Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | SAMSUNG(三星) |
Reach Compliance Code | compliant |
最长访问时间 | 5.4 ns |
最大时钟频率 (fCLK) | 133 MHz |
I/O 类型 | COMMON |
交错的突发长度 | 1,2,4,8 |
JESD-30 代码 | S-PBGA-B54 |
内存密度 | 134217728 bit |
内存集成电路类型 | SYNCHRONOUS DRAM |
内存宽度 | 16 |
端子数量 | 54 |
字数 | 8388608 words |
字数代码 | 8000000 |
最高工作温度 | 70 °C |
最低工作温度 | -25 °C |
组织 | 8MX16 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | FBGA |
封装等效代码 | BGA54,9X9,32 |
封装形状 | SQUARE |
封装形式 | GRID ARRAY, FINE PITCH |
电源 | 2.5 V |
认证状态 | Not Qualified |
刷新周期 | 4096 |
连续突发长度 | 1,2,4,8,FP |
最大待机电流 | 0.0005 A |
最大压摆率 | 0.155 mA |
标称供电电压 (Vsup) | 2.5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | OTHER |
端子形式 | BALL |
端子节距 | 0.8 mm |
端子位置 | BOTTOM |
K4M28163LF-BL75 | K4M28163LF-BC75 | K4M28163LF-BR1L | K4M28163LF-BC1H | K4M28163LF-BS75 | K4M28163LF-BN1L | K4M28163LF-RE1H | K4M28163LF-BC1L | K4M28163LF-BR1H | |
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描述 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54 | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54 | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54 | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54 | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54 | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54 | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 不符合 | 符合 | 符合 |
厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compli | compli |
最长访问时间 | 5.4 ns | 5.4 ns | 7 ns | 7 ns | 5.4 ns | 7 ns | 7 ns | 7 ns | 7 ns |
最大时钟频率 (fCLK) | 133 MHz | 133 MHz | 105 MHz | 105 MHz | 133 MHz | 105 MHz | 105 MHz | 105 MHz | 105 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
交错的突发长度 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
JESD-30 代码 | S-PBGA-B54 | S-PBGA-B54 | S-PBGA-B54 | S-PBGA-B54 | S-PBGA-B54 | S-PBGA-B54 | S-PBGA-B54 | S-PBGA-B54 | S-PBGA-B54 |
内存密度 | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bit | 134217728 bi | 134217728 bi |
内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
端子数量 | 54 | 54 | 54 | 54 | 54 | 54 | 54 | 54 | 54 |
字数 | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words |
字数代码 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 |
最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 85 °C | 85 °C | 85 °C | 70 °C | 70 °C |
最低工作温度 | -25 °C | -25 °C | -25 °C | -25 °C | -25 °C | -25 °C | -25 °C | -25 °C | -25 °C |
组织 | 8MX16 | 8MX16 | 8MX16 | 8MX16 | 8MX16 | 8MX16 | 8MX16 | 8MX16 | 8MX16 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | FBGA | FBGA | FBGA | FBGA | FBGA | FBGA | FBGA | FBGA | FBGA |
封装等效代码 | BGA54,9X9,32 | BGA54,9X9,32 | BGA54,9X9,32 | BGA54,9X9,32 | BGA54,9X9,32 | BGA54,9X9,32 | BGA54,9X9,32 | BGA54,9X9,32 | BGA54,9X9,32 |
封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
封装形式 | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH |
电源 | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 |
连续突发长度 | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
最大待机电流 | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A |
最大压摆率 | 0.155 mA | 0.155 mA | 0.14 mA | 0.15 mA | 0.155 mA | 0.14 mA | 0.15 mA | 0.14 mA | 0.15 mA |
标称供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
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