1G
NCV8402STT3G
NCV8402ASTT3G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
†
1000/Tape & Reel
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
February, 2012
−
Rev. 8
1
Publication Order Number:
NCV8402/D
NCV8402, NCV8402A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
Gate−to−Source Voltage
Continuous Drain Current
Power Dissipation
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
T
= 25°C (Note 1)
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Tab Steady State (Note 1)
(R
G
= 1.0 MW)
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
Value
42
42
"14
1.1
1.7
8.9
114
72
14
150
87
−40
to 150
−55
to 150
Unit
V
V
V
W
Internally Limited
Thermal Resistance
R
qJA
R
qJA
R
qJT
E
AS
V
LD
T
J
T
stg
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 32 V, V
G
= 5.0 V, I
PK
= 1.0 A, L = 300 mH, R
G(ext)
= 25
W)
Load Dump Voltage
Operating Junction Temperature
Storage Temperature
(V
GS
= 0 and 10 V, R
I
= 2.0
W,
R
L
= 9.0
W,
t
d
= 400 ms)
mJ
V
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
+
I
D
DRAIN
I
G
+
GATE
VDS
VGS
SOURCE
−
−
Figure 1. Voltage and Current Convention
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2
NCV8402, NCV8402A
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 3)
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 10 mA, T
J
= 25°C
V
GS
= 0 V, I
D
= 10 mA, T
J
= 150°C
(Note 5)
V
GS
= 0 V, V
DS
= 32 V, T
J
= 25°C
V
GS
= 0 V, V
DS
= 32 V, T
J
= 150°C
(Note 5)
Gate Input Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Static Drain−to−Source On−Resistance
V
GS
= 10 V, I
D
= 1.7 A, T
J
= 25°C
V
GS
= 10 V, I
D
= 1.7 A, T
J
= 150°C
(Note 5)
V
GS
= 5.0 V, I
D
= 1.7 A, T
J
= 25°C
V
GS
= 5.0 V, I
D
= 1.7 A, T
J
= 150°C
(Note 5)
V
GS
= 5.0 V, I
D
= 0.5 A, T
J
= 25°C
V
GS
= 5.0 V, I
D
= 0.5 A, T
J
= 150°C
(Note 5)
Source−Drain Forward On Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−ON Time (10% V
IN
to 90% I
D
)
Turn−OFF Time (90% V
IN
to 10% I
D
)
Slew−Rate ON (70% V
DS
to 50% V
DS
)
Slew−Rate OFF (50% V
DS
to 70% V
DS
)
Current Limit
V
GS
= 10 V, V
DD
= 12 V
I
D
= 2.5 A, R
L
= 4.7
W
V
GS
= 10 V, V
DD
= 12 V,
R
L
= 4.7
W
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 25°C
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 150°C
(Note 5)
V
DS
= 10 V, V
GS
= 10 V, T
J
= 25°C
V
DS
= 10 V, V
GS
= 10 V, T
J
= 150°C
(Note 5)
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
GATE INPUT CHARACTERISTICS
(Note 5)
Device ON Gate Input Current
Current Limit Gate Input Current
Thermal Limit Fault Gate Input Current
V
GS
= 5 V I
D
= 1.0 A
V
GS
= 10 V I
D
= 1.0 A
V
GS
= 5 V, V
DS
= 10 V
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 5 V, V
DS
= 10 V
V
GS
= 10 V, V
DS
= 10 V
ESD ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted) (Note 5)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
