1KX16 3-WIRE SERIAL EEPROM, PDIP8, DIP-8
| 参数名称 | 属性值 |
| 厂商名称 | Seiko Epson Corporation |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 8 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | DATA RETENTION 10 YEARS; 1000K ENDURANCE CYCLES |
| 最大时钟频率 (fCLK) | 0.2 MHz |
| 数据保留时间-最小值 | 10 |
| 耐久性 | 1000000 Write/Erase Cycles |
| JESD-30 代码 | R-PDIP-T8 |
| 长度 | 9.3 mm |
| 内存密度 | 16384 bit |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 字数 | 1024 words |
| 字数代码 | 1000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 1KX16 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | SERIAL |
| 认证状态 | Not Qualified |
| 座面最大高度 | 4.5 mm |
| 串行总线类型 | 3-WIRE |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 1.8 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 7.62 mm |
| 最长写入周期时间 (tWC) | 10 ms |
| S-29590ADPA | S-29590ADFJA | S-29690ADFJA | S-29690ADPA | |
|---|---|---|---|---|
| 描述 | 1KX16 3-WIRE SERIAL EEPROM, PDIP8, DIP-8 | 1KX16 3-WIRE SERIAL EEPROM, PDSO8, SOP-8 | 2KX16 3-WIRE SERIAL EEPROM, PDSO8, SOP-8 | 2KX16 3-WIRE SERIAL EEPROM, PDIP8, DIP-8 |
| 零件包装代码 | DIP | SOIC | SOIC | DIP |
| 包装说明 | DIP, | SOP, | SOP, | DIP, |
| 针数 | 8 | 8 | 8 | 8 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | DATA RETENTION 10 YEARS; 1000K ENDURANCE CYCLES | DATA RETENTION 10 YEARS; 1000K ENDURANCE CYCLES | DATA RETENTION 10 YEARS; 1000K ENDURANCE CYCLES | DATA RETENTION 10 YEARS; 1000K ENDURANCE CYCLES |
| 最大时钟频率 (fCLK) | 0.2 MHz | 0.5 MHz | 0.5 MHz | 0.5 MHz |
| 数据保留时间-最小值 | 10 | 10 | 10 | 10 |
| 耐久性 | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles | 1000000 Write/Erase Cycles |
| JESD-30 代码 | R-PDIP-T8 | R-PDSO-G8 | R-PDSO-G8 | R-PDIP-T8 |
| 长度 | 9.3 mm | 4.9 mm | 4.9 mm | 9.3 mm |
| 内存密度 | 16384 bit | 16384 bit | 32768 bit | 32768 bit |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | 8 |
| 字数 | 1024 words | 1024 words | 2048 words | 2048 words |
| 字数代码 | 1000 | 1000 | 2000 | 2000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 1KX16 | 1KX16 | 2KX16 | 2KX16 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | SOP | SOP | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE |
| 并行/串行 | SERIAL | SERIAL | SERIAL | SERIAL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 4.5 mm | 1.75 mm | 1.75 mm | 4.5 mm |
| 串行总线类型 | 3-WIRE | 3-WIRE | 3-WIRE | 3-WIRE |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | NO | YES | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子形式 | THROUGH-HOLE | GULL WING | GULL WING | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 7.62 mm | 3.9 mm | 3.9 mm | 7.62 mm |
| 最长写入周期时间 (tWC) | 10 ms | 10 ms | 10 ms | 10 ms |
| 厂商名称 | Seiko Epson Corporation | - | Seiko Epson Corporation | Seiko Epson Corporation |
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