Datasheet> 器件分类 > 存储> 存储> IDT71V416S15BE

文档预览

IDT71V416S15BE: 产品描述Standard SRAM, 256KX16, 15ns, CMOS, PBGA48, 9 X 9 MM, BGA-48; 产品类别存储存储; 文件大小99KB，共9页; 制造商IDT (Integrated Device Technology)

下载文档详细参数选型对比全文预览

IDT71V416S15BE概述

Standard SRAM, 256KX16, 15ns, CMOS, PBGA48, 9 X 9 MM, BGA-48

IDT71V416S15BE规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	BGA
包装说明	BGA, BGA48,6X8,30
针数	48
Reach Compliance Code	not_compliant
ECCN代码	3A991.B.2.A
最长访问时间	15 ns
I/O 类型	COMMON
JESD-30 代码	S-PBGA-B48
JESD-609代码	e0
长度	9 mm
内存密度	4194304 bit
内存集成电路类型	STANDARD SRAM
内存宽度	16
湿度敏感等级	4
功能数量	1
端子数量	48
字数	262144 words
字数代码	256000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	256KX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	BGA
封装等效代码	BGA48,6X8,30
封装形状	SQUARE
封装形式	GRID ARRAY
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
电源	3.3 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大待机电流	0.02 A
最小待机电流	3 V
最大压摆率	0.17 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn63Pb37)
端子形式	BALL
端子节距	0.75 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	20
宽度	9 mm

文档预览

下载PDF文档

全文
预览

3.3V CMOS Static RAM

4 Meg (256K x 16-Bit)

Features

256K x 16 advanced high-speed CMOS Static RAM

JEDEC Center Power / GND pinout for reduced noise.

Equal access and cycle times

– Commercial and Industrial: 10/12/15ns

One Chip Select plus one Output Enable pin

Bidirectional data inputs and outputs directly

LVTTL-compatible

Low power consumption via chip deselect

Upper and Lower Byte Enable Pins

Single 3.3V power supply

Available in 44-pin, 400 mil plastic SOJ package and a 44-

pin, 400 mil TSOP Type II package and a 48 ball grid array,

9mm x 9mm package.

IDT71V416S

IDT71V416L

Description

The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized

as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability

CMOS technology. This state-of-the-art technology, combined with inno-

vative circuit design techniques, provides a cost-effective solution for high-

speed memory needs.

The IDT71V416 has an output enable pin which operates as fast as

5ns, with address access times as fast as 10ns. All bidirectional inputs and

outputs of the IDT71V416 are LVTTL-compatible and operation is from a

single 3.3V supply. Fully static asynchronous circuitry is used, requiring

no clocks or refresh for operation.

The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a

44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x

9mm package.

Functional Block Diagram

Output

Enable

Buffer

A0 - A17

Address

Buffers

Row / Column

Decoders

Chip

Select

Buffer

Sense

Amps

and

Write

Drivers

High

Byte

Output

Buffer

High

Byte

Write

Buffer

I/O 15

I/O 8

4,194,304-bit

Memory

Array

Write

Enable

Buffer

Low

Byte

Output

Buffer

Low

Byte

Write

Buffer

I/O 7

I/O 0

BHE

Byte

Enable

Buffers

BLE

3624 drw 01

OCTOBER 2003

DSC-3624/08

IDT71V416S15BE相似产品对比

	IDT71V416S15BE	IDT71V416L15BE	IDT71V416L15BEI	IDT71V416S12BEI	IDT71V416S12BE	IDT71V416S15BEI	IDT71V416S10YI
描述	Standard SRAM, 256KX16, 15ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	Standard SRAM, 256KX16, 15ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	Standard SRAM, 256KX16, 15ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	Standard SRAM, 256KX16, 15ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	SOJ
包装说明	BGA, BGA48,6X8,30	TFBGA, BGA48,6X8,30	TFBGA, BGA48,6X8,30	TFBGA, BGA48,6X8,30	BGA, BGA48,6X8,30	TFBGA, BGA48,6X8,30	SOJ, SOJ44,.44
针数	48	48	48	48	48	48	44
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	15 ns	15 ns	15 ns	12 ns	12 ns	15 ns	10 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PBGA-B48	S-PBGA-B48	S-PBGA-B48	S-PBGA-B48	S-PBGA-B48	S-PBGA-B48	R-PDSO-J44
JESD-609代码	e0	e0	e0	e0	e0	e0	e0
长度	9 mm	9 mm	9 mm	9 mm	9 mm	9 mm	28.575 mm
内存密度	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	16	16	16	16	16	16	16
湿度敏感等级	4	4	4	4	4	4	3
功能数量	1	1	1	1	1	1	1
端子数量	48	48	48	48	48	48	44
字数	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
字数代码	256000	256000	256000	256000	256000	256000	256000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	85 °C	85 °C	70 °C	85 °C	85 °C
最低工作温度	-	-	-40 °C	-40 °C	-	-40 °C	-40 °C
组织	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16	256KX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	BGA	TFBGA	TFBGA	TFBGA	BGA	TFBGA	SOJ
封装等效代码	BGA48,6X8,30	BGA48,6X8,30	BGA48,6X8,30	BGA48,6X8,30	BGA48,6X8,30	BGA48,6X8,30	SOJ44,.44
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	RECTANGULAR
封装形式	GRID ARRAY	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	225	225	225	225	225	225
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	3.683 mm
最大待机电流	0.02 A	0.01 A	0.01 A	0.02 A	0.02 A	0.02 A	0.02 A
最小待机电流	3 V	3 V	3 V	3 V	3 V	3 V	3 V
最大压摆率	0.17 mA	0.16 mA	0.16 mA	0.18 mA	0.18 mA	0.17 mA	0.2 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn85Pb15)
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	J BEND
端子节距	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	0.75 mm	1.27 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	DUAL
处于峰值回流温度下的最长时间	20	20	20	20	20	20	30
宽度	9 mm	9 mm	9 mm	9 mm	9 mm	9 mm	10.16 mm

IDT71V416S15BE

IDT71V416S15BE概述

IDT71V416S15BE规格参数

文档预览

IDT71V416S15BE相似产品对比

推荐资源