Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AC (SMA)
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 43 V. Typical fast
response times are less than 1.0 picosecond from 0 V to Breakdown Voltage.
Bourns
®
Chip Diodes are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away.
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3)
Operating Temperature Range
Storage Temperature Range
1.
2.
3.
Minimum Peak Pulse Power Dissipation (TP = 1 ms)
(Note 1,2)
Symbol
P
PK
I
FSM
T
J
Value
600
40
-55 to +150
-55 to +150
Unit
Watts
Amps
°C
°C
T
STG
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
Mounted on 5.0 mm
2
(0.03 mm thick) copper pads to each terminal.
8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
Asia-Pacific:
Tel: +886-2 2562-4117 • Email: asiacus@bourns.com
EMEA:
Tel: +36 88 885 877 • Email: eurocus@bourns.com
The Americas:
Tel: +1-951 781-5500 • Email: americus@bourns.com
www.bourns.com
WARNING Cancer and Reproductive Harm -
www.P65Warnings.ca.gov
*RoHS Directive 2015/863, Mar 31, 2015 and Annex.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
2. Suffix ‘CA’ denotes a 5 % tolerance bidirectional device.
3. For bidirectional devices with a V
RWM
of 10 volts or less, the I
R
limit is double.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
SMA6J Transient Voltage Suppressor Diode Series
3312 - 2 mm SMD Trimming Potentiometer
Performance Graphs
Peak Pulse Power Derating Curve
Peak Pulse Power Derating in Percent of
Peak Power or Current
100
IFSM - Peak Forward Surge Current (A)
Maximum Non-Repetitive Surge Current
45
40
35
30
25
20
15
10
5
0
1
10
Number of Cycles at 60 Hz
100
75
50
25
0
0
25
50
75
100
125
150
TA - Ambient Temperature ( °C)
Pulse Waveform
TR=10 µs
100
IP - Peak Pulse Current (%)
Peak value (IRSM)
Half value=
Typical Junction Capacitance
10000
Bidirectional
v-0v
1000
Unidirectional
@ VR
Unidirectional
v-0v
50
TA=25 °C
TP
Pulse width (TP)
is defined as that point
where the peak current
decays to 50 % of IPSM.
10 x 1000 waveform
as defined by R.E.A.
CJ - Junction Capacitance (pF)
IRSM
2
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
Bidirectional
@ VR
0
0
1.0
2.0
T - Time (ms)
3.0
4.0
1
1
10
100
1000
VBR - Reverse Breakdown Voltage (V)
Pulse Rating Curve
10
Steady State Power Derating Curve
3.0
Steady State Power Dissipation (W)
2.5
2.0
1.5
1.0
0.5
0.0
PPPM - Peak Pulse Power (kW)
1.0
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
0
25
50
75
100
125
150
Td - Pulse Width (Seconds)
TL - Lead Temperature (°C)
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
SMA6J Transient
SMD Trimming Potentiometer
3312 - 2 mm
Voltage Suppressor Diode Series
Product Dimensions
A
A
Recommended Footprint
A
A
B
C
B
B
B
C
C
G
D
Dimension
A (Max.)
H
FC
E
D
B (Min.)
C (Min.)
Dimension
A
B
C
D
E
F
G
H
DIMENSIONS:
SMA
MM
(DO-214AC)
3.99
(INCHES)
- 4.50
(0.157 - 0.177)
2.54 - 2.79
E
(0.100 - 0.110)
1.25 - 1.65
(0.049 - 0.065)
MM
DIMENSIONS:
0.31
0.15 -
(INCHES)
(0.006 - 0.012)
4.93 - 5.28
(0.194 - 0.208)
0.203
MAX.
(0.008)
1.98 - 2.29
(0.078 - 0.090)
0.76 - 1.52
(0.030 - 0.060)
MM
(INCHES)
F
SMA (DO-214AC)
2.70
(0.106)
2.10
(0.083)
1.27
(0.050)
MM
(INCHES)
DIMENSIONS:
Physical Specifications
Case ...........................................Molded plastic per UL Class 94V-0
Polarity....................... Cathode band indicates unidirectional device
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
SMA6J Transient Voltage Suppressor Diode
CDDFN5-0504N - TVS/Steering Diode Array Series
Packaging Information
The product will be dispensed in tape and reel format (see diagram below).
P
0
P
1
d
Index Hole
E
T
120 °
F
W
D2
D1 D
B
P
Trailer
A
Device
C
Leader
End
.......
.......
10 pitches (min.)
.......
.......
.......
.......
.......
.......
10 pitches (min.)
Start
W1
DIMENSIONS:
MM
(INCHES)
Direction of Feed
Devices are packed as shown here in compliance with
EIA-481-C standard.
SMA (DO-214AC)
13-Inch Reel
2.90 ± 0.20
(0.114 ± 0.008)
5.50 ± 0.20
(0.217 ± 0.008)
2.26 ± 0.20
(0.089 ± 0.008)
1.50 ± 0.10
(0.061 ± 0.004)
330
(12.992)
50.0
MIN.
(1.969)
13.0 ± 0.20
(0.512 ± 0.008)
1.75 ± 0.10
(0.069 ± 0.004)
5.50 ± 0.05
(0.217 ± 0.002)
4.00 ± 0.10
(0.157 ± 0.004)
4.00 ± 0.10
(0.157 ± 0.004)
2.00 ± 0.05
(0.079 ± 0.002)
0.30 ± 0.10
(0.012 ± 0.004)
12.00 ± 0.30
(0.472 ± 0.012)
18.4
MAX.
(0.724)
5,000
Item
Carrier Width
Carrier Length
Carrier Depth
Sprocket Hole
Reel Outside Diameter
Reel Inner Diameter
Feed Hole Diameter
Sprocket Hole Position
Punch Hole Position
Punch Hole Pitch
Sprocket Hole Pitch
Embossment Center
Overall Tape Thickness
Tape Width
Reel Width
Quantity per Reel
Symbol
A
B
C
d
D
D1
D2
E
F
P
P0
P1
T
W
W1
--
10/19
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
主题：自备终端(BYOD)发展趋势;用员工自己的移动设备来控制对工作设施及设备的使用，会对信息安全产生怎样的影响;在不使公司有安全风险或不损害员工隐私的前提下，有哪些方式能安全地实现这样的设施及设备使用。 自备终端(Bring Your Own Device，简称BYOD)，即企业允许员工离职时保留自己的手机，这种做法正日益流行。如今智能手机功能也越来越多，我们不仅能用自己的手机访问电脑、网...[详细]
SMT贴片机是表面贴装技术（Surface Mount Technology）中的重要设备，它的性能状态对电子制造的质量和效率有着决定性的影响。因此，对SMT贴片机的主要指标性能进行定期检测非常重要。以下是一些主要的检测项目： 定位精度：定位精度是SMT贴片机的核心性能指标，它直接影响到贴片的准确性。通常，我们通过重复测量贴片机在X、Y轴上的移动误差来检测其定位精度。 贴片速度：贴片速度...[详细]
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
