BZT52H series
Single Zener diodes in a SOD123F package
Rev. 3 — 7 December 2010
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
Total power dissipation:
≤
830 mW
Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
Small plastic package suitable for
surface-mounted design
Low differential resistance
AEC-Q101 qualified
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
tot
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
I
F
= 10 mA
T
amb
≤
25
°C
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
0.9
375
830
Unit
V
mW
mW
[1]
[2]
[3]
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
1
2
006aaa152
[1]
The marking bar indicates the cathode.
NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
3. Ordering information
Table 3.
Ordering information
Package
Name
BZT52H-B2V4 to
BZT52H-C75
[1]
[1]
Type number
Description
plastic surface-mounted package; 2 leads
Version
SOD123F
-
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Marking
code
DC
DD
DE
DF
DG
DH
DJ
DK
DL
DM
DN
DP
DQ
DR
DS
DT
DU
DV
DW
Type number
BZT52H-B15
BZT52H-B16
BZT52H-B18
BZT52H-B20
BZT52H-B22
BZT52H-B24
BZT52H-B27
BZT52H-B30
BZT52H-B33
BZT52H-B36
BZT52H-B39
BZT52H-B43
BZT52H-B47
BZT52H-B51
BZT52H-B56
BZT52H-B62
BZT52H-B68
BZT52H-B75
-
Marking
code
DX
DY
DZ
E1
E2
E3
E4
E5
E6
E7
E8
E9
EA
EB
EC
ED
EE
EF
-
Type number
BZT52H-C2V4
BZT52H-C2V7
BZT52H-C3V0
BZT52H-C3V3
BZT52H-C3V6
BZT52H-C3V9
BZT52H-C4V3
BZT52H-C4V7
BZT52H-C5V1
BZT52H-C5V6
BZT52H-C6V2
BZT52H-C6V8
BZT52H-C7V5
BZT52H-C8V2
BZT52H-C9V1
BZT52H-C10
BZT52H-C11
BZT52H-C12
BZT52H-C13
Marking
code
B3
B4
B5
B6
B7
B8
B9
BA
BB
BC
BD
BE
BF
BG
BH
BJ
BK
BL
BM
Type number
BZT52H-C15
BZT52H-C16
BZT52H-C18
BZT52H-C20
BZT52H-C22
BZT52H-C24
BZT52H-C27
BZT52H-C30
BZT52H-C33
BZT52H-C36
BZT52H-C39
BZT52H-C43
BZT52H-C47
BZT52H-C51
BZT52H-C56
BZT52H-C62
BZT52H-C68
BZT52H-C75
-
Marking
code
BN
BP
BQ
BR
BS
BT
BU
BV
BW
BX
BY
BZ
C1
C2
C3
C4
C5
C6
-
Type number
BZT52H-B2V4
BZT52H-B2V7
BZT52H-B3V0
BZT52H-B3V3
BZT52H-B3V6
BZT52H-B3V9
BZT52H-B4V3
BZT52H-B4V7
BZT52H-B5V1
BZT52H-B5V6
BZT52H-B6V2
BZT52H-B6V8
BZT52H-B7V5
BZT52H-B8V2
BZT52H-B9V1
BZT52H-B10
BZT52H-B11
BZT52H-B12
BZT52H-B13
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
2 of 13
NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
Parameter
forward current
non-repetitive peak
reverse current
non-repetitive peak
reverse power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
t
p
= 100
μs;
square wave; T
j
= 25
°C
prior to surge.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[1]
Conditions
Min
-
-
Max
250
see
Table 8, 9
and
10
40
375
830
150
+150
+150
Unit
mA
P
ZSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
-
-
-
-
−65
−65
W
mW
mW
°C
°C
°C
T
amb
≤
25
°C
[2]
[3]
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
330
150
70
Unit
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
3 of 13
NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
[1]
Parameter
forward voltage
Conditions
I
F
= 10 mA
[1]
Min
-
Typ
-
Max
0.9
Unit
V
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
Table 8.
Characteristics per type; BZT52H-B2V4 to BZT52H-C24
T
j
= 25
°
C unless otherwise specified.
BZT52H Sel
-xxx
Working
voltage
V
Z
(V);
I
Z
= 5 mA
Min
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
2.35
2.2
2.65
2.5
2.94
2.8
3.23
3.1
3.53
3.4
3.82
3.7
4.21
4.0
4.61
4.4
5.0
4.8
5.49
5.2
6.08
5.8
6.66
6.4
7.35
7.0
8.04
7.7
Max
2.45
2.6
2.75
2.9
3.06
3.2
3.37
3.5
3.67
3.8
3.98
4.1
4.39
4.6
4.79
5.0
5.2
5.4
5.71
6.0
6.32
6.6
6.94
7.2
7.65
7.9
8.36
8.7
80
10
0.7
5
3.2
6.2
150
4.0
80
10
1
5
2.5
5.3
150
4.0
80
8
2
4
1.2
4.5
200
6.0
150
10
3
4
0.4
3.7
200
6.0
400
40
1
2
−2.0
2.5
300
6.0
480
60
2
2
−2.7
1.2
300
6.0
500
78
3
2
−3.5
0.2
300
6.0
500
95
3
1
−3.5
0.0
450
6.0
500
95
3
1
−3.5
0.0
450
6.0
500
95
5
1
−3.5
0.0
450
6.0
500
95
5
1
−3.5
0.0
450
6.0
500
95
10
1
−3.5
0.0
450
6.0
500
83
20
1
−3.5
0.0
450
6.0
Maximum differential
resistance r
dif
(Ω)
Reverse
current I
R
(μA)
Temperature
coefficient
S
Z
(mV/K);
I
Z
= 5 mA
Min
−3.5
Max
0.0
Diode
capacitance
C
d
(pF)
[1]
Max
450
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
Max
6.0
I
Z
= 1 mA
400
I
Z
= 5 mA
85
Max
50
V
R
(V)
1
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
4 of 13
NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
Table 8.
Characteristics per type; BZT52H-B2V4 to BZT52H-C24
…continued
T
j
= 25
°
C unless otherwise specified.
BZT52H Sel
-xxx
Working
voltage
V
Z
(V);
I
Z
= 5 mA
Min
9V1
10
11
12
13
15
16
18
20
22
24
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
[1]
[2]
Maximum differential
resistance r
dif
(Ω)
Reverse
current I
R
(μA)
Temperature
coefficient
S
Z
(mV/K);
I
Z
= 5 mA
Min
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
Max
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Diode
capacitance
C
d
(pF)
[1]
Max
150
90
85
85
80
75
75
70
60
60
55
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
Max
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
Max
9.28
9.6
10.2
10.6
11.2
11.6
12.2
12.7
13.3
14.1
15.3
15.6
16.3
17.1
18.4
19.1
20.4
21.2
22.4
23.3
24.5
25.6
I
Z
= 1 mA
100
70
70
90
110
110
170
170
220
220
220
I
Z
= 5 mA
10
10
10
10
10
15
20
20
20
25
30
Max
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
V
R
(V)
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
8.92
8.5
9.8
9.4
10.8
10.4
11.8
11.4
12.7
12.4
14.7
13.8
15.7
15.3
17.6
16.8
19.6
18.8
21.6
20.8
23.5
22.8
f = 1 MHz; V
R
= 0 V.
t
p
= 100
μs;
T
amb
= 25
°C.
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 7 December 2010
5 of 13
传感器
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