DP
AK
BUK6213-30A
N-channel TrenchMOS intermediate level FET
Rev. 03 — 2 February 2011
Product data sheet
1. Product profile
1.1 General description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for logic or standard level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
30
55
102
V
A
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 10 A;
T
j
= 25 °C; see
Figure 4;
see
Figure 5
-
10
13
mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 55 A; V
sup
≤
30 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 10 V;
avalanche energy T
j(init)
= 25 °C; unclamped
gate-drain charge V
GS
= 5 V; I
D
= 25 A;
V
DS
= 24 V
-
-
267
mJ
Dynamic characteristics
Q
GD
-
14
-
nC
[1]
Continuous current is limited by bondwires.
NXP Semiconductors
BUK6213-30A
N-channel TrenchMOS intermediate level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT428 (DPAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK6213-30A
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
BUK6213-30A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 2 February 2011
2 of 10
NXP Semiconductors
BUK6213-30A
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 55 A; V
sup
≤
30 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
[1]
[2]
[1]
[2]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
Max
30
30
20
45
55
64
257
102
175
175
64
55
257
267
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
[1]
[2]
Current is limited by power dissipation chip rating.
Continuous current is limited by bondwires.
80
I
D
(A)
60
03nk64
120
P
der
(%)
80
03na19
Capped at 55 A due to bondwires
40
40
20
0
0
0
50
100
150
T
mb
(°C)
200
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature.
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
© NXP B.V. 2011. All rights reserved.
BUK6213-30A
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 03 — 2 February 2011
3 of 10
NXP Semiconductors
BUK6213-30A
N-channel TrenchMOS intermediate level FET
10
3
I
D
(A)
10
2
100
μs
03nk62
Limit R
DSon
= V
DS
/I
D
t
p
= 10
μs
1 ms
10
Capped at 55 A due to bondwires
DC
10 ms
100 ms
1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
Min
-
-
Typ
-
71.4
Max
1.4
-
Unit
K/W
K/W
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
V
GSth
I
DSS
I
GSS
R
DSon
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 10 A
V
GS
= 10 V; I
D
= 10 A; T
j
= 175 °C
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
see
Figure 4;
see
Figure 5
BUK6213-30A
All information provided in this document is subject to legal disclaimers.
Min
30
27
1
-
0.5
-
-
-
-
-
-
Typ
-
-
1.8
-
-
0.05
2
2
15
-
10
Max
-
-
3
3.5
-
10
100
100
20
25
13
Unit
V
V
V
V
V
µA
nA
nA
mΩ
mΩ
mΩ
Static characteristics
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 03 — 2 February 2011
4 of 10
NXP Semiconductors
BUK6213-30A
N-channel TrenchMOS intermediate level FET
Table 6.
Symbol
I
DSS
Characteristics
…continued
Parameter
drain leakage current
Conditions
V
DS
= 30 V; V
GS
= 0 V; T
j
= 175 °C;
see
Figure 4;
see
Figure 5
I
D
= 25 A; V
DS
= 24 V; V
GS
= 10 V
I
D
= 25 A; V
DS
= 24 V; V
GS
= 5 V
Min
-
Typ
-
Max
500
Unit
µA
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
measured from drain to center of die
measured from source lead to source
bond pad
I
S
= 15 A; V
GS
= 0 V; T
j
= 25 °C
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 25 V
V
DS
= 25 V; R
L
= 1.2
Ω;
V
GS
= 10 V;
R
G(ext)
= 10
Ω
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
44
26
7
14
1490
505
325
12
95
75
105
2.5
7.5
-
-
-
-
1986
606
445
-
-
-
-
-
-
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
Source-drain diode
V
SD
t
rr
Q
r
-
-
-
0.85
49
27
1.2
-
-
V
ns
nC
30
R
DSon
(mΩ)
5
4.5
4
3.5
10
03nk60
2
a
1.5
03aa27
label is V
GS
(V)
20
1
20
10
0.5
0
0
50
100
150
I
D
(A)
200
0
−60
0
60
120
T
j
(
°
C)
180
Fig 4.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 5.
Normalized drain-source on-state resistance
factor as a function of junction temperature
© NXP B.V. 2011. All rights reserved.
BUK6213-30A
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 03 — 2 February 2011
5 of 10
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