TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/727
DEVICES
LEVELS
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
2N5010S
2N5011S
2N5012S
2N5013S
2N5014S
2N5015S
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
Collector-Base Voltage
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ T
A
= +25°C
@ T
C
= +25° C
Thermal Resistance, Junction to Case
1/
P
t
R
θJC
T
j
, T
stg
1.0
7.0
20
-65 to +200
W
°C/W
°C
TO-39
2N5010S thru 2N5015S
V
EBO
I
C
I
B
V
CBO
V
CER
Symbol
Value
500
600
700
800
900
1000
500
600
700
800
900
1000
5
200
20
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
mAdc
mAdc
TO-5
2N5010 thru 2N5015
Operating & Storage Junction Temperature Range
Note:
1/ See 19500/727 for Thermal Derating Curves.
T4-LDS-0067 Rev. 2 (100293)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
Collector to Base Cutoff Current
V
CB
= 400V
V
CB
= 500V
V
CB
= 580V
V
CB
= 650V
V
CB
= 700V
V
CB
= 760V
V
CB
= 400V
V
CB
= 500V
V
CB
= 588V
V
CB
= 650V
V
CB
= 700V
V
CB
= 760V
Emitter to Base Cutoff Current
V
EB
= 4V
Collector to Base Breakdown Voltage
I
C
= 0.1mAdc
I
C
= 0.1mAdc
I
C
= 0.1mAdc
I
C
= 0.2mAdc
I
C
= 0.2mAdc
I
C
= 0.2mAdc
Emitter to Base Breakdown Voltage
I
C
= 0mA
I
E
= 0.05mA
Collector to Emitter Breakdown Voltage
R
BE
= 1KΩ
I
C
= 0.2mA, Pulsed
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
@ T
A
= +150°C
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
Symbol
Min.
Max.
10
10
10
10
10
10
10
10
10
10
10
10
20
Unit
nAdc
nAdc
nAdc
nAdc
nAdc
nAdc
uAdc
uAdc
uAdc
uAdc
uAdc
uAdc
uAdc
I
CBO1
I
CBO2
I
EBO
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
V
(BR)CBO
500
600
700
800
900
1000
5
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
V
(BR)EBO
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
V
(BR)CER
500
600
700
800
900
1000
30
30
10
10
180
180
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Forward-Current Transfer Ratio
I
C
= 25mA
I
C
= 20mA
V
CE
= 10V
V
CE
= 10V
I
C
= 5mA
V
CE
= 10V
I
C
= 20mA
h
FE1
h
FE2
@ T
A
= -55°C
h
FE3
T4-LDS-0067 Rev. 2 (100293)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted) (Cont.)
Parameters / Test Conditions
Base-Emitter Saturation Voltage
I
C
= 25mA
I
C
= 20mA
I
B
= 5mA, Pulsed
Collector-Emitter Saturation Voltage
I
C
= 25mA
I
C
= 25mA
I
C
= 25mA
I
C
= 20mA
I
C
= 20mA
I
C
= 20mA
I
B
= 5mA, Pulsed
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of small signal short-circuit forward current transfer ratio
V
CE
= 10Vdc, I
C
= 25mA, f = 10MHz
V
CE
= 10Vdc, I
C
= 20mA, f = 10MHz
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
|h
fe
|
1.0
1.0
Symbol
Min.
Max.
Unit
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
1.4
1.5
1.6
1.6
1.6
1.8
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
Symbol
Min.
Max.
1.0
1.0
Unit
Vdc
Vdc
V
BE(SAT)
V
CE(SAT)
Open circuit output capacitance
V
CB
= 10V, I
E
= 0, f = 2MHz
C
obo
pF
30
T4-LDS-0067 Rev. 2 (100293)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PACKAGE DIMENSIONS
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.240
.260
6.10
6.60
.335
.370
8.51
9.40
.200 TP
5.08 TP
.016
.019
0.41
0.48
See note 14
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.030
0.76
.029
.045
0.74
1.14
.028
.034
0.71
0.86
.010
0.25
45° TP
45° TP
1, 2, 10, 12, 13, 14
Notes
6
7
8,9
8,9
8,9
8,9
7
5
3,4
3
10
7
NOTE:
1.
2.
3.
4.
5.
6.
7.
Dimensions are in inches.
Millimeters are given for general information only.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured
by direct methods or by gauging procedure.
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled
in and beyond LL minimum.
All three leads.
The collector shall be internally connected to the case.
Dimension r (radius) applies to both inside corners of tab.
In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
Lead 1 = emitter, lead 2 = base, lead 3 = collector.
For non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-
suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max.
8.
9.
10.
11.
12.
13.
14.
T4-LDS-0067 Rev. 2 (100293)
Page 4 of 4
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