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BZB84 series
Dual Zener diodes
Rev. 03 — 9 June 2009
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I
Non-repetitive peak reverse power
dissipation:
≤
40 W
I
Total power dissipation:
≤
300 mW
I
Two tolerance series:
B =
±2
% and C =
±5
%
I
Wide working voltage range:
nominal 2.4 V to 75 V (E24 range)
I
Small plastic package suitable for
surface-mounted design
I
Dual common anode configuration
I
AEC-Q101 qualified
1.3 Applications
I
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
Per diode
V
F
P
ZSM
[1]
[2]
Quick reference data
Parameter
forward voltage
non-repetitive peak reverse
power dissipation
Conditions
I
F
= 10 mA
[1]
[2]
Min
-
-
Typ
-
-
Max
0.9
40
Unit
V
W
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
NXP Semiconductors
BZB84 series
Dual Zener diodes
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
cathode (diode 1)
cathode (diode 2)
common anode
1
2
3
3
Simplified outline
Graphic symbol
1
2
006aaa154
3. Ordering information
Table 3.
Ordering information
Package
Name
BZB84-B2V4 to
BZB84-C75
[1]
[1]
Type number
Description
plastic surface-mounted package; 3 leads
Version
SOT23
-
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Marking code
[1]
V9*
VA*
VB*
VC*
VD*
VE*
VF*
VG*
VH*
VK*
VL*
VM*
VN*
VP*
VR*
Type number
BZB84-C2V4
BZB84-C2V7
BZB84-C3V0
BZB84-C3V3
BZB84-C3V6
BZB84-C3V9
BZB84-C4V3
BZB84-C4V7
BZB84-C5V1
BZB84-C5V6
BZB84-C6V2
BZB84-C6V8
BZB84-C7V5
BZB84-C8V2
BZB84-C9V1
Marking code
[1]
U9*
UA*
UB*
UC*
UD*
UE*
UF*
UG*
UH*
UK*
UL*
UM*
UN*
UP*
UR*
Type number
BZB84-B2V4
BZB84-B2V7
BZB84-B3V0
BZB84-B3V3
BZB84-B3V6
BZB84-B3V9
BZB84-B4V3
BZB84-B4V7
BZB84-B5V1
BZB84-B5V6
BZB84-B6V2
BZB84-B6V8
BZB84-B7V5
BZB84-B8V2
BZB84-B9V1
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
2 of 14
NXP Semiconductors
BZB84 series
Dual Zener diodes
Marking codes
…continued
Marking code
[1]
VS*
VT*
VU*
VV*
VW*
PT*
PU*
RP*
PV*
PW*
PX*
PY*
PZ*
RA*
RB*
RC*
RD*
RE*
RF*
RG*
RH*
RJ*
Type number
BZB84-C10
BZB84-C11
BZB84-C12
BZB84-C13
BZB84-C15
BZB84-C16
BZB84-C18
BZB84-C20
BZB84-C22
BZB84-C24
BZB84-C27
BZB84-C30
BZB84-C33
BZB84-C36
BZB84-C39
BZB84-C43
BZB84-C47
BZB84-C51
BZB84-C56
BZB84-C62
BZB84-C68
BZB84-C75
Marking code
[1]
US*
UT*
UU*
UV*
UW*
PB*
PC*
RQ*
PD*
PE*
PF*
PG*
PH*
PJ*
PK*
PL*
PM*
PN*
PP*
PQ*
PR*
PS*
Table 4.
Type number
BZB84-B10
BZB84-B11
BZB84-B12
BZB84-B13
BZB84-B15
BZB84-B16
BZB84-B18
BZB84-B20
BZB84-B22
BZB84-B24
BZB84-B27
BZB84-B30
BZB84-B33
BZB84-B36
BZB84-B39
BZB84-B43
BZB84-B47
BZB84-B51
BZB84-B56
BZB84-B62
BZB84-B68
BZB84-B75
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
I
F
I
ZSM
forward current
non-repetitive peak
reverse current
non-repetitive peak
reverse power dissipation
[1]
Parameter
Conditions
Min
-
-
Max
200
see
Table 8, 9,
10
and
11
40
Unit
mA
P
ZSM
[1]
-
W
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
3 of 14
NXP Semiconductors
BZB84 series
Dual Zener diodes
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
amb
≤
25
°C
[2]
Min
-
-
−55
−65
Max
300
150
+150
+150
Unit
mW
°C
°C
°C
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
417
100
Unit
K/W
K/W
Per device; single diode loaded
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Soldering points at pins 1 and 2.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
[1]
Parameter
forward voltage
Conditions
I
F
= 10 mA
[1]
Min
-
Typ
-
Max
0.9
Unit
V
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
BZB84_SER_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 9 June 2009
4 of 14
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