ESD
4000
400
V
I
GTL
I
GCL
I
GON
50
400
0.05
0.4
0.15
0.7
mA
mA
mA
V
GS
= 5.0 V (Note 5)
V
GS
= 5.0 V
V
GS
= 10 V (Note 5)
V
GS
= 10 V
T
LIM(off)
DT
LIM(on)
T
LIM(off)
DT
LIM(on)
150
t
ON
t
OFF
−dV
DS
/dt
ON
dV
DS
/dt
OFF
I
LIM
3.7
2.3
4.2
2.7
150
25
120
0.8
0.3
4.3
3.0
4.8
3.6
175
15
165
15
185
5.0
3.7
5.4
4.5
200
°C
A
V/ms
ms
V
GS
= 0 V, I
S
= 7.0 A
V
SD
V
GS
= V
DS
, I
D
= 150
mA
V
GS(th)
V
GS(th)
/T
J
R
DS(on)
1.3
1.8
4.0
165
305
195
360
190
350
1.0
200
400
230
460
230
460
V
2.2
V
−mV/°C
mW
V
DS
= 0 V, V
GS
= 5.0 V
I
GSSF
I
DSS
V
(BR)DSS
42
40
46
45
0.25
1.1
50
55
55
4.0
20
100
mA
mA
V
Test Condition
Symbol
Min
Typ
Max
Unit
SELF PROTECTION CHARACTERISTICS
(T
J
= 25°C unless otherwise noted) (Note 4)
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3
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
10
1000
E
max
(mJ)
I
L(max)
(A)
T
Jstart
= 25°C
100
T
Jstart
= 25°C
T
Jstart
= 150°C
1
10
10
10
T
Jstart
= 150°C
L (mH)
100
L (mH)
100
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
10
1000
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
T
Jstart
= 25°C
E
max
(mJ)
I
L(max)
(A)
T
Jstart
= 25°C
100
T
Jstart
= 150°C
1
T
Jstart
= 150°C
0.1
1
TIME IN CLAMP (ms)
10
10
1
TIME IN CLAMP (ms)
10
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
8
7
6
5
I
D
(A)
4
3
2
1
0
0
1
2
V
DS
(V)
3
3V
1
V
GS
= 2.5 V
4
5
0
1
5
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
T
A
= 25°C
8V
10 V
6V
5V
4V
3.5 V
I
D
(A)
V
DS
= 10 V
4
3
25°C
100°C
−40°C
150°C
2
2
3
V
GS
(V)
4
5
Figure 6. On−state Output Characteristics
Figure 7. Transfer Characteristics
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4
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
400
150°C, I
D
= 0.5 A
300
300
R
DS(on)
(mW)
150°C, I
D
= 1.7 A
R
DS(on)
(mW)
250
200
150
100
50
0.2
−40°C,
V
GS
= 5 V
−40°C,
V
GS
= 10 V
7
V
GS
(V)
8
9
10
0.4
0.6
0.8
1
1.2
I
D
(A)
1.4
1.6
1.8
2
100°C, I
D
= 1.7 A
25°C, I
D
= 0.5 A
150°C, V
GS
= 10 V
100°C, V
GS
= 5 V
25°C, V
GS
= 5 V
25°C, V
GS
= 10 V
100°C, V
GS
= 10 V
350
150°C, V
GS
= 5 V
200
100°C, I
D
= 0.5 A
25°C, I
D
= 1.7 A
100
−40°C,
I
D
= 1.7 A
0
4
5
6
−40°C,
I
D
= 0.5 A
Figure 8. R
DS(on)
vs. Gate−Source Voltage
2
1.75
1.5
I
D
= 1.7 A
8
7
V
GS
= 5 V
I
LIM
(A)
6
5
Figure 9. R
DS(on)
vs. Drain Current
−40°C
R
DS(on)
(NORMIALZIZED)
25°C
1.25
1
V
GS
= 10 V
100°C
4
3
2
V
DS
= 10 V
5
6
7
V
GS
(V)
8
9
10
150°C
0.75
0.5
−40 −20
0
20
40
60
T (°C)
80
100
120
140
Figure 10. Normalized R
DS(on)
vs. Temperature
Figure 11. Current Limit vs. Gate−Source
Voltage
10
V
GS
= 0 V
1
150°C
8
7
6
I
LIM
(A)
5
4
3
V
DS
= 10 V
2
−40 −20
0
V
GS
= 10 V
I
DSS
(mA)
0.1
100°C
0.01
25°C
0.001
−40°C
V
GS
= 5 V
20
40
60
80
100
120
140
0.0001
10
15
20
25
V
DS
(V)
30
35
40
T
J
(°C)
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
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