Bulletin I2135 rev. D 03/99
SAFE
IR
Series
25TTS..FP
PHASE CONTROL SCR
TO-220 FULLPAK
Description/Features
The 25TTS..FP
SAFE
IR
series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125° C junction
temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Fully isolated package (V
INS
= 2500 V
RMS
)
UL E78996 approved
V
T
I
TSM
< 1.25V @ 16A
= 300A
V
RRM
800 to 1600V
Output Current in Typical Applications
Applications
Capacitive input filterT
A
= 55°C,T
J
= 125°C,
common heatsink of 1°C/W
Single-phase Bridge
18
Three-phase Bridge
22
Units
A
Major Ratings and Characteristics
Characteristics
I
T(AV)
Sinusoidal
waveform
I
RMS
V
RRM
/ V
DRM
I
TSM
V
T
dv/dt
di/dt
T
J
Package Outline
25TTS..FP Units
16
A
25
up to 1600
300
@ 16 A, T
J
= 25°C
1.25
500
150
- 40 to 125
A
V
A
V
V/µs
A/µs
°C
TO-220 FULLPAK
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1
25TTS..FP
SAFE
IR
Series
Bulletin I2135 rev. D 03/99
Voltage Ratings
V
RRM
, maximum
Part Number
peak reverse voltage
V
25TTS08FP
25TTS12FP
25TTS16FP
800
1200
1600
V
DRM
, maximum
peak direct voltage
V
800
1200
1600
I
RRM
/
I
DRM
125°C
mA
10
Absolute Maximum Ratings
Parameters
I
T(AV)
I
RMS
I
TSM
Max. Average On-state Current
Max. RMS On-state Current
Max.Peak One Cycle Non-Repetitive
Surge Current
I
2
t
Max. I
2
t for fusing
25TTS..FP Units
16
25
300
350
450
630
A
2
s
A
Conditions
@ T
C
= 85° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
A
2
√s
V
mΩ
V
mA
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
RRM
/ V
DRM
t = 0.1 to 10ms, no voltage reapplied
@ 16A, T
J
= 25°C
T
J
= 125°C
I
2
√t
V
TM
r
t
Max. I
2
√t
for fusing
Max. On-state Voltage Drop
On-state slope resistance
6300
1.25
12.0
1.0
0.5
10
Typ.
--
100
Max.
100
150
V
T(TO)
Threshold Voltage
I
RM
/I
DM
Max.Reverse and Direct
Leakage Current
I
H
Holding Current
Anode Supply = 6V, Resistive load, Initial I
T
=1A
mA
25TTS08FP, 25TTS12FP
25TTS16FP
mA
V/µs
A/µs
Anode Supply = 6V, Resistive load
I
L
Max. Latching Current
200
500
150
dv/dt Max. Rate of Rise of off-state Voltage
di/dt Max. Rate of Rise of turned-on Current
2
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25TTS..FP
SAFE
IR
Series
Bulletin I2135 rev. D 03/99
Triggering
Parameters
P
GM
Max. peak Gate Power
P
G(AV)
Max. average Gate Power
+ I
GM
Max. paek positive Gate Current
- V
GM
Max. paek negative Gate Voltage
I
GT
Max. required DC Gate Current
to trigger
25TTS..FP Units
8.0
2.0
1.5
10
60
45
20
A
V
mA
W
Conditions
Anode supply = 6V, resistive load, T
J
= - 10°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
V
GT
Max. required DC Gate Voltage
to trigger
2.5
2.0
1.0
V
Anode supply = 6V, resistive load, T
J
= - 10°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
T
J
= 125°C, V
DRM
= rated value
V
GD
I
GD
Max. DC Gate Voltage not to trigger
Max. DC Gate Current not to trigger
0.25
2.0
mA
T
J
= 125°C, V
DRM
= rated value
Switching
Parameters
t
gt
t
rr
t
q
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
25TTS..FP Units
0.9
4
110
µs
T
J
= 25°C
Conditions
T
J
= 125°C
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
25TTS..FP Units
- 40 to 125
- 40 to 125
1.5
62
1.5
2 (0.07)
Min.
Max.
6 (5)
12 (10)
g (oz.)
Kg-cm
(Ibf-in)
(94/V0)
°C/W
°C
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thCS
Typ. Thermal Resistance Case
to Heatsink
wt
T
Approximate Weight
Mounting Torque
DC operation
Mounting surface, smooth and greased
Case Style
TO-220 FULLPAK
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25TTS..FP
SAFE
IR
Series
Bulletin I2135 rev. D 03/99
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
120
110
100
90
80
70
0
5
10
15
20
Average On-state Current (A)
30°
60°
90°
120°
180°
Conduction Angle
130
120
110
Conduction Period
25TTS.. Series
R
thJC
(DC) = 1.5 °C/W
25TTS.. Series
R
thJC
(DC) = 1.5 °C/W
100
90
30°
80
70
0
5
10
15
20
25
30
Average On-state Current (A)
60°
90°
120°
180°
DC
Fig. 1 - Current Rating Characteristics
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
25
180°
120°
90°
60°
30°
RMS Limit
Fig. 2 - Current Rating Characteristics
35
30
25
20
RMS Limit
15
10
5
0
0
5
10
15
20
25
30
Average On-state Current (A)
Conduction Period
20
15
DC
180°
120°
90°
60°
30°
10
Conduction Angle
5
25TTS.. Series
T
J
= 125°C
25TTS.. Series
T
J
= 125°C
0
0
4
8
12
16
20
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
400
350
300
250
200
150
25TTS.. Series
100
0.01
Peak Half Sine Wave On-state Current (A)
350
300
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
250
200
25TTS.. Series
150
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
0.1
Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
4
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25TTS..FP
SAFE
IR
Series
Bulletin I2135 rev. D 03/99
1000
Instantaneous On-state Current (A)
100
T
J
= 25°C
10
T
J
= 125°C
25TTS.. Series
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
Transient T hermal Impedance Z
thJC
(°C/W)
10
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady State Value
(DC Operation)
0.1
Single Pulse
25TTS.. Series
0.01
0. 0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
100
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
10
TJ = -10 °C
TJ = 25 °C
TJ = 125 °C
1
(4)
(3)
(2)
(1)
VGD
IGD
0.1
0.001
0.01
25TTS.. Series
0.1
1
Frequency Limited by PG(AV)
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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