PHOTOTRANSISTOR
Industry Sta ndard
Single Channel
6 Pin DIP Optocoupler
DEVICE TYPES
Part No.
CTR % Min.
4N25
20
4N26
20
4N27
10
4N28
10
4N35
100
4N36
100
4N37
100
4N38
10
H11A1
50
H11A2
20
H11A3
20
H11A4
10
H11A5
30
Dimensions in Inches (mm)
Part No.
MCT2
MCT2E
MCT270
MCT271
MCT272
MCT273
MCT274
MCT275
MCT276
MCT277
CTR % Min.
20
20
50
45–90
75–150
125–250
225–400
70–90
15–60
100
3
.248 (6.30)
.256 (6.50)
4
2
1
pin one ID
Anode
1
Cathode
2
5
6
6
Base
5
Collector
4
Emitter
NC
3
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
.300 (7.62)
typ.
FEATURES
• Interfaces with Common Logic Families
• Input-output Coupling Capacitance < 0.5 pF
• Industry Standard Dual-in-line 6-pin Package
• Field Effect Stable by TRIOS
®
• 5300 V
RMS
Isolation Test Voltage
• Underwriters Laboratory File #E52744
•
V
VDE #0884 Approval Available with Option 1
D E
DESCRIPTION
This data sheet presents five families of Infineon Industry Standard
Single Channel Phototransistor Couplers. These families include the
4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/
A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/
277 devices.Each optocoupler consists of Gallium Arsenide infra-
red LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to comply
with a 5300 V
RMS
Isolation Test Voltage. This isolation performance
is accomplished through Infineon double molding isolation manu-
facturing process. Compliance to VDE 0884 partial discharge isola-
tion specification is available for these families by ordering option 1.
Phototransistor gain stability, in the presence of high isolation volt-
ages, is insured by incorporating a TRansparent lOn Shield
(TRIOS)
®
on the phototransistor substrate. These isolation pro-
cesses and the Infineon IS09001 Quality program results in the
highest isolation performance available for a commercial plastic
phototransistor optocoupler.
The devices are available in lead formed configuration suitable for
surface mounting and are available either on tape and reel, or in
standard tube shipping containers.
APPLICATIONS
• AC Mains Detection
• Reed Relay Driving
• Switch Mode Power Supply Feedback
• Telephone Ring Detection
• Logic Ground Isolation
• Logic Coupling with High Frequency Noise
Rejection
Notes:
Designing with data sheet is covered in Application Note 45.
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
1
March 27, 2000-00
Maximum Ratings
T
A
=25°C
Emitter
Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................ 60 mA
Surge Current (t
≤
10
µ
s)............................................................................... 2.5 A
Power Dissipation................................................................................... 100 mW
Detector
Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage ................................................................ 7.0 V
Collector Current ....................................................................................... 50 mA
Collector Current(t <1.0 ms).................................................................... 100 mA
Power Dissipation................................................................................... 150 mW
Package
Isolation Test Voltage.......................................................................... 5300 V
RMS
Creepage ..............................................................................................
≥
7.0 mm
Clearance .............................................................................................
≥
7.0 mm
Isolation Thickness between Emitter and Detector ...............................
≥
0.4 mm
Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C...............................................................................10
12
Ω
V
IO
=500 V,
T
A
=100
°
C............................................................................ 10
11
Ω
Storage Temperature................................................................ –55
°
C to +150
°
C
Operating Temperature ............................................................ –55°C to +100°C
Junction Temperature................................................................................ 100°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
≥1.5
mm) ...................................................... 260°C
4N25/26/27/28—Characteristics
T
A
=25
°
C
Emitter
Forward Voltage*
Reverse Current*
Capacitance
Detector
Breakdown Voltage*
Collector-Emitter
Emitter-Collector
Collector-Base
BV
CEO
BV
ECO
BV
CBO
—
—
30
7.0
70
—
—
—
—
—
—
5.0
10
2.0
6.0
—
—
—
50
100
20
—
nA
nA
pF
V
Symbol
Min.
—
—
—
Typ.
1.3
0.1
25
Max.
