MBR20H200CT, MBRF20H200CT & SB20H200CT-1
TO-220AB
ITO-220AB
FEATURES
• Guarding for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
1
2
3
1
2
3
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling and
polarity protection applications.
MBR20H200CT
TO-262AA
MBRF20H200CT
1
2
3
SB20H200CT-1
PIN 1
PIN 3
PIN 2
CASE
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Mounting Torque:
10 in-lbs maximum
Polarity:
As marked
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
2 x 10 A
200 V
290 A
0.75 V
175 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
E
RSM
E
AS
V
C
dV/dt
T
J
, T
STG
V
AC
MBR20H200CT
200
200
200
20
10
290
1.0
20
20
25
10 000
- 65 to + 175
1500
UNIT
V
V
V
A
A
A
mJ
mJ
kV
V/µs
°C
V
www.kersemi.com
1
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
Peak repetitive reverse current per diode at t
p
= 2 µs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)
Non-repetitive avalanche energy per diode at 25 °C, I
AS
= 2.0 A, L = 10 mH
Electrostatic discharge capacitor voltage
human body model air discharge: C = 100 pF, R 0 1.5 kΩ
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 minute
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage per diode
(1)
TEST
I
F
= 10 A
I
F
= 10 A
I
F
= 20 A
I
F
= 20 A
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
4.0 V, 1 MHz
SYMBOL
TYP.
0.81
0.65
0.87
0.74
5.0
1.0
250
MAX.
0.88
0.75
0.97
0.85
UNIT
V
F
V
Maximum reverse current per
diode at working peak reverse
voltage
(1)
Typical junction capacitance
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
I
R
C
J
µA
mA
pF
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
θJC
MBR
2.0
MBRF
4.0
SB
2.0
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-262AA
PREFERRED P/N
MBR20H200CT-E3/45
MBRF20H200CT-E3/45
SB20H200CT-1E3/45
UNIT WEIGHT (g)
2.06
2.20
1.58
PACKAGE CODE
45
45
45
BASE QUANTITY
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
25
MBR, MBRB
350
325
300
275
250
225
200
175
150
125
100
75
50
25
0
1
10
100
Average Forward Current (A)
20
MBRF
15
10
5
0
25
50
75
100
125
150
175
Case Temperature (°C)
Average Forward Current (A)
Number
of Cycles at 60 Hz
Figure 1. Forward Derating Curve (Total)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.kersemi.com
2
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
100
10 000
Instantaneous Forward Current (A)
10
T
J
= 125 °C
T
J
= 75 °C
1
T
J
= 25 °C
Junction Capacitance (pF)
1.1
T
J
= 175 °C
1000
100
0.1
0.1
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10 000
T
J
= 175 °C
100
1000
100
T
J
= 125 °C
T
J
= 75 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10
MBRF
10
1
T
J
= 25 °C
1
MBR, MBRB
0.1
0.01
10
20
30
40
50
60
70
80
90
100
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
www.kersemi.com
3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
