PSMN8R5-100PS
17 October 2013
TO
-2
20A
B
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
Product data sheet
1. General description
Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
•
•
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive sources
3. Applications
•
•
•
•
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
j
= 25 °C; V
GS
= 10 V;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 13; Fig. 12
V
GS
= 10 V; I
D
= 25 A; V
DS
= 50 V;
Fig. 14; Fig. 15
-
-
33
111
-
-
nC
nC
[1]
Min
-
-
-
Typ
-
-
-
Max
100
100
263
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
4.5
6.4
8.5
mΩ
Dynamic characteristics
Q
GD
Q
G(tot)
E
DS(AL)S
gate-drain charge
total gate charge
Avalanche Ruggedness
non-repetitive drain-
source avalanche
energy
[1]
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A;
V
sup
≤ 100 V; R
GS
= 50 Ω; unclamped;
Fig. 3
-
-
219
mJ
Continious current limited by package.
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NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Package
Name
PSMN8R5-100PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
7. Marking
Table 4.
Marking codes
Marking code
PSMN8R5-100PS
Type number
PSMN8R5-100PS
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
V
GS
= 10 V; T
j
= 25 °C;
Fig. 1
V
GS
= 10 V; T
mb
= 100 °C;
Fig. 1
I
DM
PSMN8R5-100PS
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
= 20 kΩ
Min
-
-
-20
[1]
Max
100
100
20
100
75
429
Unit
V
V
V
A
A
A
-
-
-
peak drain current
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C;
Fig. 4
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© NXP N.V. 2013. All rights reserved
Product data sheet
17 October 2013
2 / 14
NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
Symbol
P
tot
T
stg
T
j
T
sld(M)
I
S
I
SM
E
DS(AL)S
Parameter
total power dissipation
storage temperature
junction temperature
peak soldering temperature
Conditions
T
mb
= 25 °C;
Fig. 2
Min
-
-55
-55
-
Max
263
175
175
260
Unit
W
°C
°C
°C
Source-drain diode
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A;
V
sup
≤ 100 V; R
GS
= 50 Ω; unclamped;
Fig. 3
[1]
160
I
D
(A)
120
[1]
-
-
100
429
A
A
Avalanche Ruggedness
non-repetitive drain-source
avalanche energy
-
219
mJ
Continious current limited by package.
003aak417
120
P
der
(%)
80
03aa16
(1)
80
40
40
0
0
50
100
150
T
mb
(° C)
200
0
0
50
100
150
T
mb
(°C)
200
(1) Capped at 100A due to package
Fig. 1.
Continuous drain current as a function of
mounting base temperature
Fig. 2.
Normalized total power dissipation as a
function of mounting base temperature
PSMN8R5-100PS
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© NXP N.V. 2013. All rights reserved
Product data sheet
17 October 2013
3 / 14
NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
10
3
I
AL
(A)
10
2
003aak418
10
(1)
(2)
1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
Fig. 3.
Avalanche rating; avalanche current as a function of avalanche time
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
t
p
=10 µ s
100 µ s
10
DC
1
1 ms
10 ms
100 ms
10
-1
10
-1
003aak419
1
10
10
2
V
DS
(V)
10
3
Fig. 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
Fig. 5
Min
-
Typ
0.49
Max
0.57
Unit
K/W
PSMN8R5-100PS
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© NXP N.V. 2013. All rights reserved
Product data sheet
17 October 2013
4 / 14
NXP Semiconductors
PSMN8R5-100PS
N-channel 100 V 8.5 mΩ standard level MOSFET in TO220
1
Z
th(j-mb)
(K/W)
10
-1
003aah108
δ = 0.5
0.2
0.1
0.05
0.02
10
-2
single shot
P
δ=
t
p
T
t
p
t
T
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 10; Fig. 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
Fig. 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 10
I
DSS
drain leakage current
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 100 °C
I
GSS
gate leakage current
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
Fig. 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 100 °C;
Fig. 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 13; Fig. 12
R
G
gate resistance
f = 1 MHz
0.36
0.71
1.42
Ω
4.5
6.4
8.5
mΩ
-
11.18
14.9
mΩ
-
-
-
-
-
0.02
-
2
2
16.95
1
20
100
100
22.6
µA
µA
nA
nA
mΩ
-
-
4.5
V
1
-
-
V
Min
100
90
2.4
Typ
-
-
3
Max
-
-
4
Unit
V
V
V
Static characteristics
V
GS(th)
V
GSth
PSMN8R5-100PS
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
17 October 2013
5 / 14
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