SMAJ530 & SMAJ550
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional polarity only
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
APPLICATION NOTES
• Respect thermal resistance (PCB Layout) - as the
temperature coefficient also contributes to the
clamping voltage
• Select minimum breakdown voltage, so you get
acceptable power dissipation and PCB tie point
temperature
• Devices with higher breakdown voltage will have a
shorter conduction time and will dissipate less
power
• Clamping voltage is influenced by internal resistance
- design approximation is 7 V per 100 mA slope
• Keep temperature of TVS lower than TOPSwitch
®
as a recommendation
• Maximum current is determined by the maximum
T
J
and can be higher than 300 mA
• Contact supplier for different clamping voltage/
current arrangements
• Minimum breakdown voltage can be customized for
other applications. Contact supplier
• TOPSwitch is a registered trademark of Power
Integrations, Inc.
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
V
BR
P
PPM
P
D
I
FSM
T
J
max.
530 V, 550 V
300 W
2.5 W
40 A
150 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Power dissipation on infinite heatsink
(3)
Peak pulse power dissipation
(1)(2)(4)
(Fig. 1)
Stand-off voltage
Operating junction and storage temperature range
P
D
P
PPM
V
WM
T
J
, T
STG
477
SYMBOL
SMAJ530
HD
2.5
300
495
SMAJ550
SB
W
W
V
°C
UNIT
- 55 to + 150
Notes:
(1) Non repetitive current pulse per Fig. 3 and derated above 25 °C per Fig. 2
(2) Mounted on 5.0 mm
2
copper pads to each terminal
(3) Lead temperature at T
L
= 75 °C
(4) Peak pulse power waveform is 10/1000 µs
Document Number: 88391
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
SMAJ530 & SMAJ550
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Minimum breakdown voltage
Max. clamping voltage
Maximum DC reverse leakage current
Typical temperature coefficient
Typical capacitance
(1)
Note:
(1) Measured at 1 MHz
TEST CONDITIONS
100 µA
400 mA, 10/1000 µs-waveform
V
WM
of V
BR
0V
200 V
C
J
C
J
SYMBOL
V
BR
V
C
I
D
SMAJ530
530
760
1.0
650
90
7.5
SMAJ550
550
UNIT
V
V
µA
mV/°C
pF
pF
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to lead
Typical thermal resistance, junction to ambient
(1)
Note:
(1) Mounted on minimum recommended pad layout
SYMBOL
R
θJL
R
θJA
SMAJ530
30
120
SMAJ550
UNIT
°C/W
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMAJ530-E3/61
SMAJ530-E3/5A
SMAJ530HE3/61
(1)
SMAJ530HE3/5A
(1)
Note:
(1) Automotive grade AEC Q101 qualified
UNIT WEIGHT (g)
0.064
0.064
0.064
0.064
PREFERRED PACKAGE CODE
61
5A
61
5A
BASE QUANTITY
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
Non-Repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
P
PPM
- Peak Pulse Power (kW)
75
50
1
25
0.1
0.1
µs
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
0
0
25
50
75
100
125
150
175
200
t
d
- Pulse
Width
(s)
T
J
- Initial Temperature (°C)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88391
Revision: 21-Oct-08
SMAJ530 & SMAJ550
Vishay General Semiconductor
150
I
PPM
- Peak Pulse Current, % I
RSM
t
r
= 10
µs
Peak
Value
I
PPM
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50 % of I
PPM
100
Half
Value
- I
PP
I
PPM
2
50
10/1000
µs Waveform
as defined
by
R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Figure 3. Pulse Waveform
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 88391
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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www.vishay.com
Vishay
Disclaimer
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Revision: 12-Mar-12
1
Document Number: 91000