DATA SHEET
BiCMOS INTEGRATED CIRCUIT
µ
PC2807,2807A
PREAMPLIFIER FOR INFRARED REMOTE CONTROLLER
DESCRIPTION
The
µ
PC2807 and 2807A are semiconductors integrated circuit developed as preamplifiers for the receiver module of
infrared remote controllers. These preamplifiers can be directly connected to a PIN photodiode, and integrate a high-gain
first stage amplifier, limiter, bandpass filter, detector circuit, and waveform-shaping circuit on a single chip.
FEATURES
•
Only PIN photodiode required as an external component.
•
Following carrier frequencies (f
O
) selectable (five types):
µ
PC2807
: f
O
=
32.7, 36.0, 36.7, 37.9 kHz
µ
PC2807A : f
O
=
40.0 kHz
•
Fixed trap frequency
f
T
=
54 kHz
•
Active-low output
•
Supplied in form of wafer
APPLICATION
•
Receiver module of infrared remote controller
ORDERING INFORMATION
Part Number
Condition in shipment
Wafer
Wafer
µ
PC2807W
µ
PC2807AW
Contact an NEC sales representative in advance since a memorandum on product quality need to be prepared for
shipment in the form of wafer.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. S13198EJ1V0DS00 (1st edition)
Date Published May 2000 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
1998, 2000
µ
PC2807, 2807A
BLOCK DIAGRAM
V
CC
6
ABLC
First-stage
Limiter
amplifier amplifier
TRAP
BPF
Detector
PAD1
3
Waveform-shaping
circuit
22 kΩ
5
OUT
IN
9
I/V
Carrier
elimination
TRAP
skip
Trimming
circuit
f
O
setting
13
12
11
10
4
S3
2
S2
1
S1
8
7
PAD6
PAD4
PAD5
PAD3
GND2
GND1
2
Data Sheet S13198EJ1V0DS00
µ
PC2807, 2807A
PAD FUNCTION
Symbol
V
CC
Pad No.
6
Function
Power pad. Apply a voltage of 5 V
±
10 %. Connect an external smoothing filter if noise on power line
is high.
GND1
GND2
IN
OUT
7
8
9
5
GND pad (for output transistor)
GND pad (for circuits excluding output transistor)
Input pad. Internal impedance is 190 kΩ TYP. PIN photodiode can be directly connected.
Output pad. Open-collector output with pull-up resistor (22 kΩ TYP.) To connect pull-up resistor, use
resistor of 10 kΩ or higher.
S1
S2
S3
PAD1
1
2
4
3
BPF output pad. Parameters such as voltage gain and BPF bandwidth can be tested.
Do not connect this pad to anything on final assembly.
PAD3
PAD4
PAD5
PAD6
10
11
12
13
Test and trimming pads. Do not connect these pads to anything.
BPF center frequency setting pads.
Connect pad corresponding to carrier frequency to be used to GND
Note
.
Note
Connect each of BPF center frequency setting pads as follows depending on the carrier frequency.
•
µ
PC2807
Carrier Frequency
32.7 kHz
36.0 kHz
36.7 kHz
37.9 kHz
GND
GND
Leave unconnected.
Leave unconnected.
S1
S2
Leave unconnected.
GND
GND
Leave unconnected.
S3
Leave unconnected.
GND
GND
Leave unconnected.
•
µ
PC2807A
Carrier Frequency
40.0 kHz
S1
Leave unconnected.
S2
Leave unconnected.
S3
Leave unconnected.
Data Sheet S13198EJ1V0DS00
3
µ
PC2807, 2807A
ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings (T
A
= +
25
±
3
°
C)
Parameter
Supply voltage
Output sink current
Input voltage
Storage temperature
Symbol
V
CC
I
OSINK
V
IN
T
stg
Ratings
5.5
2.5
0 to V
CC
−40
to
+125
Unit
V
mA
V
°C
Caution
Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any
parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge
of suffering physical damage, and therefore the product must be used under conditions that ensure
that the absolute maximum ratings are not exceeded.
Recommended Operating Conditions (T
A
=
25
±
3
°
C)
Parameter
Supply voltage
Operating ambient temperature
Symbol
V
CC
T
A
Conditions
MIN.
4.5
−25
TYP.
5.0
+25
MAX.
5.5
+80
Unit
V
°C
4
Data Sheet S13198EJ1V0DS00
µ
PC2807, 2807A
Electrical Characteristics (T
A
= +
25
±
3
°
C, V
CC
=
5 V)
Parameter
Circuit current
Symbol
I
CC
Conditions
With no signal applied.
S1. S2, and S3: Leave unconnected.
Low-level output voltage 1
Low-level output voltage 2
High-level output voltage
Voltage gain 1
V
OL1
V
OL2
V
OH
A
v1
S1, S2, and S3: Leave unconnected.,
V
IN
=
30 dB
µ
V
A
v2
V
IN
=
30 dB
µ
V
f
BW
Note1
MIN.
1.1
TYP.
1.5
MAX.
1.9
Unit
mA
Without external pull-up resistor
With external 10-kΩ pull-up resistor connected
−
−
4.8
70
0.05
0.10
5.0
80
0.4
0.5
−
86
V
V
V
dB
µ
PC2807
Voltage gain 2
, f 37.9 kHz
72
82
88
dB
S1, S2, and S3: Leave unconnected.,
Note1
µ
PC2807A
BPF bandwidth
, f
=
40.0 kHz
1.5
3.0
4.5
kHz
Note1
−3
dB bandwidth. S1, S2, S3: Leave
unconnected., V
IN
=
30 dB
µ
V
Output pulse width 1
t
BW1
S1, S2, and S3: Leave unconnected.,
V
IN
=
500
µ
V
p-p
, f
=
37.9 kHz
Note3
400
600
800
µ
s
,
Note2
Burst length: 600
µ
s, Cycle: 1.2 ms
Average value of output from start of signal
input to 60th pulse
Output pulse width 2
t
PW2
S1, S2, and S3: Leave unconnected.,
V
IN
=
50 mV
p-p
, f
=
37.9 kHz
Note3
400
600
800
µ
s
,
Note2
Burst length: 600
µ
s, Cycle: 1.2 ms
Average value of output from start of signal
input to 60th pulse
Notes 1.
2.
30 dB
µ
V
=
31.6
µ
V
r.m.s.
Input the following burst signal.
37.9-kHz carrier
600
µ
s 600
µ
s 600
µ
s
3.
f
=
37.9 kHz for the
µ
PC2807. In the
µ
PC2807A, measurement is at f
=
40.0 kHz.
Data Sheet S13198EJ1V0DS00
5
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