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MBR3045CTP

产品描述15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
产品类别半导体    分立半导体   
文件大小2MB,共5页
制造商Kersemi Electronic
官网地址http://www.kersemi.com
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MBR3045CTP概述

15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB

15 A, 45 V, 硅, 整流二极管, TO-220AB

MBR3045CTP规格参数

参数名称属性值
端子数量3
元件数量2
加工封装描述塑料, ITO-220S, 3 PIN
欧盟RoHS规范Yes
状态ACTIVE
包装形状矩形的
包装尺寸凸缘安装
端子形式THROUGH-孔
端子涂层MATTE 锡
端子位置单一的
包装材料塑料/环氧树脂
工艺SCHOTTKY
结构COMMON CATHODE, 2 ELEMENTS
壳体连接隔离
二极管元件材料
二极管类型整流二极管
应用FAST SOFT RECOVERY
相数1
最大重复峰值反向电压45 V
最大平均正向电流15 A
最大非重复峰值正向电流250 A

文档预览

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VS-MBRB30..CTPbF, VS-MBR30..CT-1PbF Series
VS-MBRB30..CTPbF
VS-MBR30..CT-1PbF
FEATURES
150 °C T
J
operation
Low forward voltage drop
High frequency operation
Center tap D
2
PAK and TO-262 packages
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
D
2
PAK
TO-262
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
2 x 15 A
35 V/45 V
100 mA at 125 °C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
FRM
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
20 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform (per device)
T
C
= 123 °C (per leg)
VALUES
30
30
35/45
1020
0.6
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB3035CTPbF
VS-MBR3035CT-1PbF
35
VS-MBRB3045CTPbF
VS-MBR3045CT-1PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
I
FRM
TEST CONDITIONS
T
C
= 123 °C, rated V
R
Rated V
R
, square wave, 20 kHz, T
C
= 123 °C
5 μs sine or 3 μs
rect. pulse
Following any rated load condition
and with rated V
RRM
applied
VALUES
15
30
30
1020
200
10
2
mJ
A
A
UNITS
Peak repetitive forward current per leg
Non-repetitive peak surge current
I
FSM
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
T
J
= 25 °C, I
AS
= 2 A, L = 5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
E
AS
I
AR
www.kersemi.com
1

MBR3045CTP相似产品对比

MBR3045CTP VS-MBR3035CT-1PbF VS-MBR3045CT-1PbF VS-MBRB3035CTPbF VS-MBRB3045CTPbF
描述 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 15 A, 45 V, SILICON, RECTIFIER DIODE 15 A, 35 V, SILICON, RECTIFIER DIODE 15 A, 45 V, SILICON, RECTIFIER DIODE

 
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