DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
P
PC2715T
1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER
SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
FEATURES
• Low power consumption
• High power gain
• Input and output matching
• Super small package
: 15 mW (V
CC
= 3.4 V, I
CC
= 4.5 mA) TYP.
: 19 dB TYP. @ f = 0.5 GHz
: 50
:
: 6 pin mini mold
• Excellent frequency response : 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
ORDERING INFORMATION
PART NUMBER
PACKAGE
6 pin mini mold
SUPPLYING FORM
Embossed tape 12 mm wide.
Pin 1, 2, 3 face to perforation side of the tape.
P
PC2715T-E3
EQUIVALENT CIRCUIT
V
CC
OUT
(Top View)
PIN CONNECTIONS
(Bottom View)
3
2
1
C1L
IN
4
5
6
1. INPUT
2. GND
3. GND
4. OUTPUT
5. GND
6. V
CC
4
5
6
3
2
1
GND
Caution: Electro-static sensitive devices
Document No. P12432EJ2V0DS00 (2nd edition)
(Previous No. IC-2952)
Date Published March 1997 N
Printed in Japan
©
1993
P
PC2715T
ABSOLUTE MAXIMUM RATINGS (T
A
= +25 °C)
Supply Voltage
Total Circuit Current
Power Dissipation
Operating Temperature
Storage Temperature
Input Power
V
CC
I
CC
P
D
T
opt
T
stg
P
in
4.1
7.5
280*
ð40
to +85
ð55
to +150
0
V
mA
mW
°C
°C
dBm
*
Mounted on 50
u
50
u
1.6 mm epoxy glass PWD (T
A
= +85 °C)
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply Voltage
SYMBOL
V
CC
MIN.
3.06
TYP.
3.4
MAX.
3.74
UNIT
V
ELECTRICAL CHARACTERISTICS (T
A
= +25 °C, V
CC
= 3.4 V, Z
S
= Z
L
= 50
:
)
PARAMETER
Circuit Current
Power Gain
Maximum Output Level
Noise Figure
Upper Limit Operating Frequency
SYMBOL
I
CC
G
P
P
O(sat)
NF
f
U
0.9
MIN.
3.3
16
ð9
TYP.
4.5
19
ð6
4.5
1.2
6.0
MAX.
5.7
23
UNIT
mA
dB
dBm
dB
GHz
TEST CONDITIONS
No Signal
f = 0.5 GHz
f = 0.5 GHz, P
in
=
ð10
dBm
f = 0.5 GHz
3 dB down below flat gain
f = 0.1 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.1 to 0.6 GHz
Isolation
Input Return Loss
Output Return Loss
Gain Flatness
ISL
RL
in
RL
out
28
12
5
33
17
8
±1.0
dB
dB
dB
dB
'
G
P
2
P
PC2715T
TEST CIRCUIT
V
CC
1 000 pF
C
3
6
50
Ω
IN
1 000 pF
C
1
1
4
C
2
1 000 pF
50
Ω
OUT
2, 3, 5
EXAMPLE OF APPLICATION CIRCUIT
V
CC
1 000 pF
C
3
6
50
Ω
IN
1 000 pF
C
1
1
4
C
4
1 000 pF
C
5
1 000 pF
R
1
50 to 200
Ω
2, 3, 5
To stabilize operation,
please connect R
1
, C
5
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
1
6
4
C
2
1 000 pF
50
Ω
OUT
1 000 pF
C
6
2, 3, 5
Capacitors for V
CC
, input and output pins
1 000 pF capacitors are recommendable as bypass capacitor for V
CC
pin and coupling capacitors for input/output
pins.
Bypass capacitor for V
CC
pin is intended to minimize V
CC
pin’s ground impedance. Therefore, stable bias can be
supplied against V
CC
fluctuation.
Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC.
To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF
capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling
capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2
S
fZs).]
3
P
PC2715T
TYPICAL CHARACTERISTICS (T
A
=
ò
25 °C)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
10
9
10
V
CC
= 3.4 V
9
CIRCUIT CURRENT vs. OPERATING
TEMPERATURE
I
CC
– Circuit Current – mA
I
CC
– Circuit Current – mA
0.5
2
3
4
5
8
7
6
5
4
3
2
1
0
1
1.5
2.5
3.5
4.5
8
7
6
5
4
3
2
–40
–20
0
20
40
60
80
100
V
CC
– Supply Voltage – V
NOISE FIGURE AND INSERTION
POWER GAIN vs. FREQUENCY
25
30
V
CC
= 3.74 V
T
opt
– Operating Temperature –
°C
INSERTION POWER GAIN vs. FREQUENCY
V
CC
= 3.4 V
G
P
– Insertion Power Gain – dB
G
P
– Insertion Power Gain – dB
G
P
20
V
CC
= 3.4 V
15
6
25
T
A
= –40
°C
25
°C
NF – Noise Figure – dB
V
CC
= 3.06 V
V
CC
= 3.06 V
NF
20
85
°C
15
5
10
5
V
CC
= 3.4 V
V
CC
= 3.74 V
0.3
f – Frequency – GHz
1.0
2.0
10
4
0
0.1
5
0.1
0.3
f – Frequency – GHz
1.0
2.0
ISOLATION vs. FREQUENCY
0
V
CC
= 3.4 V
0
INPUT RETURN LOSS, OUTPUT
RETURN LOSS vs. FREQUENCY
V
CC
= 3.4 V
RL
in
– Input Return Loss – dB
RL
out
– Output Return Loss – dB
RL
in
–10
ISL – Isolation – dB
–10
–20
–20
RL
out
–30
–30
–40
0.1
0.3
f – Frequency – GHz
1.0
2.0
–40
0.1
0.3
f – Frequency – GHz
1.0
2.0
4
P
PC2715T
OUTPUT POWER vs. INPUT POWER
15
f = 0.5 GHz
10
10
V
CC
= 3.4 V
15
OUTPUT POWER vs. INPUT POWER
V
CC
= 3.4 V
f = 0.5 GHz
T
A
= 85
°C
T
A
= 25
°C
P
O
– Output Power – dBm
P
O
– Output Power – dBm
5
0
–5
–10
–15
–20
–25
3.74 V
5
0
–5
–10
–15
–20
–25
T
A
= –40
°C
3.06 V
T
A
= –40
°C
T
A
= 85
°C
–30
–50 –45 –40 –35 –30 –25 –20 –15 –10 –5
P
in
– Input Power – dBm
0
–30
–50 –45 –40 –35 –30 –25 –20 –15 –10 –5
P
in
– Input Power – dBm
0
5
P
O(sat)
– Saturated Output Power – dBm
P
in
= –10 dBm
0
V
CC
= 3.4 V
3.74 V
IM
3
– 3rd Order Intermodulation Distortion – dBc
SATURATED OUTPUT POWER vs.
FREQUENCY
THIRD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
–60
f
1
= 0.500 GHz
f
2
= 0.502 GHz
–50
–40
–30
–20
3.4 V
–10
0
–40
3.06 V
V
CC
= 3.74 V
–5
3.6 V
–10
–15
0.1
0.2
0.5
f – Frequency – GHz
1
2
–35
–30
–25
–20
–15
–10
–5
P
O(each)
– Output Power of Each Tone – dBm
5
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