DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
PC8102T
RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM
DESCRIPTION
µ
PC8102T is a silicon monolisic integrated circuit designed as RF amplifier for 150 MHz to 330 MHz pager system.
Due to 1 V supply voltage, this IC is suitable for low voltage pager system. The package is a 6 pin mini mold suitable
for high-density surface mounting.
This IC is manufactured using NEC’s 20 GHz f
T
NESAT
TM
III silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials contribute excellent DC, AC performance. Thus, this
process is utilized for 1 V voltage IC.
FEATURES
• 1 V supply voltage: V
CC
= 0.9 V to 2.0 V
• Low noise figure: 2.3 dB
TYP.
@ f
in
= 150 MHz (with external matching circuit to optimize NF)
• Low current consumption: I
CC
= 0.5 mA
TYP.
@ V
CC
= 1.0 V
• Gain available frequency:
f
RF
= 150 MHz to 330 MHz (with external matching circuit)
• High-density surface mounting: 6 pin mini mold
ORDERING INFORMATION
PART NUMBER
PACKAGE
6 pin mini mold
MARKING
C2B
SUPPLYING FORM
Embossed tape 8 mm wide. Pin 1, 2, 3 face to
perforation side of tape. QTY 3 kp/Reel
µ
PC8102T-E3
*
For evaluation sample order, please contact your local NEC sales office.
(Order number:
µ
PC8102T).
PIN CONNECTIONS
(Top View)
3
2
1
(Bottom View)
4
5
6
4
5
6
3
2
1
1:
2:
3:
4:
5:
6:
INPUT
GND
OUTPUT
V
CC
C1
C2
C2B
Caution Electro-static sensitive devices
Document No. P11501EJ2V0DS00
(Previous No. ID-3534)
Date Published May 1996 P
Printed in Japan
©
1996
µ
PC8102T
INTERNAL BLOCK DIAGRAM
3
4
2
5
1
6
SYSTEM APPLICATION EXAMPLE AS PAGER
150 MHz to 330 MHz
µ
PC8102T
µ
PC8103T
BPF
BPF
IF
2
µ
PC8102T
PIN EXPLANATION
SUPPLY
PIN NO.
NAME
VOLTAGE
(V)
—
PIN VOLTAGE
(V)
0.75
FUNCTION AND APPLICATION
EQUIVALENT CIRCUIT
1
INPUT
RF signal input pin. This pin
should be externally equipped
with matching circuit in accord-
ance with desired frequency.
This ground pin must be
connected to the system ground
with minimum inductance.
Ground pattern on the board
should be formed as wide as
possible. Track length should
be kept as short as possible.
Amplified signal output pin.
This pin should be externally
equipped with matching circuit
in accordance with desired
frequency.
2
GND
0
—
3
1
3
OUTPUT C2 pin
voltage
must be
applied
through
external
matching
inductor
—
2
6
5
4
4
V
CC
0.9 to 2.0
—
Supply voltage pin. Connect
bypass capacitor (eg 1000 pF)
to minimize ground impedance.
Ground with capacitance pin (eg
1000 pF).
AC ground pin for output
5
C1
—
0.88
6
C2
—
0.85
Note
Pin voltage values are described at V
CC
= 1 V.
3
µ
PC8102T
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage
Power Dissipation
SYMBOL
V
CC
P
D
T
A
= +25 ˚C
Mounted on 50
×
50
×
1.6 mm double copper
clad epoxy glass PWB at T
A
= +85 ˚C
Operating Temperature
Storage Temperature
T
opt
T
stg
–40 to +85
–55 to +150
˚C
˚C
CONDITION
RATINGS
2.2
280
UNIT
V
mW
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply Voltage
Operating Temperature
Operating Frequency
SYMBOL
V
CC
T
opt
f
opt
MIN.
0.9
–40
150
TYP.
1.0
+25
MAX.
2.0
+85
330
UNIT
V
˚C
MHz
Electric characteristic (T
A
= +25 ˚C, V
CC
= 1.0 V, Z
S
= Z
L
= 50
Ω
)
PARAMETER
Circuit Current
Power Gain
Output 3rd order
intercept point
SYMBOL
I
CC
G
P
OIP
3
TEST CONDITIONS
MIN.
No input signal, TEST CIRCUIT 1
f = 280 MHz, TEST CIRCUIT 3
f
1
= 150.000 MHz, f
2
= 150.025 MHz
TEST CIRCUIT 2
0.30
10.0
—
µ
PC8102T
TYP.
0.5
13.5
–5
MAX.
0.65
16.5
—
UNIT
mA
dB
dBm
Note
External matching circuits should be attached to input and output pins.
Standared characteristics for reference (Sample: I
CC
= 0.55 mA, Condition: T
A
= +25 ˚C, V
CC
= 1.0 V)
PARAMETER
matched with 50
Ω
Power Gain 1
Noise Figure 1
Power Gain 2
Noise Figure 2
Power Gain 3
Noise Figure 3
matched to optimize NF
Power Gain 4
Noise Figure 4
Power Gain 5
Noise Figure 5
Power Gain 6
Noise Figure 6
G
P
4
NF4
G
P
5
NF5
G
P
6
NF6
f = 330 MHz, TEST CIRCUIT 6
f = 280 MHz, TEST CIRCUIT 4
f = 150 MHz, TEST CIRCUIT 2
19.4
2.3
14.0
2.9
11.6
3.1
dB
dB
dB
dB
dB
dB
G
P
1
NF1
G
P
2
NF2
G
P
3
NF3
f = 330 MHz, TEST CIRCUIT 5
f = 280 MHz, TEST CIRCUIT 3
f = 150 MHz, TEST CIRCUIT 2
20.6
3.6
14.7
4.0
14.5
4.1
dB
dB
dB
dB
dB
dB
SYMBOL
CONDITIONS
Reference value
UNIT
4
µ
PC8102T
TEST CIRCUIT 1
1
2
3
IN
GND
OUT
C2
6
C1
5
V
CC
4
A
5
模拟电子
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