omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
MBR20150FCT
20 Amp High Voltage
Power Schottky
Features
Temperature Capability
•
High Junction
•
•
•
•
•
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Low Leakage Current
Marking:type number
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Barrier Rectifier
150Volts
Maximum Ratings
•
•
•
•
Operating J unction Temperature : 150°C
Storage Temperature: - 5 0°C to +150°C
Per d iode Thermal Resistance 2.2°C/W Junction to Case
Total Thermal Resistance 1.3°C/W Junction to Case
MCC
Catalog
Number
MBR 20150
FCT
Maximum
Recurrent
Peak Reverse
Voltage
150 V
Maximum
RMS
Voltage
105V
Maximum
DC
Blocking
Voltage
150 V
ITO-220AB
B
C
PIN
L
M
D
K
1
2
3
A
E
F
O
I
J
N
H H
G
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
MBR20150FCT
I
F(AV)
I
FSM
20 A
180A
T
C
= 155
°C
8.3ms, half
sine wave
PIN 1
PIN 3
PIN 2
MM
14.80
---
2.55
6.30
---
---
13.00
2.55
---
---
3.00
---
---
2.50
---
0.90
0.80
3.40
4.80
3.30
2.90
1.40
16.00
10.30
2.85
6.90
4.10
1.80
13.80
V
F
V
F
.92V
.75V
I
FM
= 10A
T
J
= 25°C
I
FM
= 10A
T
J
= 125°C
Maximum
Reverse Current At
Rated DC Blocking
Voltage
I
R
25
µ
A
5m A
T
J
= 25°C
T
J
= 125°C
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
INCHES
.583
.630
---
.406
.100
.112
.248
.272
---
.161
---
.071
.512
.543
.100
---
.035
---
.032
.118
.134
---
.189
---
.130
.098
.114
---
.055
www.kersemi.com
MBR20150FCT
Fig. 1:
Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
10
9
8
7
6
5
4
3
2
1
0
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
Fig. 2:
Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(av)(A)
12
10
Rth(j-a)=Rth(j-c)
δ
=1
8
6
Rth(j-a)=15°C/W
T
4
2
δ
=tp/T
T
IF(av) (A)
0
1
2
3
4
5
6
7
8
9
δ
=tp/T
tp
tp
Tamb(°C)
50
75
100
125
150
175
10 11 12
0
0
25
Fig. 3:
Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
IM(A)
150
125
100
Tc=50°C
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
0.4
0.2
δ
= 0.5
75
Tc=75°C
50
25
I
M
t
δ
= 0.2
δ
= 0.1
Tc=125°C
T
0
1E-3
δ
=0.5
t(s)
1E-2
1E-1
1E+0
Single pulse
tp(s)
1E-2
1E-1
0.0
1E-3
δ
=tp/T
tp
1E+0
Fig. 5:
Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 6:
Junction capacitance versus reverse voltage
applied (typical values, per diode).
IR(µA)
1E+5
Tj=175°C
C(pF)
1000
Tj=150°C
F=1MHz
Tj=25°C
1E+4
1E+3
1E+2
Tj=100°C
Tj=125°C
100
1E+1
1E+0
1E-1
0
25
50
Tj=25°C
VR(V)
75
100
125
150
VR(V)
10
1
2
5
10
20
50
100
200
www.kersemi.com
MBR20150FCT
Fig. 7:
Forward voltage drop versus forward
current (maximum values, per diode).
Fig. 8:
Thermal resistance junction to ambient versus
copper surface under tab (Epoxy printed circuit board,
copper thickness: 35µm) (STPS20150CG only).
Rth(j-a) (°C/W)
80
IFM(A)
100.0
Tj=125°C
Typical values
70
60
50
Tj=25°C
10.0
Tj=125°C
40
1.0
VFM(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
30
20
10
0
0
2
4
6
8
S(cm²)
10
12
14
16
18
20
www.kersemi.com
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
