Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ITO-3P, 3 PIN
参数名称 | 属性值 |
零件包装代码 | TO-3P |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 |
Reach Compliance Code | unknow |
外壳连接 | ISOLATED |
最大集电极电流 (IC) | 8 A |
集电极-发射极最大电压 | 450 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 10 |
JESD-30 代码 | R-PSFM-T3 |
元件数量 | 1 |
端子数量 | 3 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | NPN |
功耗环境最大值 | 50 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 20 MHz |
最大关闭时间(toff) | 2200 ns |
最大开启时间(吨) | 500 ns |
VCEsat-Max | 1 V |
Base Number Matches | 1 |
2SC4080-4000 | 2SC3163-4000 | 2SC3164-4000 | 2SC3162-4000 | 2SC4082-4000 | 2SC4081-4000 | |
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描述 | Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ITO-3P, 3 PIN | Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MTO-3P, 3 PIN | Power Bipolar Transistor, 3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 15A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ITO-3P, 3 PIN | Power Bipolar Transistor, 10A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ITO-3P, 3 PIN |
零件包装代码 | TO-3P | SFM | TO-3P | SFM | TO-3P | TO-3P |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
最大集电极电流 (IC) | 8 A | 6 A | 10 A | 3 A | 15 A | 10 A |
集电极-发射极最大电压 | 450 V | 400 V | 400 V | 400 V | 450 V | 450 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 10 | 10 | 10 | 10 | 10 | 10 |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
功耗环境最大值 | 50 W | 50 W | 100 W | 45 W | 75 W | 65 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 20 MHz | 20 MHz | 20 MHz | 20 MHz | 20 MHz | 20 MHz |
最大关闭时间(toff) | 2200 ns | 1100 ns | 1100 ns | 1100 ns | 2200 ns | 2200 ns |
最大开启时间(吨) | 500 ns | 300 ns | 300 ns | 300 ns | 500 ns | 500 ns |
VCEsat-Max | 1 V | 1 V | 1 V | 1 V | 1 V | 1 V |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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