1.5
100
—
Unit
V
Condition
V
F
I
R
C
O
I
F
=50 mA
V
R
=3.0 V
V
R
=0
µ
A
pF
I
C
=1.0 mA
I
E
=100
µ
A
I
C
=100
µ
A
V
CE
=10 V, (base open)
V
CB
=10 V, (emitter open)
V
CE
=0
I
CEO
(dark)*
I
CBO
(dark)*
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio*
4N25/26/27
4N28
C
CE
4N25/26
4N27/28
CTR
20
10
50
30
—
—
—
—
—
0.5
2.0
—
—
—
—
—
0.5
—
—
—
%
V
CE
=10 V,
I
F
=10 mA
Isolation Voltage*
4N25
4N26/27
4N28
V
IO
2500
1500
500
V
Peak, 60 Hz
Saturation Voltage, Collector-Emitter
Resistance, Input to Output*
Coupling Capacitance
Rise and Fall Times
* Indicates JEDEC registered values
V
CE(sat)
R
IO
C
IO
t
r
,
t
f
—
100
—
—
V
G
Ω
pF
I
CE
=2.0 mA,
I
F
=50 mA
V
IO
=500 V
f=1.0 MHz
µ
s
I
F
=10 mA
V
CE
=10 V,
R
L
=100
Ω
Phototransistor, Industry Standard
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
2
March 27, 2000-00
4N35/36/37/38—Characteristics
T
A
=25
°
C
Emitter
Forward Voltage*
Reverse Current*
Capacitance
Detector
Breakdown Voltage, Collector-Emitter*
4N35/36/37
4N38
Breakdown Voltage, Emitter-Collector*
Breakdown Voltage, Collector-Base*
4N35/36/37
4N38
Leakage Current, Collector-Emitter*
4N35/36/37
4N38
Leakage Current, Collector-Emitter*
4N35/36/37
4N38
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio*
4N35/36/37
4N38
DC Current Transfer Ratio*
4N35/36/37
4N38
Resistance, Input to Output*
Coupling Capacitance
Switching Time*
* Indicates JEDEC registered value
Symbol
V
F
I
R
C
O
BV
CEO
BV
ECO
BV
CBO
I
CEO
I
CEO
C
CE
CTR
Min.
0.9
Typ.
1.3
0.1
25
Max.
1.5
1.7
10
—
Unit
V
Condition
I
F
=10 mA
I
F
=10 mA,
T
A
=–55
°
C
V
R
=6.0 V
V
R
=0, f=1.0 MHz
I
C
=1.0 mA
I
E
=100
µ
A
I
C
=100
µ
A,
I
B
=1.0
µ
A
V
CE
=10 V,
I
F
=0
V
CE
=60 V,
I
F
=0
V
CE
=30 V,
I
F
=0,
T
A
=100
°
C
V
CE
=60 V,
I
F
=0,
T
A
=100
°
C
V
CE
=0
V
CE
=10 V,
I
F
=10 mA,
V
CE
=1.0 V,
I
F
=20 mA
V
CE
=10 V,
I
F
=10 mA,
T
A
=–55 to 100
°
C
V
IO
=500 V
f=1.0 MHz
I
C
=2.0 mA,
R
L
=100
Ω,
V
CC
=10 V
µ
A
pF
30
80
7.0
70
80
—
—
—
—
—
—
—
—
—
—
5.0
—
—
6.0
6.0
—
—
—
—
—
50
50
500
—
—
V
V
V
—
nA
µA
pF
100
20
—
—
50
30
—
0.5
10
—
—
—
—
—
—
—
%
CTR
—
R
IO
C
IO
40
—
10
11
—
—
%
—
Ω
pF
µs
t
ON
,
t
OFF
H11A1 through H11A5—Characteristics
T
A
=25
°
C
Emitter
Forward Voltage
H11A1–H11A4
H11A5
Reverse Current
Capacitance
Detector
Breakdown Voltage, Collector-Emitter
Breakdown Voltage, Emitter-Collector
Breakdown Voltage, Collector-Base
Leakage Current, Collector-Emitter
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio
H11A1
H11A2/3
H11A4
H11A5
Saturation Voltage, Collector-Emitter
Capacitance, Input to Output
Switching Time
V
CE
sat
C
IO
CTR
50
20
10
30
—
—
—
—
—
—
—
—
0.5
3.0
—
—
—
—
0.4
—
—
V
pF
µs
I
CE
=0.5 mA,
I
F
=10 mA
—
%
BV
CEO
BV
ECO
BV
CBO
I
CEO
C
CE
30
7.0
70
—
—
—
—
—
5.0
6.0
—
—
—
50
—
V
V
V
nA
pF
I
R
C
0
Symbol
V
F
Min.
—
—
—
—
Typ.
1.1
1.1
—
50
Max.
1.5
1.7
10
—
Unit
V
Condition
I
F
=10 mA
V
R
=3.0 V
V
R
=0, f=1.0 MHz
I
C
=1.0 mA,
I
F
=0 mA
I
E
=100
µ
A,
I
F
=0 mA
µ
A
pF
I
C
=10
µ
A,
I
F
=0 mA
V
CE
=10 V,
I
F
=0 mA
V
CE
=0
V
CE
=10 V,
I
F
=10 mA
t
ON
,
t
OFF
I
C
=2.0 mA,
R
L
=100
Ω,
V
CE
=10 V
Phototransistor, Industry Standard
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
3
March 27, 2000-00
MCT2/MCT2E—Characteristics
T
A
=25°C
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Base
Leakage Current
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio
Capacitance, Input to Output
Resistance, Input to Output
Switching Time
CTR
C
IO
R
IO
20
—
—
—
60
0.5
100
3.0
—
—
—
—
%
pF
GΩ
µs
Collector-Emitter
Collector-Base
—
BV
CEO
BV
ECO
BV
CBO
I
CBO
I
CBO
C
CE
30
7.0
70
—
—
—
—
—
—
5.0
—
10
—
—
—
50
20
—
nA
—
pF
V
Symbol
V
F
I
R
C
O
Min.
