PE426412
Document Category: Preliminary Specification
UltraCMOS® SP12T RF Switch, 10 MHz–8 GHz
Features
• High isolation: 39 dB @ 6 GHz
• Low insertion loss: 1.3 dB @ 6 GHz
• RF T
RISE
/T
FALL
time of 100 ns
• Power handling of 31 dBm CW
• Logic select (LS) pin provides maximum control
logic flexibility
• Terminated all-off state mode
• –55 °C to +125 °C operating temperature support
• Packaging – 32-lead 5 × 5 × 0.85 mm QFN
Figure 1 •
PE426412 Functional Diagram
RFC
RF1
RF2
RF3
RF4
RF5
RF6
CMOS Control
Driver and ESD
RF12
RF11
RF10
RF9
RF8
RF7
switch
configuration
Applications
• Harsh industrial applications up to 8 GHz
• Applications that require extended temperature
support in the range of –55 °C to +125 °C
• Filter bank switching
• RF signal routing
V1 V2 V3 V4
50Ω
Product Description
The PE426412 is a HaRP™ technology-enhanced absorptive SP12T RF switch that supports a frequency range
from 10 MHz to 8 GHz. It delivers low insertion loss, fast RF T
RISE
/T
FALL
time, and high isolation in the operating
temperature range from –55 °C to +125 °C. It is ideal for harsh industrial applications that require extended
support in this temperature range. No blocking capacitors are required if DC voltage is not present on the RF
ports.
The PE426412 is manufactured on Peregrine’s UltraCMOS
®
process, a patented advanced form of silicon-on-
insulator (SOI) technology.
Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
©2017, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Preliminary Specification
www.psemi.com
DOC-77561-2 – (03/2017)
PE426412
SP12T RF Switch
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in
Table 1
may cause permanent damage. Operation should be
restricted to the limits in
Table 2.
Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in
Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 •
Absolute Maximum Ratings for PE426412
Parameter/Condition
Supply voltage, V
DD
Digital input voltage (V1, V2, V3, V4, LS)
RF input power (RFC–RFX, 50Ω)
RF input power to terminated ports, CW (RFX, 50Ω)
Maximum junction temperature
Storage temperature range
ESD voltage HBM, all pins
(1)
ESD voltage CDM, all pins
(2)
Notes:
1) Human body model (MIL-STD 883 Method 3015).
2) Charged device model (JEDEC JESD22-C101).
Min
–0.3
–0.3
Max
5.5
3.6
See
Figure 2
See
Figure 2
+150
Unit
V
V
dBm
dBm
°C
°C
V
V
–65
+150
1000
1000
Page 2
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DOC-77561-2 – (03/2017)
PE426412
SP12T RF Switch
Recommended Operating Conditions
Table 2
lists the recommended operating conditions for the PE426412. Devices should not be operated outside
the recommended operating conditions listed below.
Table 2 •
Recommended Operating Conditions for PE426412
Parameter
Supply voltage, V
DD
Supply current, I
DD
Digital input high (V1, V2, V3, V4, LS)
Digital input low (V1, V2, V3, V4, LS)
Digital input current
V1, V2, V3, V4
LS
RF input power, CW (RFC–RFX)
(1)
RF input power, pulsed (RFC–RFX)
(2)
RF input power into terminated ports, CW (RFX)
(1)
Operating temperature range
Notes:
1) 100% duty cycle, all bands, 50Ω.
2) Pulsed, 5% duty cycle of 4620 µs period, 50Ω.
Min
2.3
Typ
3.3
120
Max
5.5
200
3.6
0.6
Unit
V
µA
V
V
1.17
–0.3
5
10
See
Figure 2
See
Figure 2
See
Figure 2
–55
+25
+125
µA
µA
dBm
dBm
dBm
°C
DOC-77561-2 – (03/2017)
www.psemi.com
Page 3
PE426412
SP12T RF Switch
Electrical Specifications
Table 3
provides the PE426412 key electrical specifications at +25 °C,V
DD
= 3.3V (Z
S
= Z
L
= 50Ω), unless
otherwise specified.
Table 3 •
PE426412 Electrical Specifications
Parameter
Operating frequency
10–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
10–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
10–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
10–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
10–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
10–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
Path
Condition
Min
10 MHz
Typ
Max
8 GHz
Unit
As shown
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
RFC–RF1/12
0.7
0.8
0.9
1.1
1.3
2.4
0.8
0.9
1.0
1.2
1.4
1.7
0.8
0.9
1.1
1.3
1.4
1.4
0.9
1.1
1.2
1.4
1.6
2.3
1.0
1.1
1.3
1.5
1.6
2.1
1.0
1.1
1.4
1.7
1.7
2.4
0.9
1.0
1.1
1.3
1.6
3.0
1.0
1.1
1.3
1.5
1.8
2.0
1.0
1.1
1.3
1.5
1.8
1.7
1.1
1.3
1.5
1.7
1.9
2.7
1.2
1.3
1.6
1.8
1.9
2.5
1.2
1.3
1.7
2.0
2.1
3.1
RFC–RF2/11
RFC–RF3/10
Insertion loss
(1)
RFC–RF4/9
RFC–RF5/8
RFC–RF6/7
Page 4
www.psemi.com
DOC-77561-2 – (03/2017)
PE426412
SP12T RF Switch
Table 3 •
PE426412 Electrical Specifications (Cont.)
Parameter
Path
Condition
10–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
10–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
10–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
10–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
10–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
10–100 MHz
100 MHz–1 GHz
1–2 GHz
2–4 GHz
4–6 GHz
6–8 GHz
Min
60
42
36
31
26
19
63
47
40
34
30
25
62
48
41
34
30
28
63
50
43
36
31
28
64
56
48
40
33
31
64
55
47
36
32
31
Typ
63
44
38
33
28
22
66
49
43
38
33
27
66
50
44
37
33
30
67
52
46
39
34
30
69
60
54
45
37
33
69
57
52
43
39
37
Max
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
RFC–RF1/12
RFC–RF2/11
RFC–RF3/10
Isolation
(1)
RFC–RF4/9
RFC–RF5/8
RFC–RF6/7
DOC-77561-2 – (03/2017)
www.psemi.com
Page 5
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