3V, 450 MHz SILICON MMIC
FREQUENCY CONVERTER
FEATURES
•
LOW POWER DISSIPATION
V
CC
= 3 V, Icc = 7 mA
UPC2768GR
INTERNAL BLOCK DIAGRAM
•
HIGH CONVERSION GAIN
80 dB
GND
GND
RF INPUT
RF BYPASS
MIXER IF OUT
IF BYPASS
1
2
3
4
5
6
7
8
9
10
P/
S
20 GND
19 GND
18 LO
1
/VCO
1
17 LO
2
/VCO
2
16
15
14
13
12
VENABLE
V
CC
(D/C)
V
CC
(IF)
IF OUPUT
N/C
•
ON CHIP OSCILLATOR OR LO BUFFER:
DC - 450 MHz
•
OUTPUT LIMITING
450 mVp-p
•
BROADBAND OPERATION
DC - 450 MHz
•
POWER SAVE FUNCTION
I
CC
(ps) = <100
µA
DESCRIPTION
The UPC2768GR is a frequency converter manufactured with
the NESAT III process. This product consists of an RF input
amplifier, Gilbert cell mixer, Local Oscillator or LO buffer, IF
amplifier, external filter port, and IF output limiting amplifier.
The on-chip local oscillator only requires an external tank
circuit. The power save feature enables users to minimize
overall current consumption when dormant. This device was
specifically designed for low-cost second IF receivers, key-
less entry applications, security systems, GPS, and other low
power Part 15 mobile radios.
IF INPUT
BYPASS
N/C
GND
11 GND
ELECTRICAL CHARACTERISTICS
(V
CC
= 3.0 V, T
A
= 25°C, Z
L
= Z
S
= 50
Ω,
V
ENABLE
⊕
2.5 V unless otherwise specified)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
Down Converter
f
RF
,f
LO
CG
NF
Leak
LO-RF
Leak
LO-IF
G
S
V
OUT
P
SAT
PARAMETERS AND CONDITIONS
Circuit Current (V
ENABLE
≥
2.5
(V
ENABLE
≤
0.5 V)
Conversion
Gain
2
, f
RF
V)
4
UNITS
mA
µA
MHz
dB
dB
dBm
dBm
dB
dB
mVp-p
dBm
40
38
DC
33
36
12
-62
-25
44
42
450
-20
47
45
MIN
UPC2768GR
S20 (SSOP 20)
TYP
7
100
450
40
MAX
RF and LO Input Frequency Range (3 dB BW)
1
, f
IF
= 10 MHz
= 433 MHz, f
IF
= 25 MHz
Noise Figure
2
, f
RF
= 450 MHz, f
IF
= 10 MHz
LO to RF Leakage
3
, f
LO
= 1 to 450 MHz
LO to IF
Leakage
3
, f
LO
= 1 to 450 MHz
IF Amplifier Small Signal Gain f
IF
= 10.7 MHz
f
IF
= 25.0 MHz
Limiting Output Voltage, Z
L
= 2KΩ, f
IF
= 10 MHz
Saturated Output Power
IF Amplifier
Notes:
1. Max freq. range is -3 dB from conversion gain for R
F
= 50 MHz
2. Down converter only (RF
IN
to mixer IF
OUT
).
3. P
LO
= -10 dBm external, or using internal LO.
4. Down converter and IF amp may be operated separately.
Typical I
CC
for down converter is 5.5 mA (pin 15). Typical I
CC
for IF amp is 1.4 mA (pin 14).
California Eastern Laboratories
UPC2768GR
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CC
P
T
T
OP
T
STG
PARAMETERS
Supply Voltage
Power Dissipation
2
Operating Temperature
Storage Temperature
UNITS
V
mW
°C
°C
RATINGS
5
433
-40 to +85
-55 to +150
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
V
CC
T
OP
f
IF
PARAMETERS
Supply Voltage
Operating Temperature
IF Frequency Range
UNITS MIN
V
°C
MHz
2.7
-40
DC
TYP MAX
3.0
25
3.3
85
25
Note:
1. Operation in excess of any one of these parameters may
result in permanent damage.