—
—
—
Typ.
1.1
—
25
Max.
1.5
10
—
Unit
V
Condition
I
F
=20 mA
V
R
=3.0 V
V
R
=0, f=1.0 MHz
µ
A
pF
I
C
=1.0 mA,
I
F
=0 mA
I
E
=100
µ
A,
I
F
=0 mA
I
C
=10
µ
A,
I
F
=0 mA
V
CE
=10 V,
I
F
=0
V
CE
=0
V
CE
=10 V,
I
F
=10 mA
—
—
t
ON
,
t
OFF
I
C
=2.0 mA,
R
L
=100
Ω,
V
CE
=10 V
MCT270 through MCT277—Characteristics
T
A
=25°C
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Base
Leakage Current, Collector-Emitter
Package
DC Current Transfer Ratio
MCT270
MCT271
MCT272
MCT273
MCT274
MCT275
MCT276
MCT277
Current Transfer Ratio, Collector–Emitter
MCT271–276
MCT277
Collector–Emitter Saturation Voltage
Capacitance, Input to Output
Resistance, Input to Output
Switching Time
MCT270/272
MCT271
MCT273
MCT274
MCT275/277
MCT276
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
Symbol
V
F
I
R
C
O
BV
CEO
BV
ECO
BV
CBO
I
CEO
CTR
Min.
Typ.
Max.
1.5
10
Unit
V
Condition
—
—
—
30
7.0
70
—
—
25
I
F
=20 mA
V
R
=3.0 V
V
R
=0, f=1.0 MHz
I
C
=10
µ
A,
I
F
=0 mA
I
E
=10
µ
A,
I
F
=0 mA
µ
A
pF
—
—
—
—
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
10
12
—
—
—
—
—
—
V
—
nA
I
C
=10
µ
A,
I
F
=0 mA
V
CE
=10 V,
I
F
=0 mA
V
CE
=10 V,
I
F
=10 mA
—
50
45
75
125
225
70
15
100
—
90
150
250
400
210
60
—
—
—
0.4
—
—
10
7.0
20
25
15
3.5
%
CTR
CE
V
CE
sat
C
IO
R
IO
12.5
40
—
—
—
—
—
—
—
—
—
%
—
V
pF
Ω
µs
V
CE
=0.4 V,
I
F
=16 mA
I
CE
=2.0 mA,
I
F
=16 mA
—
V
IO
=500 VDC
I
C
=2.0 mA,
R
L
=100
Ω,
V
CE
=5.0 V
t
ON
,
t
OFF
Phototransistor, Industry Standard
4
March 27, 2000-00
Figure 9. Forward Voltage vs. Forward Current
1.4
V
F
- Forward Voltage - V
T
A
= –55°C
T
A
= 25°C
Figure 12. Normalized Non-saturated and Saturated
CTR,
T
A
=70°C vs. LED Current
1.5
NCTR - Normalized CTR
Normalized to:
Vce=10 V, I
F
=10 mA, T
A
=25°C
CTRce(sat) Vce=0.4 V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
.1
1.0
T
A
=70°C
T
A
= 85°C
0.5
NCTR(SAT)
NCTR
0.0
1
10
I
F
- Forward Current - mA
100
.1
1
10
I
F
- LED Current - mA
100
Figure 10. Normalized Non-saturated and Saturated
CTR,
T
A
=25°C vs. LED Current
1.5
Normalized to:
Vce=10 V, I
F
=10 mA, T
A
=25°C
CTRce(sat) Vce=0.4 V
Figure 13. Normalized Non-saturated and Saturated
CTR,
T
A
=85°C vs. LED Current
1.5
NCTR - Normalized CTR
Normalized to:
Vce=10 V, I
F
=10 mA, T
A
=25°C
CTRce(sat) Vce = 0.4 V
NCTR - Normlized CTR
1.0
T
A
=25°C
1.0
T
A
=85°C
0.5
NCTR(SAT)
NCTR
0.5
NCTR(SAT)
NCTR
0.0
0
1
10
I
F
- LED Current - mA
100
0.0
.1
1
10
I
F
- LED Current - mA
100
Figure 11. Normalized Non-saturated and Saturated
CTR,
T
A
=50°C vs. LED Current
1.5
NCTR - Normalized CTR
Normalized to:
Vce=10 V, I
F
=10 mA, T
A
=25°C
CTRce(sat) Vce=0.4 V
Figure 14. Collector-emitter Current vs. Temperature
and LED Current
35
Ice - Collector Current - mA
30
25
20
15
10
5
0
0
10
20
30
40
50
60
70°C
25°C
85°C
50°C
1.0
T
A
=50°C
0.5
NCTR(SAT)
NCTR
0.0
.1
1
10
I
F
- LED Current - mA
100
I
F
- LED Current - mA
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
Phototransistor, Industry Standard
5
March 27, 2000-00
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