MBR2515L
. . . employing the Schottky Barrier principle in a large metal–to–silicon power
diode. State–of–the–art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, low voltage converters, OR’ing diodes,
and polarity protection devices.
•
Very Low Forward Voltage (0.28 V Maximum @ 19 Amps,
70°C)
•
Guardring for Stress Protection
•
Highly Stable Oxide Passivated Junction (100°C Operating
Junction Temperature)
•
Epoxy Meets UL94, VO at 1/8″
Mechanical Characteristics
•
Case: Epoxy, Molded
•
Weight: 1.9 grams (approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes: 260°C Max. for 10
Seconds
•
Shipped 50 Units Per Plastic Tube
•
Marking: B2515L
MAXIMUM RATINGS (Per Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 90°C
Peak Repetitive Forward Current, Per Leg
(Rated VR, Square Wave, 20 kHz) TC = 90°C
Non Repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0
µs,
1.0 kHz)
Operating Junction Temperature
Storage Temperature
Symbol
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
TJ
Tstg
Max
15
Unit
Volts
SCHOTTKY BARRIER
RECTIFIER
25 AMPERES
15 VOLTS
4
1
3
4
1
3
CASE 221B–03, STYLE 1
(TO–220AC)
25
30
150
1.0
– 65 to +100
– 65 to +125
Amps
Amps
Amps
Amps
°C
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
R
θJC
2.0
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(IF = 25 Amps, TJ = 25°C)
(IF = 25 Amps, TJ = 70°C)
(IF = 19 Amps, TJ = 70°C)
Maximum Instantaneous Reverse Current (1)
(Rated DC Voltage, TJ = 25°C)
(Rated DC Voltage, TJ = 70°C)
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%.
VF
0.45
0.42
0.28
IR
15
200
mA
Volts
Rectifier Device Data
微控制器 MCU
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