D2
PA
K
BUK9628-100A
N-channel TrenchMOS logic level FET
Rev. 02 — 26 April 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
I
D
= 30 A; V
sup
≤
25 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C
Min
-
-
-
-
-
-
Typ
-
-
-
Max Unit
100
49
166
V
A
W
mΩ
mΩ
mJ
Static characteristics
18.5 28
17
-
27
45
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
NXP Semiconductors
BUK9628-100A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
2
1
3
SOT404 (D2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK9628-100A
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
V
GSM
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source voltage
source current
peak source current
non-repetitive drain-source avalanche
energy
pulsed; t
p
≤
50 µs
T
mb
= 25 °C
pulsed; T
mb
= 25 °C
I
D
= 30 A; V
sup
≤
25 V; R
GS
= 50
Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
T
mb
= 25 °C
T
mb
= 100 °C
T
mb
= 25 °C; pulsed
T
mb
= 25 °C
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-10
-
-
-
-
-55
-55
-15
-
-
-
Max
100
100
10
49
34
195
166
175
175
15
49
195
45
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
BUK9628-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2011
2 of 13
NXP Semiconductors
BUK9628-100A
N-channel TrenchMOS logic level FET
100
P
der
(%)
80
003aaf220
100
I
D
(%)
80
003aaf221
60
60
40
40
20
20
0
0
40
80
120
160
200
T
mb
(°C)
0
0
40
80
120
160
200
T
mb
(°C)
V
GS
≥
5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
003aaf222
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature
003aaf235
10
3
I
DM
(A)
10
2
R
DS(on)
= V
DS
/ I
D
120
WDSS
(%)
100
80
60
40
20
0
t
p
= 1
μs
10
μs
100
μs
10
D.C.
1 ms
10 ms
100 ms
1
1
10
10
2
V
DS
(V)
10
3
20
60
100
140
T
mb
(°C)
180
T
mb
= 25 °C; I
DM
is single pulse
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
Fig 4.
Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
BUK9628-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2011
3 of 13
NXP Semiconductors
BUK9628-100A
N-channel TrenchMOS logic level FET
10
2
I
AS
(A)
003aaf236
25 °C
10
T
j
prior to avalanche150 °C
1
10
-3
10
-2
10
-1
1
t
AV
(ms)
10
unclamped inductive load
Fig 5.
Single-shot avalanche rating; avalanche current as a function of avalanche period
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
minimum footprint ; FR4 board
Conditions
Min
-
-
Typ
-
50
Max
0.9
-
Unit
K/W
K/W
1
Z
th(j-mb)
(K/W)
10
−1
δ
= 0.5
0.2
0.1
0.05
0.02
10
−2
0
P
003aaf223
δ
=
t
p
T
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 6.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9628-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2011
4 of 13
NXP Semiconductors
BUK9628-100A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 175 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
measured from drain lead 6 mm from
package to centre of die ; T
j
= 25 °C
measured from upper edge of drain tab
to centre of die ; T
j
= 25 °C
L
S
internal source inductance
measured from source lead to source
bond pad ; T
j
= 25 °C
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C
I
S
= 49 A; V
GS
= 0 V; T
j
= 25 °C
t
rr
Q
r
reverse recovery time
recovered charge
I
S
= 49 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
3220
315
187
11
58
250
106
4.5
2.5
7.5
4293
378
256
16
87
350
148
-
-
-
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
Min
100
89
1
0.5
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
0.05
-
2
2
18.5
-
17
18.8
Max
-
-
2
-
2.3
10
500
100
100
28
70
27
31
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
source-drain voltage
-
-
-
-
0.85
1.1
63
0.22
1.2
-
-
-
V
V
ns
µC
BUK9628-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2011
5 of 13
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