Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | SAMSUNG(三星) |
| 零件包装代码 | SOJ |
| 包装说明 | SOJ, SOJ44,.44 |
| 针数 | 44 |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A991.B.2.B |
| 最长访问时间 | 12 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PDSO-J44 |
| JESD-609代码 | e0 |
| 长度 | 28.58 mm |
| 内存密度 | 1048576 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端子数量 | 44 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 64KX16 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOJ |
| 封装等效代码 | SOJ44,.44 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 3.76 mm |
| 最大待机电流 | 0.005 A |
| 最小待机电流 | 4.5 V |
| 最大压摆率 | 0.055 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 宽度 | 10.16 mm |
| K6R1016C1D-JC12 | K6R1016C1D-JI12 | K6R1016C1D-TI12 | K6R1016C1D-EI12 | K6R1016C1D-EC12 | K6R1016C1D-TC12 | |
|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44 | Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44 | Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | Standard SRAM, 64KX16, 12ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 | Standard SRAM, 64KX16, 12ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TBGA-48 | Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | SOJ | SOJ | TSOP2 | BGA | BGA | TSOP2 |
| 包装说明 | SOJ, SOJ44,.44 | SOJ, SOJ44,.44 | TSOP2, TSOP44,.46,32 | VFBGA, BGA48,6X8,30 | VFBGA, BGA48,6X8,30 | TSOP2, TSOP44,.46,32 |
| 针数 | 44 | 44 | 44 | 48 | 48 | 44 |
| Reach Compliance Code | unknown | unknown | unknown | compliant | compliant | unknown |
| ECCN代码 | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B |
| 最长访问时间 | 12 ns | 12 ns | 12 ns | 12 ns | 12 ns | 12 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PDSO-J44 | R-PDSO-J44 | R-PDSO-G44 | R-PBGA-B48 | R-PBGA-B48 | R-PDSO-G44 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 28.58 mm | 28.58 mm | 18.41 mm | 7 mm | 7 mm | 18.41 mm |
| 内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 44 | 44 | 44 | 48 | 48 | 44 |
| 字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 85 °C | 85 °C | 85 °C | 70 °C | 70 °C |
| 组织 | 64KX16 | 64KX16 | 64KX16 | 64KX16 | 64KX16 | 64KX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOJ | SOJ | TSOP2 | VFBGA | VFBGA | TSOP2 |
| 封装等效代码 | SOJ44,.44 | SOJ44,.44 | TSOP44,.46,32 | BGA48,6X8,30 | BGA48,6X8,30 | TSOP44,.46,32 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | SMALL OUTLINE, THIN PROFILE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 3.76 mm | 3.76 mm | 1.2 mm | 1 mm | 1 mm | 1.2 mm |
| 最大待机电流 | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A |
| 最小待机电流 | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 最大压摆率 | 0.055 mA | 0.065 mA | 0.065 mA | 0.065 mA | 0.055 mA | 0.055 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND | J BEND | GULL WING | BALL | BALL | GULL WING |
| 端子节距 | 1.27 mm | 1.27 mm | 0.8 mm | 0.75 mm | 0.75 mm | 0.8 mm |
| 端子位置 | DUAL | DUAL | DUAL | BOTTOM | BOTTOM | DUAL |
| 宽度 | 10.16 mm | 10.16 mm | 10.16 mm | 6 mm | 6 mm | 10.16 mm |
| 厂商名称 | SAMSUNG(三星) | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
