J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
High Power
Silicon
Controlled Rectifier
1300 Volts 235 A RMS
C180 Silicon Controlled Rectifier is designed for phase
control applications. This is an all-diffused Pic-Pac device, employing the
field-proven amplifying gate.
FEATURES:
I
C180
I
AMPLIFYING GATE
•
•
•
•
High di/dt Ratings
High dv/dt Capability with Selections Available
Excellent Surge and I
2
t Ratings Providing Easy Fusing
Rugged Hermetic Package with Long Creepage Path
MAXIMUM ALLOWABLE RATINGS
TYPE
REPETITIVE PEAK OFF-STATE
VOLTAGE, V
DRM
'
Tj - -40°C to -H25°C
REPETITIVE PEAK REVERSE
VOLTAGE, V
R R M
i
Tj = -40°C to +125°C
NON-REPETITIVE PEAK
REVERSE VOLTAGE, V
RSM
1
Tj = +125°C
C180A
C180B
C180C
C180D
C180E
C180M
C180S
C180N
C180T
C180P
C180PA
C180PB
C180PC
1
100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
1300
100 Volts
200
300
400
500
600
700
800
900
1000
1100
1200
1300
200 Volts
300
400
500
600
720
840
950
1075
1200
1325
1450
1550
Half sinewave waveform, 10 msec. max. pulse width.
RMS On-State Current, IT(RMS)
Average On-State Current, I
T
(AV) • • •
Peak One-Cycle Surge (Non-Repetitive) On-State Current, I
TSM
(60 Hz)
Peak One-Cycle Surge (Non-Repetitive) On-State Current, I
TSM
(50 Hz)
Critical Rate-of-Rise of On-State Current (Non-Repetitive)*
Critical Rate-of-Rise of On-State Current (Repetitive)*
I
2
t (for fusing), for times > 1.5 milliseconds
Peak Gate Power Dissipation, P
GM
Average Gate Power Dissipation, PG(AV)
Storage Temperature, T
stg
Operating Temperature, Tj
Stud Torque
'
Amperes (All Conduction Angles)
Depends on Conduction Angle (See Charts)
3500 Amperes
3200 Amperes
800 A/JUS
500 A/MS
32,000 (RMS Ampere)
2
Seconds
10 Watts
2 Watts
-40°C to +150°C
-40°C to +125°C
250 Lb.-In. (Min.) - 300 Lb.-In, (Max.)
28 N-m (Min.) - 34 N-m (Max.)
235
Quality Semi-Conductors
CHARACTERISTICS
TEST
SYMBOL
WIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
| C180
Tj = +25°C
=
V
RRM =
100 Volts Peak
200
300
400
500
600
700
800
900
1000
1100
1200
1300
Tj = -H25
C
C
VRRM =
100 Volts Peak
200
300
400
500
600
700
800
900
1000
1100
1200
1300
Junction-to-Case
Tj = +125°C, V
DRM
=
Rated
Using Linear
or Exponential Rising Waveform, Gate
Open Circuited. Exponential dv/dt = (.632)
V
DRM
=
V
DRM
Repetitive Peak Reverse
and Off-State Current
C180A
C180B
C180C
C180D
C180E
C180M
C180S
C180N
C180T
C180P
C180PA
C180PB
C180PC
Repetitive Peak Reverse
and Off-State Current
C180A
C180B
C180C
C180D
C180E
C180M
C180S
C180N
C180T
C180P
C180PA
C180PB
C180PC
Thermal Resistance
Critical Rate-of-Rise of
Off-State Voltage. (Higher
values may cause device
switching.)
Holding Current
Turn-On Delay Time
Gate Pulse Width
Necessary to Trigger
DC Gate Trigger Current
JDRM
and
JRRM
-
-
-
-
-
-
-
-
—
-
-
-
—
rnA
3
3
3
3
3
3
3
3
3
3
3
3
3
10
10
10
10
10
10
10
10
9
7
7
6
5
mA
15
15
15
15
15
15
15
15
15
12
11
10
8
.12
500
20
20
20
20
20
20
20
20
18
15
14
13
11
.14
!DRM
and
!RRM
-
-
-
-
-
-
-
-
-
-
-
—
-
R0jc
dv/dt
-
200
°C/Watt
V//isec
Higher minimum dv/dt selections available - consult factory.
IH
td
—
~"
75
1
8
500
mAdc
fj.se c
"
10
T
c
= +25°C, Anode Supply = 24 Vdc.
Initial On-State Current - 2.5 Amps.
T
c
= +25°C, IT = lOOAdc, V
DRM
= Rated
Gate Supply: 10 Volt Open Circuit, 25
Ohm, 0.1 /usec max. rise time.
T
c
= 25°C, Gate Supply: 20 Volt Open Cir-
cuit, 40 Ohm, .5
ftsec
rise time. IT = 1 Amp.
For High di/dt Capability, See Chart 7.
T
c
= +25°C, V
D
= 6 Vdc, R
L
= 3 Ohms
T
c
= -40°C, V
D
- 6 Vdc, R
L
= 3 Ohms
T
c
= -H25°C, V
D
* 6 Vdc, R
L
= 3 Ohms
T
c
= -40°C to +125°C, V
D
= 6 Vdc, R
L
=
3 Ohms
T
c
= -H25°C, V
D
= Rated, R
L
= 1000 Ohms
T
c
= +25 °C, I
TM
* 1500 Amps. Peak
Duty Cycle < 0.01%
"
JGT
-
-
-
—
0.15
/isec
mAdc
100
-
-
1.25
-
2.3
DC Gate Trigger Voltage
VGT
150
200
125
3.0
-
2.85
Vdc
Peak On-State Voltage
VTM
—
Volts
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