DATA SHEET
COMPOUND TRANSISTOR
HR1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
• Up to 2A high current drives such as IC outputs and actuators
available
• On-chip bias resistor
• Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
HR1 SERIES LISTS
Products
HR1A3M
HR1F3P
HR1L3N
HR1A4,
HR1L2Q
HR1F2Q
HR1A4A
Marking
MP
MQ
MR
MS
MT
MU
MX
R
1
(KΩ)
1.0
2.2
4.7
10
0.47
0.22
−
R
2
(KΩ)
1.0
10
10
10
4.7
2.2
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
**
T
j
T
stg
Ratings
−60
−60
−10
−1.0
−2.0
−0.02
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
°C
°C
* PW
≤
10 ms, duty cycle
≤
50 %
** When 0.7 mm
×
16 cm ceramic board is used
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16184EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
HR1 SERIES
+5$0
(/(&75,&$/ &+$5$&7(5,67,&6 7D
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
°
Conditions
MIN.
TYP.
MAX.
−100
50
100
50
−0.4
−0.3
0.7
0.7
1.0
1.0
1.3
1.3
Unit
nA
−
−
−
V
V
kΩ
kΩ
V
CB
=
−60
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
IN
=
−5.0
V, I
C
=
−0.4
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
3:
≤
µ
V GXW\ F\FOH
≤
+5)3
(/(&75,&$/ &+$5$&7(5,67,&6 7D
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
°
Conditions
MIN.
TYP.
MAX.
−100
150
100
50
−0.3
−0.3
1.54
7
2.2
10
2.86
13
Unit
nA
−
−
−
V
V
kΩ
kΩ
V
CB
=
−60
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
IN
=
−5.0
V, I
C
=
−0.3
A
V
CE
= –5.0 V, I
C
=
−100
µ
A
3:
≤
µ
V GXW\ F\FOH
≤
+5/1
(/(&75,&$/ &+$5$&7(5,67,&6 7D
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
°
Conditions
MIN.
TYP.
MAX.
−100
150
100
50
−0.3
−0.3
3.29
7
4.7
10
6.11
13
Unit
nA
−
−
−
V
V
kΩ
kΩ
V
CB
=
−60
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
IN
=
−5.0
V, I
C
=
−0.2
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
3:
≤
µ
V GXW\ F\FOH
≤
'DWD 6KHHW '(-9'6
HR1 SERIES
+5$0
(/(&75,&$/ &+$5$&7(5,67,&6 7D
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
°
Conditions
MIN.
TYP.
MAX.
−100
150
100
50
−0.2
−0.3
7
7
10
10
13
13
Unit
nA
−
−
−
V
V
kΩ
kΩ
V
CB
=
−60
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
IN
=
−5.0
V, I
C
=
−0.1
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
3:
≤
µ
V GXW\ F\FOH
≤
+5/4
(/(&75,&$/ &+$5$&7(5,67,&6 7D
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
°
Conditions
MIN.
TYP.
MAX.
−100
150
100
50
−0.55
−0.3
329
3.29
470
4.7
611
6.11
Unit
nA
−
−
−
V
V
Ω
kΩ
V
CB
=
−60
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
IN
=
−5.0
V, I
C
=
−0.5
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
3:
≤
µ
V GXW\ F\FOH
≤
+5)4
(/(&75,&$/ &+$5$&7(5,67,&6 7D
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Low level output voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
OL
**
V
IL
**
R
1
R
2
°
Conditions
MIN.
TYP.
MAX.
−100
100
100
50
−0.55
−0.3
154
1.54
220
2.2
286
2.86
Unit
nA
−
−
−
V
V
kΩ
kΩ
V
CB
=
−60
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
IN
=
−5.0
V, I
C
=
−0.5
A
V
CE
=
−5.0
V, I
C
=
−100
µ
A
3:
≤
µ
V GXW\ F\FOH
≤
'DWD 6KHHW '(-9'6
HR1 SERIES
+5$$
(/(&75,&$/ &+$5$&7(5,67,&6 7D
Parameter
Collector cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
Input resistance
E-to-B resistance
Symbol
I
CBO
h
FE1
**
h
FE2
**
h
FE3
**
V
CE(sat)
**
V
IL
**
R
1
R
2
°
Conditions
MIN.
TYP.
MAX.
−100
150
100
50
0.20
−0.3
−
7
−
10
0.35
−1.5
−
13
Unit
nA
−
−
−
V
V
Ω
kΩ
V
CB
=
−60
V, I
E
= 0
V
CE
=
−2.0
V, I
C
=
−0.1
A
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
I
C
=
−500
mA, I
B
=
−10
mA
V
CE
=
−5.0
V, I
C
=
−100
µ
A
3:
≤
µ
V GXW\ F\FOH
≤
'DWD 6KHHW '(-9'6
HR1 SERIES
7<3,&$/ &+$5$&7(5,67,&6 7
a
°
'DWD 6KHHW '(-9'6
嵌入式系统
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