EDO DRAM, 256KX16, 60ns, CMOS, PDSO40,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | LG Semicon Co Ltd |
| Reach Compliance Code | unknown |
| 访问模式 | FAST PAGE WITH EDO |
| 最长访问时间 | 60 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PDSO-J40 |
| JESD-609代码 | e0 |
| 内存密度 | 4194304 bit |
| 内存集成电路类型 | EDO DRAM |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 40 |
| 字数 | 262144 words |
| 字数代码 | 256000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 256KX16 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOJ |
| 封装等效代码 | SOJ40,.44 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 512 |
| 自我刷新 | YES |
| 最大待机电流 | 0.0002 A |
| 最大压摆率 | 0.13 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| GM71CS4263CLJ-60 | GM71C4263CJ-60 | GM71C4263CJ-80 | GM71CS4263CLJ-70 | GM71C4263CJ-70 | GM71CS4263CLJ-80 | |
|---|---|---|---|---|---|---|
| 描述 | EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, | EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, | EDO DRAM, 256KX16, 80ns, CMOS, PDSO40, | EDO DRAM, 256KX16, 70ns, CMOS, PDSO40, | EDO DRAM, 256KX16, 70ns, CMOS, PDSO40, | EDO DRAM, 256KX16, 80ns, CMOS, PDSO40, |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
| 访问模式 | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO |
| 最长访问时间 | 60 ns | 60 ns | 80 ns | 70 ns | 70 ns | 80 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PDSO-J40 | R-PDSO-J40 | R-PDSO-J40 | R-PDSO-J40 | R-PDSO-J40 | R-PDSO-J40 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bi |
| 内存集成电路类型 | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 40 | 40 | 40 | 40 | 40 | 40 |
| 字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| 字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 256KX16 | 256KX16 | 256KX16 | 256KX16 | 256KX16 | 256KX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOJ | SOJ | SOJ | SOJ | SOJ | SOJ |
| 封装等效代码 | SOJ40,.44 | SOJ40,.44 | SOJ40,.44 | SOJ40,.44 | SOJ40,.44 | SOJ40,.44 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 512 | 512 | 512 | 512 | 512 | 512 |
| 自我刷新 | YES | NO | NO | YES | NO | YES |
| 最大待机电流 | 0.0002 A | 0.001 A | 0.001 A | 0.0002 A | 0.001 A | 0.0002 A |
| 最大压摆率 | 0.13 mA | 0.13 mA | 0.11 mA | 0.12 mA | 0.12 mA | 0.11 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND | J BEND | J BEND | J BEND | J BEND | J BEND |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 厂商名称 | LG Semicon Co Ltd | LG Semicon Co Ltd | LG Semicon Co Ltd | - | - | LG Semicon Co Ltd |
| Base Number Matches | - | 1 | 1 | 1 | 1 | - |
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