Data Sheet
PT7C5509 series
Crystal Oscillator Module ICs
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Features
•
•
•
•
•
•
•
•
•
Capacitors 6pF C
G
and 10pF C
D
built-in
Standby function with typical 6µA (V
DD
= 5 V)
low standby current (PT7C5509ALx only)
Power-save pull-up resistor built-in
(PT7C5509ALx only)
Inverter amplifier feedback resistor built-in
16 mA (V
DD
= 4.5 V) drive capability
(PT7C5509ANx)
Output three-state function
2.25 to 5.5 V supply voltage (PT7C5509ALx)
2.7 to 5.5 V supply voltage (PT7C5509ANx)
Clock output (f
O
, f
O
/2, f
O
/4, f
O
/8,f
O
/16,
f
O
/32determined by internal connection, f
O
is
oscillator frequency)
•
Die form
Description
The PT7C5509 series are crystal oscillator module ICs
that incorporate circuits to limit oscillator-stage current,
controlling total current consumption. High-frequency
capacitors are built-in, eliminating the need for
external components to make a stable fundamental-
harmonic oscillator.
Application
Used for crystal oscillator
Ordering Information
Part no.
PT7C5509Axx-1DE
PT7C5509Axx-2DE
Package type
Die form
Die form
Note:
1.Below is the detailed definition of part no.
2. “-1” & “-2” show the different die thickness; “-1”:
265±25um; “-2”: 220±20um.
PT7C
Device Type
Clock Series
XO 5509 Series
Series Type
5509
A
L
1
Output frequency
Suffix
1
2
3
4
5
6
Outp
ut
freq.
f
o
f
o
/2
f
o
/4
f
o
/8
f
o
/16
f
o
/32
f
o
f
o
/2
f
o
/4
f
o
/8
f
o
/16
f
o
/32
V
DD
(V)
Output at 3V V
DD
Max load Max freq.
(pF)
(MHz)
Output at 5V V
DD
Max load Max freq.
(pF)
(MHz)
Input
level
f
output
(V)
f
O
f
O
/2
f
O
/4
f
O
/8
f
O
/16
f
O
/32
Output
duty
level
Standby
function
Series Configuration
Series
Part No.
PT7C5509AN1
PT7C5509AN2
PT7C5509AN3
PT7C5509AN4
PT7C5509AN5
PT7C5509AN6
PT7C5509AL1
PT7C5509AL2
PT7C5509AL3
PT7C5509AL4
PT7C5509AL5
PT7C5509AL6
AN
2.7 ~
5.5
30
40
50
40
TTL
CMOS
-
AL
2.7 ~
5.5
30
40
50
40
CMO
S
CMOS
√
PT0232(06/06)
1
Ver:0
Data Sheet
PT7C5509 series
Crystal Oscillator Module ICs
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Block Diagram
Function Description
Series
AN series
AL series
AN series
When INHB goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop.
AL series
When INHB goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
Power-save Pull-up Resistance (AL series)
The INHB pull-up resistance changes in response to the input level (HIGH or LOW). When INHB goes LOW (standby state),
the pull-up resistance becomes large to reduce the current consumption during standby.
INHB
HIGH (or open)
Low
HIGH (or open)
Low
Q
Any f
O
, f
O
/2, f
O
/4, f
O
/8, f
O
/16 or f
O
/32output frequency
High impedance
Any f
O
, f
O
/2, f
O
/4, f
O
/8, f
O
/16 or f
O
/32output frequency
High impedance
Stopped
Normal operation
Oscillator
PT0232(06/06)
2
Ver:0
Data Sheet
PT7C5509 series
Crystal Oscillator Module ICs
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Pad Configuration
Sensor
Die No.
INHB
GND
XT
XTB
VDD
Q
GND
880um
Pad Coordinate File
Pad Name
X Coordinate
Y Coordinate
Pad Name
X Coordinate
Y Coordinate
77.00
117.90
257.90
524.20
sensor
-50
730.00
GND
150.90
INHB
150.90
524.20
Q
729.10
XT
150.90
357.00
VDD
729.10
XTB
150.90
217.00
GND
798.00
Note:
Substrate is connected to GND or VDD or floating.
Die Size:
880µm*680µm (Including scribe line size.)
Die Thickness:
PT7C5509ANx/ALx-1: 265±25µm; PT7C5509ANx/ALx-2: 220±20µm.
Pad Size:
100µm*100µm
Pad Description
Sym.
INHB
XT
XTB
GND
Q
V
DD
Type
I
I
O
P
O
P
Description
Output state control input. High impedance when LOW.
Amplifier input.
Crystal oscillator connected between XT and XTB
Amplifier output.
Ground.
Output. Output frequency (fo, fo /2, fo /4, fo /8, fo /16 or fo /32) determined by internal
connection, fo is oscillator frequency.
