Datasheet> 器件分类 > 分立半导体> 晶体管> CMLDM7002AGTR

CMLDM7002AGTR: 产品描述Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6; 产品类别分立半导体晶体管; 文件大小225KB，共2页; 制造商Central Semiconductor

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CMLDM7002AGTR概述

Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6

CMLDM7002AGTR规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Central Semiconductor
包装说明	PACKAGE-6
针数	6
Reach Compliance Code	not_compliant
ECCN代码	EAR99
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	60 V
最大漏极电流 (Abs) (ID)	0.28 A
最大漏极电流 (ID)	0.28 A
最大漏源导通电阻	2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	5 pF
JESD-30 代码	R-PDSO-F6
JESD-609代码	e0
元件数量	2
端子数量	6
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	0.35 W
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	FLAT
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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CMLDM7002A

CMLDM7002AG*

CMLDM7002AJ

SURFACE MOUNT PICOmini

DUAL N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

Central

Semiconductor Corp.

DESCRIPTION:

These CENTRAL SEMICONDUCTOR devices are dual

Enhancement-mode N-Channel Field Effect Transistors,

manufactured by the N-Channel DMOS Process, designed

for high speed pulsed amplifier and driver applications. The

CMLDM7002A utilizes the USA pinout configuration, while

the CMLDM7002AJ utilizes the Japanese pinout

configuration. These devices offer low rDS (ON) and low

VDS(ON).

MARKING CODES: CMLDM7002A:

CMLDM7002AG*:

CMLDM7002AJ:

SYMBOL

VDS

VDG

VGS

IDM

ISM

TJ, Tstg

280

1.5

350

300

150

-65 to +150

357

SOT-563 CASE

Device is

Halogen Free

by design

L02

C2G

02J

UNITS

°C

°C/W

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Maximum Pulsed Source Current

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

IGSSF, IGSSR

VGS=20V, VDS=0V

100

IDSS

VDS=60V, VGS=0V

1.0

IDSS

VDS=60V, VGS=0V, TJ=125°C

500

ID(ON)

VGS=10V, VDS

≥2.0V

DS(ON)

500

BVDSS

VGS=0V, ID=10μA

VGS(th)

VDS=VGS, ID=250μA

1.0

2.5

VDS(ON)

VGS=10V, ID=500mA

1.0

VDS(ON)

VGS=5.0V, ID=50mA

0.15

VGS=0V, IS=400mA

1.2

VSD

rDS(ON)

VGS=10V, ID=500mA

2.0

rDS(ON)

VGS=10V, ID=500mA, TJ=125°C

3.5

rDS(ON)

VGS=5.0V, ID=50mA

3.0

rDS(ON)

VGS=5.0V, ID=50mA, TJ=125°C

5.0

gFS

VDS

≥2V

DS(ON), ID=200mA

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm

UNITS

μA

R4 (8-January 2009)

CMLDM7002AGTR相似产品对比

	CMLDM7002AGTR	CMLDM7002AJTR	CMLDM7002AJBK	CMLDM7002ATR	CMLDM7002AGBK	CMLDM7002ABK
描述	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-563, 6 PIN	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-563, 6 PIN	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PACKAGE-6	Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
包装说明	PACKAGE-6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	PACKAGE-6	SMALL OUTLINE, R-PDSO-F6
针数	6	6	6	6	6	6
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	60 V	60 V	60 V	60 V	60 V	60 V
最大漏极电流 (Abs) (ID)	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A
最大漏极电流 (ID)	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A
最大漏源导通电阻	2 Ω	2 Ω	2 Ω	2 Ω	2 Ω	2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	5 pF	5 pF	5 pF	5 pF	5 pF	5 pF
JESD-30 代码	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6
JESD-609代码	e0	e0	e0	e0	e0	e0
元件数量	2	2	2	2	2	2
端子数量	6	6	6	6	6	6
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	AMPLIFIER	AMPLIFIER	AMPLIFIER	SWITCHING	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
峰值回流温度（摄氏度）	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
处于峰值回流温度下的最长时间	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

CMLDM7002AGTR

CMLDM7002AGTR概述

CMLDM7002AGTR规格参数

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CMLDM7002AGTR相似产品对比

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