MBR735 - MBR7150
TO-220AC
.185(4.70)
.175(4.44)
.412(10.5)
MAX
.113(2.87)
.103(2.62)
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
PIN1
.16(4.06)
.14(3.56)
.56(14.22)
.53(13.46)
.037(0.94)
.027(0.68)
2
.11(2.79)
.10(2.54)
.055(1.40)
.045(1.14)
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High
o
temperature soldering guaranteed:
260 C/10 seconds,0.25”(6.35mm)from case
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
Mechanical Data
Cases: JEDEC TO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
PIN 2
CASE
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol MBR MBR MBR MBR MBR MBR MBR
Units
Type Number
735 745 750 760 790 7100 7150
Maximum Recurrent Peak Reverse Voltage
35
45
50
60
90
100
150
V
V
RRM
24
31
35
42
63
70
105
V
Maximum RMS Voltage
V
RMS
V
DC
35
45
50
60
90
100
150
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
A
I
(AV)
7.5
See Fig. 1
Peak Repetitive Forward Current (Square Wave, 20KHz) at
o
Tc=105 C
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
I
F
=7.5A,Tc=25℃
I
F
=7.5A,Tc=125℃
I
F
=15A,Tc=25℃
I
F
=15A,Tc=125℃
Maximum Instantaneous Reverse Current @ Tc =25 C
at Rated DC Blocking Voltage (Note 1)
Voltage Rate of Change (Rated V
R
)
Typical Junction Capactance
Maximum Thermal Resistance, (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
Notes:
@ Tc=125 C
o
o
Maximum Ratings and Electrical Characteristics
I
FRM
I
FSM
I
RRM
V
F
I
R
dv/dt
Cj
360
1.0
－
0.57
0.84
0.72
0.75
0.65
－
－
15.0
150
0.5
0.92
0.82
－
－
0.95
0..92
－
－
A
A
A
V
mA
mA
V/uS
160
o
0.1
15.0
0.1
10
10,000
280
5.0
15.0
-65 to +150
-65 to +175
200
0.1
5.0
pF
C/W
o
o
R
θJC
R
θJA
T
J
T
STG
C
C
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plated.
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FIG.1- FORWARD CURRENT DERATING CURVE
10
175
RESISTIVE OR
INDUCTIVE LOAD
8
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
AVERAGE FORWARD CURRENT. (A)
150
125
100
6
4
75
2
MBR735-MBR745
MBR750-MBR7150
0
50
100
o
CASE TEMPERATURE. ( C)
150
50
0
25
1
10
NUMBER OF CYCLES AT 60Hz
100
40
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
FIG.4- TYPICAL REVERSE CHARACTERISTICS
MBR735-MBR745
MBR750-MBR7150
INSTANTANEOUS FORWARD CURRENT. (A)
10
Tj=125 C
0
10
Pulse Width=300 s
1% Duty Cycle
1
Tj=25
0
C
INSTANTANEOUS REVERSE CURRENT. (mA)
Tj=125
0
C
1
0.1
Tj=75
0
C
0.1
MBR735-MBR745
MBR750-MBR760
MBR790-MBR7150
0.01
Tj=25
0
C
0.01
0
0.1 0.2 0.3
0.4
0.5
0.6 0.7 0.8 0.9 1.0 1.1 1.2
FORWARD VOLTAGE. (V)
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
4,000
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS
100
1,000
TRANSIENT THERMAL IMPEDANCE. (
O
C/W)
100
JUNCTION CAPACITANCE.(pF)
10
1
100
MBR735-MBR745
MBR750 & MBR760
MBR790-MBR7150
1.0
10
REVERSE VOLTAGE. (V)
40
0.1
0.1
0.01
0.1
1
T, PULSE DURATION. (sec)
10
100
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