omponents
21201 Itasca Street Chatsworth
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MBR20150CT
•
•
•
Features
High Junction Temperature Capability
Good Trade Off Between Leakage Cur-
rent And Forward Volage Drop
Low Leakage Current
20 Amp High Voltage
Power Schottky
Barrier Rectifier
150Volts
TO-220AB
B
C
K
E
PIN
1
3
•
•
•
•
Maximum Ratings
Operating J unction Temperature : 150°C
Storage Temperature: - 5 0
°C
to +150°C
Per d iode Thermal Resistance 2.2°C/W Junction to Case
Total Thermal Resistance 1.3°C/W Junction to Case
MCC
Catalog
Number
MBR 20150 CT
Maximum
Recurrent
Peak Reverse
Voltage
150 V
Maximum
RMS
Voltage
105V
Maximum
DC
Blocking
Voltage
150 V
L
M
D
A
F
G
I
J
N
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
MBR20150CT
I
F(AV)
I
FSM
20 A
180A
T
C
= 155
°C
8.3ms, half
sine wave
H H
PIN 1
PIN 3
PIN 2
CASE
A
B
C
D
E
F
G
H
I
J
K
L
M
N
INCHES
.600
.620
.393
.409
.104
.116
.244
.259
.356
.361
.137
.154
.551
.511
.094
.106
.024
.034
.019
.027
.147
.151
.173
.181
.048
.051
0.102t y p.
MM
15.25
15.75
10.00
10.40
2.65
2.95
6.20
6.60
9.05
9.15
3.50
3.93
13.00
14.00
2.40
2.70
0.61
0.88
0.49
0.70
3.75
3.85
4.40
4.60
1.23
1.32
2.6t yp .
V
F
V
F
.92V
.75V
I
FM
= 10A
T
J
= 25°C
I
FM
= 10A
T
J
= 125°C
Maximum
Reverse Current At
Rated DC Blocking
Voltage
I
R
25
µ
A
5m A
T
J
= 25°C
T
J
= 125°C
www.kersemi.com
MBR20150CT
Fig. 1:
Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
10
9
8
7
6
5
4
3
2
1
0
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
Fig. 2:
Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(av)(A)
12
10
Rth(j-a)=Rth(j-c)
δ
=1
8
6
Rth(j-a)=15°C/W
T
4
2
δ
=tp/T
T
IF(av) (A)
0
1
2
3
4
5
6
7
8
9
δ
=tp/T
tp
tp
Tamb(°C)
50
75
100
125
150
175
10 11 12
0
0
25
Fig. 3:
Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
IM(A)
150
125
100
Tc=50°C
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
0.4
0.2
δ
= 0.5
75
Tc=75°C
50
25
I
M
t
δ
= 0.2
δ
= 0.1
Tc=125°C
T
0
1E-3
δ
=0.5
t(s)
1E-2
1E-1
1E+0
Single pulse
tp(s)
1E-2
1E-1
0.0
1E-3
δ
=tp/T
tp
1E+0
Fig. 5:
Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 6:
Junction capacitance versus reverse voltage
applied (typical values, per diode).
IR(µA)
1E+5
Tj=175°C
C(pF)
1000
Tj=150°C
F=1MHz
Tj=25°C
1E+4
1E+3
1E+2
Tj=100°C
Tj=125°C
100
1E+1
1E+0
1E-1
0
25
50
Tj=25°C
VR(V)
75
100
125
150
VR(V)
10
1
2
5
10
20
50
100
200
www.kersemi.com
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