UNISONIC TECHNOLOGIES CO., LTD
12N25V
12A, 250V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
12N25V
is an N-channel mode power MOSFET using
UTC’ s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
12N25V
is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
FEATURES
* I
D
=12A
* V
DS
= 250V
* R
DS(ON)
<0.5Ω @ V
GS
=10V, I
D
=12A
* High switching speed
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Package
TO-220
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
12N25VL-TA3-T
12N25VG-TA3-T
12N25VL-TN3-R
12N25VG-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R502-917.B
12N25V
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-917.B
12N25V
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
Power MOSFET
RATINGS
UNIT
Drain-Source Voltage
250
V
Gate-Source Voltage
±20
V
Continuous (T
C
=25°C)
12
A
Drain Current
Pulsed (Note 2)
48
A
Single Pulsed Avalanche Energy
474
mJ
Peak Diode Recovery dv/dt
7.5
V/ns
TO-220
73
W
Power Dissipation
P
D
TO-252
83
W
Junction Temperature
T
J
+150
°C
Storage Temperature Range
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL DATA
PARAMETER
TO-220
TO-252
TO-220
TO-252
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
100
1.7
1.5
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
250
V
Drain-Source Leakage Current
I
DSS
V
DS
=250V, V
GS
=0V
1
µA
Forward
V
GS
=+20V, V
DS
=0V
+100 nA
Gate- Source Leakage Current
I
GSS
-100 nA
Reverse
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
1.0
2.5
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=12A
0.34 0.5
Ω
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
3000
pF
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
900
pF
Reverse Transfer Capacitance
C
RSS
400
6
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
14
ns
Rise Time
t
R
80
ns
V
DD
=200V, I
D
=12A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
90
ns
80
ns
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
12
A
Maximum Body-Diode Pulsed Current
I
SM
48
A
Drain-Source Diode Forward Voltage
V
SD
I
S
=12A, V
GS
=0V
1.4
V
Reverse Recovery Time
t
rr
210
ns
I
S
=12A, V
GS
=0V, dI
F
/dt=100A/μs
Reverse Recovery Charge
Q
rr
1.5
μC
Notes: 1. Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%.
2. Essentially independent of operating ambient temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-917.B
12N25V
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-917.B
12N25V
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R502-917.B
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