Standard SRAM, 256KX36, 3.1ns, CMOS, PBGA119
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | SAMSUNG(三星) |
| 包装说明 | BGA, BGA119,7X17,50 |
| Reach Compliance Code | unknown |
| 最长访问时间 | 3.1 ns |
| 最大时钟频率 (fCLK) | 200 MHz |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PBGA-B119 |
| JESD-609代码 | e0 |
| 内存密度 | 9437184 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 36 |
| 湿度敏感等级 | 3 |
| 端子数量 | 119 |
| 字数 | 262144 words |
| 字数代码 | 256000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 256KX36 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | BGA |
| 封装等效代码 | BGA119,7X17,50 |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 2.5/3.3,3.3 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.03 A |
| 最小待机电流 | 3.14 V |
| 最大压摆率 | 0.49 mA |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | BALL |
| 端子节距 | 1.27 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 40 |
| KM736V889G-50 | KM736V889G-67 | KM736V889G-10 | KM718V989G-10 | KM718V989G-60 | KM718V989G-72 | KM736V889G-60 | KM736V889G-72 | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 256KX36, 3.1ns, CMOS, PBGA119 | Standard SRAM, 256KX36, 3.8ns, CMOS, PBGA119 | Standard SRAM, 256KX36, 4.5ns, CMOS, PBGA119 | Standard SRAM, 512KX18, 4.5ns, CMOS, PBGA119 | Standard SRAM, 512KX18, 3.5ns, CMOS, PBGA119 | Standard SRAM, 512KX18, 3.8ns, CMOS, PBGA119 | Standard SRAM, 256KX36, 3.5ns, CMOS, PBGA119 | Standard SRAM, 256KX36, 3.8ns, CMOS, PBGA119 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
| 包装说明 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 |
| Reach Compliance Code | unknown | unknown | unknown | unknow | unknow | unknow | unknow | unknow |
| 最长访问时间 | 3.1 ns | 3.8 ns | 4.5 ns | 4.5 ns | 3.5 ns | 3.8 ns | 3.5 ns | 3.8 ns |
| 最大时钟频率 (fCLK) | 200 MHz | 149 MHz | 100 MHz | 100 MHz | 166 MHz | 138 MHz | 166 MHz | 138 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 9437184 bit | 9437184 bit | 9437184 bit | 9437184 bi | 9437184 bi | 9437184 bi | 9437184 bi | 9437184 bi |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 36 | 36 | 36 | 18 | 18 | 18 | 36 | 36 |
| 湿度敏感等级 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 端子数量 | 119 | 119 | 119 | 119 | 119 | 119 | 119 | 119 |
| 字数 | 262144 words | 262144 words | 262144 words | 524288 words | 524288 words | 524288 words | 262144 words | 262144 words |
| 字数代码 | 256000 | 256000 | 256000 | 512000 | 512000 | 512000 | 256000 | 256000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 256KX36 | 256KX36 | 256KX36 | 512KX18 | 512KX18 | 512KX18 | 256KX36 | 256KX36 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
| 封装等效代码 | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
| 电源 | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V | 2.5/3.3,3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A |
| 最小待机电流 | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V |
| 最大压摆率 | 0.49 mA | 0.4 mA | 0.3 mA | 0.3 mA | 0.45 mA | 0.35 mA | 0.45 mA | 0.35 mA |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 |
| ECCN代码 | - | - | - | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
