TO
-22
0A
B
BUK7507-55B
N-channel TrenchMOS standard level FET
Rev. 2 — 26 July 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
I
D
= 75 A; V
sup
≤
55 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 44 V; T
j
= 25 °C;
see
Figure 13
[1]
Min
-
-
-
-
Typ
-
-
-
5.8
Max
55
75
203
7.1
Unit
V
A
W
mΩ
Static characteristics
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
gate-drain charge
-
-
351
mJ
Dynamic characteristics
Q
GD
-
17
-
nC
[1]
Continuous current is limited by package.
NXP Semiconductors
BUK7507-55B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base;
connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7507-55B
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
Type number
BUK7507-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 26 July 2011
2 of 14
NXP Semiconductors
BUK7507-55B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 75 A; V
sup
≤
55 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
[2]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
Max
55
55
20
75
75
119
478
203
175
175
119
75
478
351
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
[1]
[2]
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
[1]
[2]
Continuous current is limited by package.
Current is limited by power dissipation chip rating.
BUK7507-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 26 July 2011
3 of 14
NXP Semiconductors
BUK7507-55B
N-channel TrenchMOS standard level FET
120
I
D
(A)
80
(1)
03nn68
120
P
der
(%)
80
03na19
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
03nn66
10
3
I
D
(A)
10
2
(1)
Limit R
DSon
= V
DS
/ I
D
tp = 10
μs
100
μs
1 ms
10
10 ms
DC
100 ms
1
10
-1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7507-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 26 July 2011
4 of 14
NXP Semiconductors
BUK7507-55B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see
Figure 4
vertical in still air
Min
-
-
Typ
-
60
Max
0.74
-
Unit
K/W
K/W
1
Z
th(j-mb)
(K/W)
10
-1
δ
= 0.5
0.2
0.1
0.05
0.02
10
-2
single shot
t
p
P
03nn67
δ
=
t
p
T
t
T
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7507-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 26 July 2011
5 of 14
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