MBR1670CT thru MBR16100CT
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
A
C(TAB)
A
C
A
C
A
A=Anode, C=Cathode, TAB=Cathode
V
RRM
V
70
80
90
100
V
RMS
V
49
56
63
70
V
DC
V
70
80
90
100
MBR1670CT
MBR1680CT
MBR1690CT
MBR16100CT
Symbol
I
(AV)
I
FSM
dv/dt
Characteristics
Maximum Average Forward Rectified Current
@T
C
=100
o
C
Maximum Ratings
16
125
10000
I
F
=8A
I
F
=8A
I
F
=16A
I
F
=16A
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
0.85
0.75
0.95
0.85
0.1
100
2.0
275
-55 to +150
-55 to +175
Unit
A
A
V/us
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated V
R
)
Maximum Forward
Voltage (Note 1)
V
F
V
I
R
R
OJC
C
J
T
J
T
STG
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
mA
o
C/W
pF
o
o
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
C
C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low V
F
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
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MBR1670CT thru MBR16100CT
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
20
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
0
1
2
5
10
20
50
100
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
16
12
8
4
RESISTIVE OR INDUCTIVE LOAD
0
20
40
60
80
100
120
140
160
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS
REVERSE CURRENT ,(mA)
10
10
1.0
T
J
= 125 C
0.1
T
J
= 75 C
1.0
0.01
T
J
= 25 C
0.001
0
20
40
60
80
100
120
140
0.1
0.1
0.2
0.3
0.4
0.5
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
T
J
= 25 C
PULSE WIDTH 300us
2% Duty cycle
0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
CAPACITANCE , (pF)
100
T
J
= 25 C, f= 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
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