SK32B - SK310B
3A Surface Mount Schottky Barrier Rectifier
Voltage range 20-100 Volts
Features
For surface-mount applications
Metal-to-silicon rectifier, majority-carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carries Underwriters
Laboratory Classification 94V-O
Epitaxial construction
High temperature soldering:
260
o
C / 10 seconds at terminals
.082(2.08)
.076(1.93)
SMB/DO-214AA
.147(3.73)
.137(3.48)
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing:
Shipped on16mm
tape per EIA STD RS-481
Weight: 0.1 gram
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
.056(1.41)
.035(0.90)
.208(5.28)
.200(5.08)
.008(.20)
.004(.10)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single-phase, half-wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol SK
SK
SK
SK
Parameter
Maximum Recurrent Peak Reverse
Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current at T
L
(See Fig. 1)
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on
Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 3.0A
Maximum DC Reverse Current (Note 1)
@ T
A
=25°C at Rated DC Blocking Voltage
@ T
A
=100°C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
32B
20
14
20
33B
30
21
30
34B
40
28
40
35B
50
35
50
3.0
SK
36B
60
42
60
SK
SK
Units
39B 310B
90
100
V
63
90
70
100
V
V
A
150
A
V
mA
mA
°C/W
°C/W
°C
°C
100
0.5
0.5
20
10.0
17
75
-55 to +125
0.75
0.85
0.6
20.0
Typical Thermal Resistance ( Note 2 )
R
thjl
R
thja
Operating Temperature Range
Storage Temperature Range
T
J
T
STG
-55 to +150
-55 to +150
Notes: 1. Pulse test with PW=300 usec, 1% duty cycle
2. Measured on pc board with 0.27" x 0.27”(7.0mm x 7.0mm) copper pad areas.
8/26/2004 Rev.1.01
www.SiliconStandard.com
1 of 2
SK32B - SK310B
RATINGS AND CHARACTERISTICS (SK32B
through
SK310B)
FIG. 1- MAXIMUM FORWARD CURRENT DERATING
CURVE
3.0
FIG. 2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
PEAK FORWARD SURGE CURRENT.(A)
AVERAGE FORWARD CURRENT.(A)
RESISTIVE OR
INDUCTIVELOAD
SK
120
AT RATED TL
8.3ms Single Half Sine Wave
JEDEC Method
2.0
35
SK
32
B-S
K3
4B
B -S
K3
10
B
90
SK
39B
1.0
60
-SK
310
B
SK32B
-SK36
B
30
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm)COPPER PAD AREAS
0
50
60
70
80
90
100 110 120
LEAD TEMP ERATURE.( C)
130
140
150
160
0
1
10
NUMBER OF CYCLES AT 60Hz
100
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
40
Tj=125 C
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
20
10
INSTANTANEOUS FORWARD CURRENT.(A)
10.0
INSTANTANEOUS REVERSE CURRENT.(mA)
TA=125 C
1.0
Tj=125 C
1.0
PULSE WIDTH=300 S
1% DUTY CYCLE
TA=75 C
0.1
Tj=25 C
0.1
0.01
TA=25 C
SK39B-SK310B
SK32B-SK34B
SK35B-SK36B
SK39B-SK310B
SK32B-SK34B
SK35B-SK36B
0.01
0
0.001
.2
.4
1.0
1.2
.6
.8
FORWARD VOLTAGE.(V)
1.4
1.5
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
FIG. 5- TYPICAL JUNCTION CAPACITANCE
TRANSCIENT THERMAL IMPEDANCE, C/W
1000
100
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
JUNCTION CAPACITANCE.(pF)
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
100
SK
32
B-S
K3
4B
SK
35
B-S
K3
6B
SK
39
B-S
K3
10
B
10.0
1
10
.1
1.0
REVERSE VOLTAGE.(V)
10
100
0.1
0.01
0.1
1
t, PULSE DURATION, (sec)
10
100
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
8/26/2004 Rev.1.01
www.SiliconStandard.com
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