HMC465
v05.0908
GaAs PHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 20 GHz
Typical Applications
Features
Gain: 17 dB
Output Voltage to 10Vpk-pk
Saturated Output Power: +24 dBm
Supply Voltage: +8V @160 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.63 x 0.1 mm
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
The HMC465 wideband driver is ideal for:
• OC192 LN/MZ Modulator Driver
• Telecom Infrastructure
• Test Instrumentation
• Military & Space
Functional Diagram
General Description
The HMC465 is a GaAs MMIC PHEMT Distributed
Driver Amplifier die which operates between DC and
20 GHz. The amplifier provides 17 dB of gain, 2.5 dB
noise figure and +24 dBm of saturated output power
while requiring only 160 mA from a +8V supply. Gain
flatness is excellent at ±0.25 dB as well as +/- 1 deg
deviation from linear phase from DC - 10 GHz making
the HMC465 ideal for OC192 fiber optic LN/MZ modu-
lator driver amplifier as well as test equipment appli-
cations. The HMC465 amplifier I/Os are internally
matched to 50 Ohms facilitating easy integration into
Multi-Chip-Modules (MCMs). All data is with the chip
in a 50 Ohm test fixture connected via 0.025 mm
(1 mil) diameter wire bonds of minimal length 0.31mm
(12 mils).
Electrical Specifi cations,
T
A
= +25° C, Vdd= 8V, Vgg2= 1.5V, Idd= 160 mA*
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Saturated Output Voltage
Group Delay Variation
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.6V Typ.)
19.5
15
Min.
Typ.
DC - 6.0
18
±0.5
0.015
3.0
18
18
22.5
24
33
10
±3
160
19
0.025
5.0
15
Max.
Min.
Typ.
6.0 - 12.0
17
±0.25
0.015
2.5
20
17
22
24
30
10
±3
160
17
0.025
3.5
13
Max.
Min.
Typ.
12.0 - 20.0
16.5
±0.5
0.02
3.0
16
17
20
22
26
8
±3
160
0.03
4.5
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
Vpk-pk
pSec
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 160 mA typical.
2 - 26
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC465
v05.0908
GaAs PHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 20 GHz
Gain & Return Loss
20
Gain vs. Temperature
20
2
+25C
+85C
-55C
10
RESPONSE (dB)
GAIN (dB)
S21
S11
S22
16
0
12
-10
8
-20
4
-30
0
4
8
12
16
20
24
FREQUENCY (GHz)
0
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
+25C
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
2
4
6
8
10
+85C
-55C
-10
-15
-20
-25
-30
+25C
+85C
-55C
12
14
16
18
20
22
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
FREQUENCY (GHz)
Low Frequency Gain & Return Loss
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
0.00001
Noise Figure vs. Temperature
8
7
RESPONSE (dB)
S21
S11
S22
NOISE FIGURE (dB)
6
5
4
3
2
1
0
+25C
+85C
-55C
0.0001
0.001
0.01
0.1
1
10
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 27
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
HMC465
v05.0908
GaAs PHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 20 GHz
Output P1dB vs. Temperature
Psat vs. Temperature
30
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
P1dB (dBm)
30
26
Psat (dBm)
26
22
22
+25C
+85C
-55C
18
+25C
+85C
-55C
18
14
14
10
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
10
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Output IP3 vs. Temperature
40
+25C
+85C
-55C
Gain, Power & Output IP3 vs.
Supply Voltage @ 10 GHz, Idd= 160mA
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
40
35
30
25
20
15
10
5
0
5.5
Gain
P1dB
Psat
IP3
36
IP3 (dBm)
32
28
24
20
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
6
6.5
7
7.5
8
8.5
Vdd SUPPLY VOLTAGE (V)
Group Delay
0
Deviation from Linear Phase
DEVIATION FROM LINEAR PHASE (deg)
5
-20
GROUP DELAY (pS)
3
-40
1
-60
-1
-80
-3
-100
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
-5
0
2
4
6
8
10
FREQUENCY (GHz)
2 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC465
v05.0908
GaAs PHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 20 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFIN)(Vdd = +8 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 24 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+9 Vdc
-2.0 to 0 Vdc
(Vdd -8) Vdc to Vdd
+23 dBm
175 °C
2.17 W
41.5 °C/W
-65 to +150 °C
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+7.5
+8.0
+8.5
Idd (mA)
161
160
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
2 - 29
159
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
GP-1
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC465
v05.0908
GaAs PHEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 20 GHz
Pad Descriptions
2
DRIVER & GAIN BLOCK AMPLIFIERS - CHIP
Pad Number
Function
Description
Interface Schematic
1
RFIN
This pad is DC coupled and matched to 50 Ohms.
2
Vgg2
Gate Control 2 for amplifier. +1.5V should be applied to
Vgg2 for nominal operation.
3
ACG1
Low frequency termination. Attach bypass capacitor
per application circuit herein.
4
ACG2
5
RFOUT & Vdd
RF output for amplifier. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
6
ACG3
Low frequency termination. Attach bypass capacitor
per application circuit herein.
7
ACG4
8
Vgg1
Gate Control 2 for amplifier.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
2 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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