Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN
| 参数名称 | 属性值 |
| 厂商名称 | SANYO |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | BUILT IN BIAS RESISTOR RATIO 1 |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 50 |
| JESD-30 代码 | R-PDSO-G3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 0.2 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 200 MHz |
| RA101C | RC101C | |
|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN |
| 厂商名称 | SANYO | SANYO |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| 针数 | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 |
| 其他特性 | BUILT IN BIAS RESISTOR RATIO 1 | BUILT IN BIAS RESISTOR RATIO 1 |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 50 | 50 |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | PNP | NPN |
| 最大功率耗散 (Abs) | 0.2 W | 0.2 W |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES |
| 端子形式 | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
| 标称过渡频率 (fT) | 200 MHz | 250 MHz |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