Supply voltage.
PT0232(06/06)
3
680um
Ver:0
Data Sheet
PT7C5509 series
Crystal Oscillator Module ICs
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Maximum Ratings
Storage Temperature (die form).....................................................- 65oC to +150oC
Storage Temperature (package form) ........................................- 55oC to +125oC
Ambient Temperature with Power Applied..............................................- 40oC to +85oC
Supply Voltage to Ground Potential (V
DD
to GND ..................- 0.5V to7.0V
DC Input (All Other Inputs except V
DD
& GND) . -0.5V to V
DD
+0.5V
DC Output Current (all outputs) ................................................. 25mA
Power Dissipation......................................................................500mW (package form)
Note:
Stresses greater than those listed under
MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only
and functional operation of the device at these or
any other condi-tions above those indicated in
the operational sec-tions of this specification is
not implied. Exposure to absolute maximum
rating conditions for extended periods may
affect reliability.
Recommended Operating Conditions
Sym
Parameter
Series
AN series
V
DD
Supply voltage
AL series
All series
AN series
T
A
Operating
temperature
AL series
Condition
f
f
f
f
≤
40MHz
≤
20MHz
≤
30MHz
≤
40MHz
-
Min
2.7
2.25
2.3
2.7
GND
-20
-40
-40
-20
-20
Typ
-
-
-
-
-
-
-
-
-
-
Max
5.5
2.75
2.7
5.5
V
DD
80
85
85
80
80
Unit
V
V
IN
Input voltage
V
f
≤
40MHz, 2.7V
≤V
DD
< 4.5V
f
≤
40MHz, 4.5V
≤V
DD
≤5.5V
f
≤
40MHz, 2.7V
≤
V
DD
≤5.5V
f
≤
30MHz, 2.3V
≤
V
DD
≤2.7V
f
≤
20MHz, 2.25V
≤
V
DD
≤2.75V
°C
PT0232(06/06)
4
Ver:0
Data Sheet
PT7C5509 series
Crystal Oscillator Module ICs
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DC Electrical Characteristics
3V operation (V
DD
= 2.7 to 3.3V, PT7C5509ANx: T
A
= -20 to 80°C, PT7C5509ALx: T
A
= -40 to 85°C, unless otherwise noted.)
Sym
Parameter
Condition
PT7C5509AL1
PT7C5509AN1
PT7C5509AL2
PT7C5509AN2
PT7C5509AL3
PT7C5509AN3
PT7C5509AL4
PT7C5509AN4
PT7C5509AL5
PT7C5509AN5
PT7C5509AL6
PT7C5509AN6
PT7C5509ALx
PT7C5509ANx
PT7C5509ALx
INHB pin
PT7C5509ANx
PT7C5509ALx
INHB=GND
PT7C5509ANx
PT7C5509ALx
PT7C5509ALx
PT7C5509ANx
Min
-
-
-
-
-
-
-
2.0
0.7V
DD
-
-
40
0.6
40
-
-
0.4
5.58
9.3
2.2
Typ
8
5
4
3
3
2
2
-
-
-
-
-
-
-
-200
-100
-
6
10
-
Max
17
11
9
Unit
I
DD
Current consumption
INHB=open,
Measurement cct 3, 40 MHz crystal.
load cct 2, C
L
= 15pF
mA
7
6
5
5
-
-
0.3
0.3V
DD
200
12
200
-
-
1.1
6.42
10.7
-
kΩ
MΩ
kΩ
Ω
MΩ
pF
V
V
µA
V
I
ST
Standby current
INHB = GND , Measurement cct 3
INHB pin
V
IH
High level input voltage
V
IL
Low level input voltage
R
UP
INH pull-up resistance
Measurement cct 4,
V
DD
= 3 V
INHB=GND
INHB=2.1V
-R
L
R
f
C
G
C
D
Negative resistance
Feedback resistance
Built-in capacitance
V
DD
= 3 V, T
A
= 25°C
40 MHz
Measurement cct 5
Design value, determined by the internal wafer pattern
PT7C5509ALx
PT7C5509AN1
PT7C5509AN2
I
OH
= 8mA PT7C5509AN3
PT7C5509AN4
PT7C5509AN5
PT7C5509AN6
PT7C5509ALx
I
OL
= 8mA
PT7C5509ANx
V
OH
= VDD
V
OL
= GND
V
OH
High level output
voltage
Q: Measurement cct 1
2.1
-
-
V
V
OL
I
Z
Low level output
voltage
Output leakage current
Q: Measurement cct 1
Q: Measurement cct 2, V
INH
= LOW
-
-
-
-
-
-
0.4
10
10
V
µA
PT0232(06/06)
5
Ver:0
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