2. Mounted on a 50x50x1.6 mm epoxy glass PWB (T
A
= 85°C).
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C, V
CC
= 3.0 V, V
ENABLE
≥
2.5 V unless otherwise specified)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
AND ENABLE VOLTAGE
(T
A
= 85
°
C)
V
CC
= 4.0 V
CIRCUIT CURRENT vs. SUPPPLY VOLTAGE
AND ENABLE VOLTAGE
V
CC
= 4.0
Circuit Current, I
CC
(mA)
Circuit Current, I
CC
(mA)
10.0
V
CC
= 3.3
V
CC
= 3.0
V
CC
= 2.7
5.0
10.0
V
CC=
3.3 V
V
CC
= 3.0 V
V
CC
= 2.7 V
5.0
0
0
1.0
2.0
3.0
4.0
0
0
1.0
2.0
3.0
4.0
Enable Voltage (V)
Enable Voltage (V)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
AND ENABLE VOLTAGE
(T
A
= 40
°
C)
10.0
CONVERSION GAIN vs.
RF FREQUENCY AND TEMPERATURE
(DOWN CONVERTER ONLY)
40
T
A
= 25˚C
T
A
= -40˚C
T
A
= 85˚C
Circuit Current, I
CC
(mA)
V
CC
= 4.0
V
CC
= 3.3
5.0
V
CC
= 3.0
V
CC
= 2.7
Conversion Gain (dB)
30
P
RF
= -70 dBm
P
LO
= -10 dBm
f
IF
= 10 MHz
20
0
0
0
1.0
2.0
3.0
4.0
0
100
200
300
400
500
600
Enable Voltage (V)
RF Frequency (MHz)
UPC2768GR
APPLICATION CIRCUIT
1
2
3
4
68 pF
3.3
µH
20
19
18
17
Bias
16
15
14
13
12
11
10.7 MHz
To Detector
33
25 pF
2
SAW
*
1
3
5
6
7
8
9
10
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
GND
GND
RF Input
RF Bypass
Mixer IF
IF Bypass
IF Input
Bypass
N/C
GND
20.
19.
18.
17.
16.
15.
14.
13.
12.
11.
GND
GND
Lo
1
/VCO
1
Lo
2
/VCO
2
V
ENABLE
V
CC (D/C)
V
CC (IF)
IF OUTPUT
N/C
GND
*
Recommended devices:
RF Monolithics RO2125A for 304 MHz
RF Monolithics RO2102A for 423 MHz
or equivalent
All unmarked caps are 1000 pF
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE SSOP 20
20
11
TYPICAL INPUT MATCHING CIRCUIT
3 pole high-pass network provides greater than 20 dB rejection in
the FM band (<100 MHz) and a VSWR of 1.5:1 at 315 MHz.
5.6pF
RF
200
4
82pF
3
NEC
C2768G
N
XXXXX
XXXX = Lot/Date Code
27nH
36pF
1
7.00 MAX
10
6.4±0.2
4.4±0.1
1.0±0.1
1.5
±0.1
1.8 MAX
0.1
±0.1
+0.10
0.22 - 0.05
+0.10
0.15- 0.05
0.5±0.2
0.65
0.575 MAX
ORDERING INFORMATION
PART NUMBER
QUANTITY
2500/Reel
UPC2768GR-E1
Lead Material: Alloy 42
Lead Plating: Lead Tin Alloy
LEAD CONNECTIONS:
1. GND
11. GND
2. GND
12. N/C
3. RF INPUT
13. IF OUTPUT
4. RF BYPASS 14. V
CC
(IF)
5. MIXER IF
15. V
CC
(D/C)
6. IF BYPASS
16. V
ENABLE
7. IF INPUT
17. L
O2/
VCO
2
8. BYPASS
18. L
O1/
VCO
1
9. N/C
19. GND
10. GND
20. GND
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
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